01/99
B-65
U290, U291
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
30 V
Continuous Forward Gate Current
100 mA
Continuous Device Power Dissipation
500 mW
Power Derating
4 mW/C
TO52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25C free air temperature:
U290
U291
Process NJ1800D
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
30
30
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
1
1
nA
V
GS
= 15V, V
DS
= A
1
1
A
V
GS
= 15V, V
DS
= A
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
4
10
1.5
4.5
V
V
DS
= 15V, I
D
= 3 nA
Drain Saturation Current (Pulsed)
I
DSS
500
200
mA
V
DS
= 10V, V
GS
= V
Drain Cutoff Current
I
D(OFF)
1
1
nA
V
DS
= 5V, V
GS
= 10V
1
1
A
V
DS
= 5V, V
GS
= 10V
T
A
= 150C
Drain Source ON Voltage
V
DS(ON)
30
70
mV
V
GS
= V, I
D
= 10 mA
Static Drain Source ON Resistance
r
DS(ON)
1
3
2
7
V
GS
= V, I
D
= 10 mA
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
1
3
2
7
V
GS
= V, I
D
=
f = 1 kHz
Drain Gate OFF Capacitance
C
dgo
30
30
pF
V
DG
= 15V, I
S
= V
f = 1 MHz
Source Gate OFF Capacitance
C
sgo
30
30
pF
V
DG
= 15V, I
S
= V
f = 1 MHz
Source Gate Plus Drain Gate
C
iss
160
160
pF
V
DG
= V, V
GS
= V
f = 1 MHz
Switching Characteristics
V
DD
= 1.5V, I
D(ON)
= 30 mA
Turn ON Delay Time
td
(on)
15
15
ns
R
L
= 50
Rise Time
t
r
20
20
ns
V
GS(ON)
= V
Turn OFF Delay Time
td
(off)
15
15
ns
(U290)
V
GS(OFF)
= 12 V
Fall Time
t
f
20
20
ns
(U291)
V
GS(OFF)
= 7V
Choppers
Low On Resistance Switches
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-65
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