C-8
01/99
VCR2N, VCR4N, VCR7N
N-Channel Silicon Voltage Controlled Resistor JFET
Small Signal Attenuators
Filters
Amplifier Gain Control
Oscillator Amplitude Control
Absolute maximum ratings at T
A
= 25C.
Reverse Gate Source & Reverse Gate Drain Voltage
15 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2.4 mW/C
VCR2N & VCR4N
TO18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
VCR7N
TO72 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
VCR2N
VCR4N
At 25C free air temperature:
NJ72
NJ16
Process
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
15
15
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
5
0.2
nA
V
GS
= 15V, V
DS
= V
Gate Source Cutoff Voltage
V
GS(OFF)
1
3.5
3.5
7
V
I
D
= 1 A, V
DS
= 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
20
60
200
600
V
GS
= V, I
D
= A
f = 1 kHz
Drain Gate Capacitance
C
dg
7.5
3
pF
V
DG
= 10V, I
S
= A
f = 1 MHz
Source Gate Capacitance
C
sg
7.5
3
pF
V
DG
= 10V, I
D
= A
f = 1 MHz
VCR7N
At 25C free air temperature:
NJ01
Process
Static Electrical Characteristics
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
15
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
0.1
nA
V
GS
= 15V, V
DS
= V
Gate Source Cutoff Voltage
V
GS(OFF)
2.5
5
V
I
D
= 1 A, V
DS
= 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
4000
8000
V
GS
= V, I
D
= A
f = 1 kHz
Drain Gate Capacitance
C
dg
1.5
pF
V
DG
= 10V, I
S
= A
f = 1 MHz
Source Gate Capacitance
C
sg
1.5
pF
V
DG
= 10V, I
D
= A
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 11:33 AM Page C-8
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