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Электронный компонент: CD40108

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7-25
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
CD40108BMS
CMOS 4 x 4 Multiport Register
Description
The CD40108BMS is a 4 x 4 multiport register containing
four 4-bit registers, write address decoder, two separate
read address decoders, and two 3-state output buses.
When the ENABLE input is low, the corresponding output
bus is switched, independently of the clock, to a high-imped-
ance state. The high-impedance third state provides the out-
puts with the capability of being connected to the bus lines in
a bus-organized system without the need for interface or
pull-up components.
When the WRITE ENABLE input is high, all data input lines
are latched on the positive transition of the CLOCK and the
data is entered into the word selected by the write address
lines. When WRITE ENABLE is low, the CLOCK is inhibited
and no new data is entered. In either case, the contents of
any word may be accessed via the read address lines inde-
pendent of the state of the CLOCK input.
The CD40108BMS is supplied in these 24-lead outline pack-
ages:
Applications
Scratch-Pad Memories
Arithmetic Units
Data Storage
Braze Seal DIP
H4V
Ceramic Flatpack
H4P
Features
High Voltage Type (20V Rating)
Four 4-Bit Registers
One Input and Two Output Buses
Unlimited Expansion in Bit and Word Directions
Data Lines have latched Inputs
3-State Outputs
Separate Control of Each Bus, Allowing Simultaneous
Independent Reading of Any of Four Registers on Bus
A and Bus B and Independent Writing Into Any of the
Four Registers
CD40108BMS is Pin-Compatible with Industry Type
MC14580
Standardized Symmetrical Output Characteristics
100% Tested for Quiescent Current at 20V
Maximum Input Current of 1
A at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
5V, 10V and 15V Parametric Ratings
Meets All Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specifications for Description of
`B' Series CMOS Devices"
December 1992
File Number
3356
Pinout
CD40108BMS
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
Q3 B
Q2 B
3-STATE A
Q0 A
Q1 A
Q2 A
Q3 A
WRITE 0
WRITE 1
READ 1B
READ 0B
VSS
16
17
18
19
20
21
22
23
24
15
14
13
VDD
Q0 B
3-STATE B
D0
D1
D3
WRITE ENABLE
READ 1A
READ 0A
Q1 B
D2
CLOCK
Functional Diagram
20
19
18
17
8
9
14
13
10
11
D0
D1
D2
D3
WRITE 0
WRITE 1
READ 1A
READ 0A
READ 1B
23
22
7
6
5
4
2
1
Q0
Q2
Q3
Q1
READ 0B
Q0
Q2
Q3
Q1
3-STATE A
3
15
WRITE
ENABLE
21
16
CLOCK
3-STATE B
VDD = 24
VSS = 12
DATA
INPUTS
WORD A
OUTPUT
WORD B
OUTPUT
7-26
Specifications CD40108BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
1/32 Inch (1.59mm
0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For T
A
= -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For T
A
= +100
o
C to +125
o
C (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For T
A
= Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
10
A
2
+125
o
C
-
1000
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
10
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C 14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25
o
C
0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25
o
C
1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25
o
C
3.5
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25
o
C
-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25
o
C
-
-1.8
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25
o
C
-
-1.4
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25
o
C
-
-3.5
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A
1
+25
o
C
0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
1.5
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
3.5
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
4
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
11
-
V
Tri-State Output
Leakage
IOZL
VIN = VDD or GND
VOUT = 0V
VDD = 20V
1
+25
o
C
-0.4
-
A
2
+125
o
C
-12
-
A
VDD = 18V
3
-55
o
C
-0.4
-
A
Tri-State Output
Leakage
IOZH
VIN = VDD or GND
VOUT = VDD
VDD = 20V
1
+25
o
C
-
0.4
A
2
+125
o
C
-
12
A
VDD = 18V
3
-55
o
C
-
0.4
A
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-27
Specifications CD40108BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay Clock
or Write Enable to Q
TPHL1
TPLH1
VDD = 5V, VIN = VDD or GND
(Note 1, 2)
9
+25
o
C
-
720
ns
10, 11
+125
o
C, -55
o
C
-
972
ns
Propagation Delay Read
or Write Address to Q
TPHL2
TPLH2
VDD = 5V, VIN = VDD or GND
(Note 1, 2)
9
+25
o
C
-
600
ns
10, 11
+125
o
C, -55
o
C
-
810
ns
Propagation Delay 3-
State Disable Delay Time
TPZH
TPHZ
VDD = 5V, VIN = VDD or GND
(Note 2, 3)
9
+25
o
C
-
200
ns
10, 11
+125
o
C, -55
o
C
-
270
ns
Propagation Delay 3-
State Disable Delay Time
TPZL
TPLZ
VDD = 5V, VIN = VDD or GND
(Note 2, 3)
9
+25
o
C
-
260
ns
10, 11
+125
o
C, -55
o
C
-
351
ns
Transition Time
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
(Note 1, 2)
9
+25
o
C
-
200
ns
10, 11
+125
o
C, -55
o
C
-
270
ns
Maximum Clock Input
Frequency
FCL
VDD = 5V, VIN = VDD or GND
(Note 1, 2)
9
+25
o
C
1.5
-
MHz
10, 11
+125
o
C, -55
o
C
1.11
-
MHz
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
5
A
+125
o
C
-
150
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
10
A
+125
o
C
-
300
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
10
A
+125
o
C
-
600
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
0.36
-
mA
-55
o
C
0.64
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
0.9
-
mA
-55
o
C
1.6
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
2.4
-
mA
-55
o
C
4.2
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-
-0.36
mA
-55
o
C
-
-0.64
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-
-1.15
mA
-55
o
C
-
-2.0
mA
7-28
Specifications CD40108BMS
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-
-0.9
mA
-55
o
C
-
-1.6
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-2.4
mA
-55
o
C
-
-4.2
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
7
-
V
Propagation Delay
Clock or Write Enable to Q
TPLH1
TPHL1
VDD = 10V
1, 2, 3
+25
o
C
-
280
ns
VDD = 15V
1, 2, 3
+25
o
C
-
200
ns
Propagation Delay
Read or Write Address to Q
TPHL2
TPLH2
VDD = 10V
1, 2, 3
+25
o
C
-
240
ns
VDD = 15V
1, 2, 3
+25
o
C
-
170
ns
Propagation Delay
3-State Disable Delay
Time
TPZH
TPHZ
VDD = 10V
1, 2, 4
+25
o
C
-
100
ns
VDD = 15V
1, 2, 4
+25
o
C
-
80
ns
Propagation Delay
3-State Disable Delay
Time
TPZL
TPLZ
VDD = 10V
1, 2, 4
+25
o
C
-
120
ns
VDD = 15V
1, 2, 4
+25
o
C
-
100
ns
Transition Time
TTLH
TTHL
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
80
ns
Maximum Clock Input
Frequency
FCL
VDD = 10V
1, 2, 3
+25
o
C
3.5
-
MHz
VDD = 15V
1, 2, 3
+25
o
C
4.5
-
MHz
Minimum Data Setup
Time
Data to Clock
TS
VDD = 5V
1, 2, 3
+25
o
C
0
ns
VDD = 10V
1, 2, 3
+25
o
C
0
ns
VDD = 15V
1, 2, 3
+25
o
C
0
ns
Minimum Data Setup
Time
Write Enable to Clock
TS
VDD = 5V
1, 2, 3
+25
o
C
250
ns
VDD = 10V
1, 2, 3
+25
o
C
100
ns
VDD = 15V
1, 2, 3
+25
o
C
70
ns
Minimum Data Setup
Time
Write Address to Clock
TS
VDD = 5V
1, 2, 3
+25
o
C
250
ns
VDD = 10V
1, 2, 3
+25
o
C
100
ns
VDD = 15V
1, 2, 3
+25
o
C
70
ns
Clock Rise and Fall Time
TRCL
TFCL
VDD = 5V
1, 2, 3, 5
+25
o
C
-
15
ns
VDD = 10V
1, 2, 3, 5
+25
o
C
-
5
ns
VDD = 15V
1, 2, 3, 5
+25
o
C
-
5
ns
Minimum Hold Time Data
to Clock
TH
VDD = 5V
2, 3
+25
o
C
220
ns
VDD = 10V
2, 3
+25
o
C
100
ns
VDD = 15V
2, 3
+25
o
C
80
ns
Hold Time Write Enable
to Clock
TH
VDD = 5V
2, 3
+25
o
C
-
270
ns
VDD = 10V
2, 3
+25
o
C
-
130
ns
VDD = 15V
2, 3
+25
o
C
-
80
ns
Write Address to Clock
TH
VDD = 5V
2, 3
+25
o
C
-
330
ns
VDD = 10V
2, 3
+25
o
C
-
140
ns
VDD = 15V
2, 3
+25
o
C
-
90
ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
7-29
Specifications CD40108BMS
Minimum Clock Pulse
Width Clock or Write
Enable
TW
VDD = 5V
3
+25
o
C
-
350
ns
VDD = 10V
3
+25
o
C
-
130
ns
VDD = 15V
3
+25
o
C
-
90
ns
Minimum Clock Pulse
Width Write Address
TW
VDD = 5V
3
+25
o
C
-
300
ns
VDD = 10V
3
+25
o
C
-
150
ns
VDD = 15V
3
+25
o
C
-
90
ns
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
5. If more than one unit is cascaded, TRCL should be made less than or equal to the sumof the transition time and the fixed propagation
delay of the output of the driving stage for the estimated capacitive load.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
25
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
-
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
IDD
1.0
A
Output Current (Sink)
IOL5
20% x Pre-Test Reading
Output Current (Source)
IOH5A
20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX