7-18
November 1996
CA3039
Diode Array
File Number
343.3
Features
Six Matched Diodes on a Common Substrate
Excellent Reverse Recovery Time . . . . . . . . . 1ns (Typ)
V
F
Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mV (Max)
Low Capacitance . . . . . . C
D
= 0.65pF (Typ) at V
R
= -2V
Applications
Ultra-Fast Low Capacitance Matched Diodes for
Applications in Communications and Switching
Systems
Balanced Modulators or Demodulators
Ring Modulators
High Speed Diode Gates
Analog Switches
Description
The CA3039 consists of six ultra-fast, low capacitance
diodes on a common monolithic substrate. Integrated circuit
construction assures excellent static and dynamic matching
of the diodes, making the array extremely useful for a wide
variety of applications in communication and switching
systems.
Five of the diodes are independently accessible, the sixth
shares a common terminal with the substrate.
For applications such as balanced modulators or ring
modulators where capacitive balance is important, the
substrate should be returned to a DC potential which is
significantly more negative (with respect to the active diodes)
than the peak signal applied.
Pinouts
Ordering Information
PART NUMBER
TEMP.
RANGE (
o
C)
PACKAGE
PKG.
NO.
CA3039
-55 to 125
12 Pin Metal Can
T12.B
CA3039M
-55 to 125
14 Ld SOIC
M14.15
CA3039M96
-55 to 125
14 Ld SOIC Tape
and Reel
M14.15
CA3039
(SOIC)
TOP VIEW
CA3039
(METAL CAN)
TOP VIEW
NC
SUBSTRATE
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
D
5
D
2
D
6
D
S
D
4
D
3
D
1
12
9
11
10
8
7
6
5
4
3
2
1
D
5
D
4
D
3
D
2
D
1
D
6
D
S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 1999
7-19
Absolute Maximum Ratings
Thermal Information
Inverse Voltage (PIV) for: D
1
- D
5
. . . . . . . . . . . . . . . . . . . . . . . . 5V
D
6
. . . . . . . . . . . . . . . . . . . . . . . 0.5V
Diode-to-Substrate Voltage (V
DI
) for D
1
- D
5
. . . . . . . . . . . . 20V, -1V
(Terminal 1, 4, 5, 8 or 12 to Terminal 10)
DC Forward Current (I
F
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Recurrent Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . 100mA
Forward Surge Current (IF
(SURGE)
). . . . . . . . . . . . . . . . . . . . 100mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Thermal Resistance (Typical, Note 1)
JA
(
o
C/W)
JC
(
o
C/W)
Metal Can Package . . . . . . . . . . . . . . .
200
120
SOIC Package . . . . . . . . . . . . . . . . . . .
220
N/A
Maximum Power Dissipation (Any One Diode) . . . . . . . . . . . 100mW
Maximum Junction Temperature (Metal Can Package) . . . . . . . 175
o
C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150
o
C
Maximum Storage Temperature Range . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T
A
= 25
o
C; Characteristics apply for each diode unit, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC Forward Voltage Drop (Figure 1)
V
F
I
F
= 50
A
-
0.65
0.69
V
I
F
= 1mA
-
0.73
0.78
V
I
F
= 3mA
-
0.76
0.80
V
I
F
= 10mA
-
0.81
0.90
V
DC Reverse Breakdown Voltage
V
(BR)R
I
R
= -10
A
5
7
-
V
DC Reverse Breakdown Voltage Between Any
Diode Unit and Substrate
V
(BR)R
I
R
= -10
A
20
-
-
V
DC Reverse (Leakage) Current (Figure 2)
I
R
V
R
= -4V
-
0.016
100
nA
DC Reverse (Leakage) Current Between Any
Diode Unit and Substrate (Figure 3)
I
R
V
R
= -10V
-
0.022
100
nA
Magnitude of Diode Offset Voltage (Note 2)
(Figure 1)
I
F
= 1mA
-
0.5
5.0
mV
Temperature Coefficient of |V
F1
- V
F2
| (Figure 4)
I
F
= 1mA
-
1.0
-
V/
o
C
Temperature Coefficient of Forward Drop
(Figure 5)
I
F
= 1mA
-
-1.9
-
mV/
o
C
DC Forward Voltage Drop for Anode-to-
Substrate Diode (D
S
)
V
F
I
F
= 1mA
-
0.65
-
V
Reverse Recovery Time
tRR
I
F
= 10mA, I
R
= -10mA
-
1.0
-
ns
Diode Resistance (Figure 6)
R
D
f = 1kHz, I
F
= 1mA
25
30
45
Diode Capacitance (Figure 7)
C
D
V
R
= -2V, I
F
= 0
-
0.65
-
pF
Diode-to-Substrate Capacitance (Figure 8)
C
DI
V
DI
= 4V, I
F
= 0
-
3.2
-
pF
NOTE:
2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units.
V
F1
V
F2
V
F1
V
F2
T
----------------------------------
V
F
T
-----------
CA3039
7-20
Typical Performance Curves
FIGURE 1. DC FORWARD VOLTAGE DROP (ANY DIODE) AND
DIODE OFFSET VOLTAGE vs DC FORWARD
CURRENT
FIGURE 2. DC REVERSE (LEAKAGE) CURRENT (D
1
- D
5
) vs
TEMPERATURE
FIGURE 3. DC REVERSE (LEAKAGE) CURRENT BETWEEN D
1
,
D
2
, D
3
, D
4
, D
5
AND SUBSTRATE vs TEMPERATURE
FIGURE 4. DIODE OFFSET VOLTAGE (ANY DIODE) vs
TEMPERATURE
FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE) vs
TEMPERATURE
FIGURE 6. DIODE RESISTANCE (ANY DIODE) vs DC
FORWARD CURRENT
DC FOR
W
ARD V
O
L
T
A
GE (V)
DC FORWARD CURRENT (mA)
0.5
0.01
0.1
1
10
DIODE OFFSET V
O
L
T
A
GE (mV)
0
1
2
3
4
5
6
0.8
0.7
0.6
FORWARD VOLTAGE DROP (V
F
)
DIODE OFFSET
V
F1
V
F2
(
)
T
A
= 25
o
C
DC REVERSE CURRENT (nA)
10
1
0.1
0.001
-75
0.01
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
V
R
= -4V
DC REVERSE CURRENT (nA)
10
1
0.1
0.001
-75
0.01
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
100
V
R
= -10V
DIODE OFFSET V
O
L
T
A
G
E
V
F1
V
F2
()
(mV)
-75
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
0.3
0.4
0.5
0.6
0.7
2
3
4
I
F
= 10mA
I
F
= 1mA
I
F
= 0.1mA
DC FOR
W
ARD V
O
L
T
A
GE (V)
-75
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
0.4
0.5
0.6
0.7
0.8
0.9
I
F
= 1mA
DC FORWARD CURRENT (mA)
DIODE RESIST
ANCE (
)
1000
100
10
1
0.01
0.1
1
10
T
A
= 25
o
C
f = 1kHz
CA3039
7-21
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
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7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FIGURE 7. DIODE CAPACITANCE (D
1
- D
5
) vs REVERSE
VOLTAGE
FIGURE 8. DIODE-TO-SUBSTRATE CAPACITANCE vs
REVERSE VOLTAGE
Typical Performance Curves
(Continued)
DIODE CAP
A
CIT
ANCE (pF)
DC REVERSE VOLTAGE ACROSS DIODE (V)
6
5
4
3
2
1
0
1
2
3
4
T
A
= 25
o
C
I
F
= 0
DIODE T
O
SUBSTRA
TE CAP
A
CIT
ANCE (pF)
DC REVERSE VOLTAGE BETWEEN TERMINALS 1, 4, 5, 8, OR 12
6
5
4
3
2
1
0
1
2
3
4
AND SUBSTRATE (TERMINAL 10) (V)
T
A
= 25
o
C
I
F
= 0
0
CA3039
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