C-10
01/99
VCR11N
N-Channel Silicon Voltage Controlled Resistor JFET
Small Signal Attenuators
Filters
Amplifier Gain Control
Oscillator Amplitude Control
Absolute maximum ratings at T
A
= 25C.
Reverse Gate Source & Reverse Gate Drain Voltage
15 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2.4 mW/C
TO71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source , 2 Drain 1, 3 Gate 1,
5 Source 2, 6 Drain 2, 7 Gate 2
At 25C free air temperature:
VCR11N
Process NJ26
Static Electrical Characteristics
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
25
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
0.2
nA
V
GS
= 15V, V
DS
= V
Gate Source Cutoff Voltage
V
GS(OFF)
8
12
V
I
D
= 1 A, V
DS
= 10V
Static Drain Source ON Resistance Ratio
r
DS(MIN)
.95
1
V
DS
= 100 mV, r
DS1
= 200
r
DS(MAX)
.95
1
V
GS1
= V
GS2
, r
DS1
= 2 k
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
70
200
V
GS
= V, I
D
= A
f = 1 kHz
Drain Gate Capacitance
C
dg
7.5
pF
V
DG
= 10V, I
S
= A
f = 1 MHz
Source Gate Capacitance
C
sg
7.5
pF
V
GS
= 10V, I
D
= A
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page C-10
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