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Электронный компонент: CD4010BMS

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4-1
CD4010BMS
CMOS Hex Buffer/Converter
CD4010BMS Hex Buffer/Converter may be used as CMOS
to TTL or DTL logic-level converter or CMOS high-sink-cur-
rent driver.
The CD4050B is the preferred hex buffer replacement for the
CD4010BMS in all applications except multiplexers.The
CD4010BMS is supplied in these 16 lead outline packages:
Features
Non-Inverting Type
High-Voltage Type (20V Rating)
100% Tested for Quiescent Current at 20V
Maximum Input Current of 1
A at 18V Over Full
Package-Temperature Range;
- 100nA at 18V and +25
o
C
5V, 10V and 15V Parametric Ratings
Applications
CMOS To DTL/TTL Hex Converter
CMOS Current "Sink" or "Source" Driver
CMOS High-to-Low Logic-Level Converter
Multiplexer - 1 to 6 or 6 to 1
Pinout
CD4010BMS
TOP VIEW
Functional Diagram
Braze Seal DIP
H4S
Frit Seal DIP
H1E
Ceramic Flatpack H6W
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
VCC
G = A
A
H = B
B
I = C
VSS
C
VDD
F
NC
K = E
E
J = D
D
L = F
NC = NO CONNECTION
13
NC
VCC
VSS
VDD
1
8
16
A
3
2
G = A
F
14
15
L = F
B
5
4
H = B
C
7
6
I = C
D
9
10
J = D
E
11
12
K = E
NC = NO CONNECTION
November 1994
File Number
3078
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
4-2
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . . .
10mA
Operating Temperature Range . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
1/32 Inch (1.59mm
0.79mm) from case for
10s Maximum
Thermal Resistance. . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . .500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
2
A
2
+125
o
C
-
200
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
2
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25
o
C
3.0
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25
o
C
8.0
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25
o
C
24.0
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25
o
C
-
-0.2
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25
o
C
-
-0.8
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25
o
C
-
-0.45
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25
o
C
-
-1.5
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A
1
+25
o
C
0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
1.5
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
3.5
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
4
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
11
V
NOTES: 1. All voltages referenced to device GND, 100% testing being im-
plemented.
2. Go/No Go test with limits applied to inputs
3. For accuracy, voltage is measured differentially to VDD. Limit is
0.050V max.
CD4010BMS
4-3
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1, 2)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPHL
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
130
ns
10, 11
+125
o
C, -55
o
C
-
175
ns
Propagation Delay
TPLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
200
ns
10, 11
+125
o
C, -55
o
C
-
270
ns
Transition Time
TTHL
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
70
ns
10, 11
+125
o
C, -55
o
C
-
94
ns
Transition Time
TTLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
350
ns
10, 11
+125
o
C, -55
o
C
-
473
ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
1
A
+125
o
C
-
30
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
A
+125
o
C
-
60
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
A
+125
o
C
-
120
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C, -
55
o
C
9.95
-
V
Output Current (Sink)
IOL4
VDD = 4.5V, VOUT = 0.4V
1, 2
+25
o
C
2.6
-
mA
+125
o
C
1.8
-
mA
-55
o
C
3.2
-
mA
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
2.1
-
mA
-55
o
C
3.75
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
5.6
-
mA
-55
o
C
10.0
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
16.0
-
mA
-55
o
C
30.0
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-
-0.15
mA
-55
o
C
-
-0.25
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-
-0.58
mA
-55
o
C
-
-1.0
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-
-0.33
mA
-55
o
C
-
-0.55
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-1.1
mA
-55
o
C
-
-1.65
mA
CD4010BMS
4-4
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C, -
55
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C, -
55
o
C
7
-
V
Propagation Delay
TPHL
VDD = 10V, VCC = 10V
1, 2, 3
+25
o
C
-
70
ns
VDD = 15V, VCC = 15V
1, 2, 3
+25
o
C
-
50
ns
Propagation Delay
TPLH
VDD = 10V, VCC = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V, VCC = 15V
1, 2, 3
+25
o
C
-
70
ns
Propagation Delay
TPHL
VDD = 10V, VCC = 5V
1, 2, 3
+25
o
C
-
70
ns
VDD = 15V, VCC = 5V
1, 2, 3
+25
o
C
-
40
ns
Propagation Delay
TPLH
VDD = 10V, VCC = 5V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V, VCC = 5V
1, 2, 3
+25
o
C
-
70
ns
Transition Time
TTHL
VDD = 10V
1, 2, 3
+25
o
C
-
40
ns
VDD = 15V
1, 2, 3
+25
o
C
-
30
ns
Transition Time
TTLH
VDD = 10V
1, 2, 3
+25
o
C
-
150
ns
VDD = 15V
1, 2, 3
+25
o
C
-
110
ns
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
7.5
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage Delta
VNTH
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-
1
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage Delta
VPTH
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
-
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V, VCC = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
0.2
A
Output Current (Sink)
IOL5
20% x Pre-Test Reading
Output Current (Source)
IOH5A
20% x Pre-Test Reading
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CD4010BMS
4-5
Schematic Diagram
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A, RON
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A, RON
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A, RON
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A, RON
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE:
1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
-0.5V
OSCILLATOR
50kHz
25kHz
Static Burn-In 1 (Note 1) 2, 4, 6, 10, 12, 13, 15 3, 5, 7 - 9, 11, 14
1, 16
Static Burn-In 2 (Note 1) 2, 4, 6, 10, 12, 13, 15
8
1, 3, 5, 7, 9, 11, 14, 16
Dynamic Burn-In (Note 3)
13
8
1, 16
2, 4, 6, 10, 12, 15
3, 5, 7, 9, 11, 14
Irradiation (Note 2)
2, 4, 6, 10, 12, 13, 15
8
1, 3, 5, 7, 9, 11, 14, 16
NOTES:
1. Each pin except VDD and Pin 1 and GND will have a series resistor of 10K
5%, VDD = 18V
0.5V
2. Each pin except VDD and Pin 1 and GND will have a series resistor of 47K
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V
0.5V
3. Each pin except VDD and Pin 1 and GND will have a series resistor of 4.75K
5%, VDD = 18V
0.5V
VSS
VDD
VCC
OUTPUT
P
N
P
N
N
*
INPUT
VDD
GND
VCC
GND
CONFIGURATION:
HEX COS/MOS TO DTL OR TTL
CONVERTER (NON-INVERTING)
WIRING SCHEDULE:
CONNECT VCC TO DTL OR
TTL SUPPLY
CONNECT VDD TO COS/MOS
SUPPLY
VDD
VSS
*
ALL INPUTS ARE PROTECTED
BY CMOS PROTECTION
NETWORK
CD4010BMS