1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
Satellite Applications FlowTM (SAF) is a trademark of Intersil Corporation.
HS-26CT31RH-T
Radiation Hardened
Quad Differential Line Driver
Intersil's Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil HS-26CT31RH-T is a Quad Differential Line Driver
designed for digital data transmission over balanced lines and
meets the requirements of EIA Standard RS-422. Radiation
Hardened CMOS processing assures low power consumption,
high speed, and reliable operation in the most severe radiation
environments.
The HS-26CT31RH-T accepts TTL inputs and converts them to
RS-422 compatible outputs. This circuit uses special outputs
that enable the drivers to power down without loading down the
bus. Enable and disable pins allow several devices to be
connected to the same data source and addressed
independently.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-26CT31RH-T
are contained in SMD 5962-95632. A "hot-link" is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil's Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Features
QML Class T, Per MIL-PRF-38535
Radiation Performance
- Gamma Dose . . . . . . . . . . . . . . . . . . . . 1 x 10
5
RAD(Si)
- SEU and SEL . . . . . . . . . . Immune to 100MeV/mg/cm
2
EIA RS-422 Compatible Outputs (Except for IOS)
TTL Compatible Inputs
High Impedance Outputs when Disabled or Powered
Down
Low Power Dissipation 2.75mW Standby (Max)
Single 5V Supply
Low Output Impedance 10
or Less
Full -55
o
C to 125
o
C Military Temperature Range
Pinouts
HS1-26CT31RH-T (SBDIP), CDIP2-T16
TOP VIEW
HS9-26CT31RH-T (FLATPACK), CDFP4-F16
TOP VIEW
Ordering Information
ORDERING
NUMBER
PART
NUMBER
TEMP.
RANGE
(
o
C)
5962R9563201TEC
HS1-26CT31RH-T
-55 to 125
HS1-26C31RH/Proto
HS1-26C31RH/Proto
-55 to 125
5962R9563201TXC
HS9-26C31RH-T
-55 to 125
HS9-26C31RH/Proto
HS9-26C31RH/Proto
-55 to 125
NOTE:
Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
AIN
AO
AO
ENABLE
BO
BO
GND
BIN
V
DD
DO
DO
ENABLE
CO
CO
CIN
DIN
AIN
AO
AO
ENABLE
BO
BO
BIN
GND
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
V
DD
DIN
DO
DO
ENABLE
CO
CO
CIN
Data Sheet
July 1999
File Number
4590.1
3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
2450
m x 4950
m x 533
m
25.4
m
(97 x 195 x 21mils
1mil)
METALLIZATION:
M1: Mo/Tiw
Thickness: 5800
M2: Al/Si/Cu
Thickness: 10k
1k
SUBSTRATE POTENTIAL:
Internally connected to V
DD.
May be left floating.
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: SiO
2
Thickness: 8k
1k
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
285
PROCESS:
Radiation Hardened CMOS, AVLSI
Metallization Mask Layout
HS-26CT31RH
(14) DO
(13) DO
(12) ENABLE
(11) CO
(10) CO
AO (2)
AO (3)
ENABLE (4)
BO (5)
BO (6)
BIN
(7)
GND
(8)
CIN
(9)
GND
(8)
(1)
AIN
(16)
V
DD
(15)
DIN
(16)
V
DD
HS-26CT31RH-T
PDF 
ZIP