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FN4780.3
IS-1009RH
Radiation Hardened 2.5V Reference
The Star*Power Radiation Hardened IS-1009RH is a 2.5V
shunt regulator diode designed to provide a stable 2.5V
reference over a wide current range.
The device is designed to maintain stability over the full
miitary temperature range and over time. The 0.2%
reference tolerance is achieved by on-chip trimming.
An adjustment terminal is provided to allow for the calibration
of system errors. The use of this terminal to adjust the
reference voltage does not effect the temperature coefficient.
Constructed with the Intersil dielectrically isolated EBHF
process, these devices are immune to Single Event Latch-up
and have been specifically designed to provide highly
reliable performance in harsh radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-00523.
Pinouts
IS2-1009RH (TO-206AB CAN)
BOTTOM VIEW
ISYE-1009RH (SMD.5)
BOTTOM VIEW
Features
Electrically Screened to SMD # 5962-00523
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment
- Total Dose. . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)
- Latch-up Immune . . . . . . . . . . . . . Dielectrically Isolated
Reverse Breakdown Voltage (V
Z
) . . . . . . . . . . . . . . . 2.5V
Change in V
Z
vs. Current (400
A to 10mA). . . . . . . . 6mV
Change in V
Z
vs. Temp (-55
o
C to 125
o
C) . . . . . . . . 15mV
Max Reverse Breakdown Current . . . . . . . . . . . . . . 20mA
Interchangeable with 1009 and 136 Industry Types
Applications
Power Supply Monitoring
Reference for 5V Systems
A/D and D/A Reference
2
1
3 V-
V+
ADJ
1
2
3
ADJ
V-
V+
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(
o
C)
5962F0052301VXC
IS2-1009RH-Q
-55 to 125
5962F0052301QXC
IS2-1009RH-8
-55 to 125
5962F0052301VYC
ISYE-1009RH-Q
-55 to 125
5962F0052301QYC
ISYE-1009RH-8
-55 to 125
IS2-1009RH/Proto
IS2-1009RH/Proto
-55 to 125
ISYE-1009RH/Proto
ISYE-1009RH/Proto
-55 to 125
Data Sheet
September 13, 2005
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2000, 2005.
Star*PowerTM is a trademark of Intersil Corporation.
All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
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All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN4780.3
September 13, 2005
Die Characteristics
DIE DIMENSIONS
1270
m x 1778
m (50 mils x 70 mils)
Thickness: 483
m
25.4
m (19 mils
1 mil)
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
)
Nitride Thickness: 4.0k
1.0k
Silox Thickness: 12.0k
4.0k
Top Metallization
Type: AlSiCu
Thickness: 16.0k
2k
Substrate
EBHF, Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<1.0 x 10
5
A/cm
2
Transistor Count
26
Metallization Mask Layout
IS-1009RH
ADJ
V-
V+
IS-1009RH
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