B-48
01/99
IFN6449, IFN6450
N-Channel Silicon Junction Field-Effect Transistor
High Voltage
Absolute maximum ratings at T
A
= 25C
IFN6449
IFN6450
Reverse Gate Source Voltage
100 V
100 V
Reverse Gate Drain Voltage
300 V
200 V
Continuous Forward Gate Current
10 mA
10 mA
Continuous Device Power Dissipation
800 mW
800 mW
Power Derating
6.4 mW/C 6.4 mW/C
TO39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25C free air temperature:
IFN6449
IFN6450
Process NJ42
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Drain Breakdown Voltage
V
(BR)GDO
300
200
V
I
G
= 10 A, I
S
= A
Gate Source Breakdown Voltage
V
(BR)GSO
100
100
V
I
G
= 10 A, I
D
= A
Gate Reverse Current
I
GSS
100
nA
V
GS
= 80V, V
DS
= V
100
A
V
GS
= 80V, V
DS
= V
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
2
15
2
15
V
V
DS
= 30V, I
D
= 4 nA
Drain Saturation Current (Pulsed)
I
DSS
2
10
2
10
mA
V
DS
= 30V, V
GS
= V
Dynamic Electrical Characteristics
Common Source Forward
| Y
fs
|
0.5
3
0.5
3
mS
V
DS
= 30V, V
GS
= V
f = 1 kHz
Transfer Transmittance
Common Source Output Conductance
g
os
100
100
S
V
DS
= 30V, V
GS
= V
f = 1 kHz
Common Source Input Capacitance
C
iss
10
10
pF
V
DS
= 30V, V
GS
= V
f = 1 MHz
Common Source
C
rss
5
5
pF
V
DS
= 30V, V
GS
= V
f = 1 MHz
Reverse Transfer Capacitance
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-48
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