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Электронный компонент: 5962F9666302QXC

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1
TM
File Number
4898
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
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Intersil and Design is a trademark of Intersil Corporation.
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Copyright Intersil Corporation 2000
HS-26CLV31RH
Radiation Hardened 3.3V Quad Differential
Line Driver
The Intersil HS-26CLV31RH is a radiation hardened 3.3V
quad differential line driver designed for digital data
transmission over balanced lines, in low voltage, RS-422
protocol applications. CMOS processing assures low power
consumption, high speed, and reliable operation in the most
severe radiation environments.
The HS-26CLV31RH accepts CMOS level inputs and converts
them to differential outputs. Enable pins allow several devices
to be connected to the same data source and addressed
independently. The device has unique outputs that become
high impedance when the driver is disabled or powered-down,
maintaining signal integrity in multi-driver applications.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96663. A "hot-link" is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.htm
Logic Diagram
Features
Electrically Screened to SMD # 5962-96663
QML Qualified per MIL-PRF-38535 Requirements
1.2 Micron Radiation Hardened CMOS
- Total Dose . . . . . . . . . . . . . . . . . . . . . 300 krad(Si)(Max)
- Single Event Upset LET . . . . . . . . . . .100MeV/mg/cm
2
)
- Single Event Latch-up Immune
Extremely Low Stand-by Current . . . . . . . . . 100
A (Max)
Operating Supply Range . . . . . . . . . . . . . . . . 3.0V to 3.6V
CMOS Level Inputs . . . . V
IH
> (.7)(V
DD
); V
IL
< (.3)(V
DD
)
Differential Outputs. . . . . . . . . . . V
OH
> 1.8V; V
OL
< 0.5V
High Impedance Outputs when Disabled or Powered
Down
Low Output Impedance . . . . . . . . . . . . . . . . . 10
or Less
Full -55
o
C to 125
o
C Military Temperature Range
Pinouts
HS1-26CLV31RH (SBDIP)
CDIP2-T16
TOP VIEW
HS9-26CLV31RH (FLATPACK)
CDFP4-F16
TOP VIEW
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP.
RANGE
(
o
C)
5962F9666302QEC
HS1-26CLV31RH-8
-55 to 125
5962F9666302QXC
HS9-26CLV31RH-8
-55 to 125
5962F9666302V9A
HS0-26CLV31RH-Q
25
5962F9666302VEC
HS1-26CLV31RH-Q
-55 to 125
5962F9666302VXC
HS9-26CLV31RH-Q
-55 to 125
HS1-26CLV31RH/PROTO HS1-26CLV31RH/PROTO
-55 to 125
HS9-26CLV31RH/PROTO HS9-26CLV31RH/PROTO
-55 to 125
ENABLE
ENABLE
AIN
AO
BIN
BO
CIN
CO
DIN
DO DO
CO
BO
AO
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
AIN
AO
AO
ENABLE
BO
BO
GND
BIN
V
DD
DO
DO
ENABLE
CO
CO
CIN
DIN
AIN
AO
AO
ENABLE
BO
BO
BIN
GND
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
V
DD
DIN
DO
DO
ENABLE
CO
CO
CIN
Data Sheet
August 2000
2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Die Characteristics
DIE DIMENSIONS:
96.5 mils x 195 mils x 21 mils
(2450 x 4950)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 8k
1k
Metallization:
Bottom: Mo/TiW
Thickness: 5800
1k
Top: AlSiCu (Top)
Thickness: 10k
1k
Substrate:
AVLSI1RA
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
V
DD
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Bond Pad Size:
110
m x 100
m
Metallization Mask Layout
HS-26CLV31RH
(14) DO
(13) DO
(12) ENABLE
(11) CO
(10) CO
AO (2)
AO (3)
ENABLE (4)
BO (5)
BO (6)
BIN
(7)
ND
(8)
CIN
(9)
ND
(8)
(1)
AIN
(16)
V
DD
(15)
DIN
(16)
V
DD
HS-26CLV31RH