1
FN9000.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright Intersil Americas Inc. 2002. All Rights Reserved. Star*PowerTM is a trademark of Intersil Americas Inc.
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IS-139ASRH
Single Event Radiation Hardened Quad
Voltage Comparator
The single event effects and total
dose radiation hardened
IS-139ASRH consists of four
independent single or dual supply
voltage comparators on a single monolithic substrate. The
common mode input voltage range includes ground, even
when operated from a single supply, and the low supply
current makes these comparators suitable for low power
applications. These types were designed to directly interface
with TTL and CMOS inputs.
The IS-139ASRH is fabricated on our dielectrically isolated
Rad Hard Silicon Gate (RSG) process, which provides
immunity to single event latch-up and the capability of highly
reliable performance in any radiation environment.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the IS-139ASRH
are contained in SMD 5962-01510. A "hot-link" is
provided on the Intersil website for downloading.
Pinout
IS9-139ASRH (FLATPACK CDFP4-F20)
TOP VIEW
Features
Electrically Screened to SMD # 5962-01510
QML Qualified per MIL-PRF-38535 Requirements
Radiation Hardness
- Total Dose . . . . . . . . . . . . . . . . . . . . 300krad(Si) (Max)
- Single Event Latch-up . . . . . . . . . . . . >84MeV/mg/cm
2
- Single Event Upset . . . . . . . . . . . . . . . >84MeV/mg/cm
2
Operating Supply Voltage Range. . . . . . . . . . . . 9V to 30V
Input Offset Voltage (V
IO
) . . . . . . . . . . . . . . . . 5mV (Max)
Quiescent Supply Current . . . . . . . . . . . . . . . . 3mA (Max)
Differential Input Voltage Range Equal to the Supply
Voltage
100V Output Voltage Withstand Capability
Applications
DC-DC Power Conversion
Pulse Generators
Timing Circuitry
Level Shifting
Analog to Digital Conversion
TM
2
3
4
5
6
7
8
1
20
19
18
17
16
15
14
13
NC
OUTB
NC
OUTA
NC
NC
VCC
-INA
9
10
12
11
+INA
-INB
OUTC
OUTD
NC
GND
NC
+IND
-IND
+INC
-INC
+INB
Ordering Information
ORDERING
NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE (
o
C)
5962F0151001VXC
IS9-139ASRH-Q
-55 to 125
5962F0151001QXC IS9-139ASRH-8
-55 to 125
IS9-139ASRH/Proto IS9-139ASRH/Proto
-55 to 125
Data Sheet
December 2002
2
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Die Characteristics
DIE DIMENSIONS
3750
m x 4510
m (148 mils x 178 mils)
483
m
25.4
m (19 mils
1 mil)
INTERFACE MATERIALS
Glassivation
Type: Silox (SiO
2
)
Thickness: 8.0k
1.0k
Top Metallization
Type: AlSiCu
Thickness: 16.0k
2k
Substrate
Radiation Hardened Silicon Gate, Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<2.0 x 10
5
A/cm
2
Transistor Count
644
Metallization Mask Layout
IS-139ASRH
OUTA
OUTB
VCC
-INA
+INA
-INB
+INB
-INC
+INC
-IND
+IND
GND
OUTD
OUTC
IS-139ASRH
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