1
File Number
4761
ACS147MS
Radiation Hardened 10-to-4 Line Priority
Encoder
These nine-input priority encoders accept data from nine
active LOW inputs and provide a binary representation on
the four active LOW outputs. A priority is assigned to each
input so that when two or more inputs are simultaneously
active, the input with the highest priority is represented on
the output. Input line I9 has the highest priority.
These devices provide the 10-to-4-line priority encoding
function by use of the implied decimal "zero". The "zero" is
encoded when all nine data inputs are HIGH, forcing all four
outputs HIGH.
The ACS147MS is fabricated on a CMOS Silicon on
Sapphire (SOS) process, which provides an immunity to
Single Event Latch-up and the capability of highly reliable
performance in any radiation environment.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS147MS are
contained in SMD 5962-98633. A "hot-link" is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/spaceselect.htm
Features
QML Qualified Per MIL-PRF-38535 Requirements
1.25 Micron Radiation Hardened SOS CMOS
Radiation Environment
- Latch-Up Free Under Any Conditions
- Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEU Immunity . . . . . . . . . . . . . <1 x 10
-10
Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm
2
)
Input Logic Levels. . . . V
IL
= (0.3)(V
CC
), V
IH
= (0.7)(V
CC
)
Output Current
. . . . . . . . . . . . . . . . . . . . . . . . . .
12mA (Min)
Quiescent Supply Current . . . . . . . . . . . . . . . 20
A (Max)
Propagation Delay . . . . . . . . . . . . . . . . . . . . . . 17ns (Max)
Applications
High Speed Control Circuits
Sensor Monitoring
Low Power Designs
Ordering Information
ORDERING NUMBER
INTERNAL MARKETING
NUMBER
TEMP. RANGE (
o
C)
PACKAGE
DESIGNATOR
5962F9863301VCC
ACS147DMSR-03
-55 to 125
16 Ld SBDIP
CDIP2-T16
ACS147D/SAMPLE-03
ACS147D/SAMPLE-03
25
16 Ld SBDIP
CDIP2-T16
5962F9863301VXC
ACS147KMSR-03
-55 to 125
16 Ld Flatpack
CDFP4-F16
ACS147K/SAMPLE-03
ACS147K/SAMPLE-03
25
16 Ld Flatpack
CDFP4-F16
5962F9863301V9A
ACS147HMSR-03
25
Die
NA
Pinouts
ACS147MS
(SBDIP)
TOP VIEW
ACS147MS
(FLATPACK)
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
I4
I5
I6
I7
I8
Y2
GND
Y1
V
CC
Y3
I3
I2
I1
I9
Y0
NC
I4
I5
I6
I7
I8
Y2
Y1
GND
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
V
CC
NC
Y3
I3
I2
I1
I9
Y0
Data Sheet
July 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Die Characteristics
DIE DIMENSIONS:
Size: 2390
m x 2390
m (94 mils x 94 mils)
Thickness: 525
m
25
m (20.6 mils
1 mil)
Bond Pad: 110
m x 110
m (4.3 x 4.3 mils)
METALLIZATION: AI
Metal 1 Thickness: 0.7
m
0.1
m
Metal 2 Thickness: 1.0
m
0.1
m
SUBSTRATE POTENTIAL
Unbiased Insulator
PASSIVATION:
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30
m
0.15
m
SPECIAL INSTRUCTIONS
Bond V
CC
First
ADDITIONAL INFORMATION:
Worst Case Current Density: <2.0 x 10
5
A/cm
2
Transistor Count: 233
Metallization Mask Layout
ACS147MS
I5
I4
V
CC
I6 (3)
I7 (4)
I8 (5)
Y2 (6)
(14) Y3
(13) I3
(12) I2
(11) I1
(7)
(8)
(9)
(10)
(2)
(1)
(16)
NC
I9
Y0
GND
Y1
ACS147MS
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