1
CD4049UBMS
CMOS Hex Buffer/Converter
The CD4049UBMS is an inverting hex buffer and features
logic level conversion using only one supply (voltage (VCC).
The input signal high level (VIH) can exceed the VCC supply
voltage when this device is used for logic level conversions.
This device is intended for use as CMOS to DTL/TTL
converters and can drive directly two DTL/TTL loads. (VCC
= 5V, VOL
0.4V, and IOL
3.3mA.
The CD4049UBMS is designated as replacement for
CD4009UB. Because the CD4049UBMS requires only one
power supply, it is preferred over the CD4009UB and
CD4010B and should be used in place of the CD4009UB in
all inverter, current driver, or logic level conversion applica-
tions. In these applications the CD4049UBMS is pin compat-
ible with the CD4009UB, and can be substituted for this
device in existing as well as in new designs. Terminal No. 16
is not connected internally on the CD4049UBMS, therefore,
connection to this terminal is of no consequence to circuit
operation. For applications not requiring high sink current or
voltage conversion, the CD4069UB Hex Inverter is recom-
mended.
The CD4049UBMS is supplied in these 16 lead outline pack-
ages:
Features
High Voltage Type (20V Rating)
Inverting Type
High Sink Current for Driving 2 TTL Loads
High-to-Low Level Logic Conversion
100% Tested for Quiescent Current at 20V
Maximum Input Current of 1
A at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
5V, 10V and 15V Parametric Ratings
Applications
CMOS to DTL/TTL Hex Converter
CMOS Current "Sink" or "Source" Driver
CMOS High-to-Low Logic Level Converter
Pinout
CD4049UBMS
TOP VIEW
Functional Diagram
Schematic
FIGURE 1. SCHEMATIC DIAGRAM, 1 OF 6 IDENTICAL UNITS
Braze Seal DIP
H4S
Frit Seal DIP
H1E
Ceramic Flatpack
H3X
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
VCC
G = A
A
H = B
B
I = C
VSS
C
NC
F
NC
K = E
E
J = D
D
L = F
3
2
A
G = A
5
4
B
H = B
7
6
C
I = C
9
10
D
J = D
11
12
E
K = E
14
15
F
L = F
1
8
VCC
VSS
NC = 13
NC = 16
OUT
VSS
N
P
VCC
R
IN
Data Sheet
December 1992
File Number
3315
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
2
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . . .
10mA
Operating Temperature Range . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
1/32 Inch (1.59mm
0.79mm) from case for
10s Maximum
Thermal Resistance. . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . .500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
2
A
2
+125
o
C
-
200
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
2
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
14.95
-
V
Output Current (Sink)
IOL4
VDD = 4.5V, VOUT = 0.4V
1
+25
o
C
2.6
-
mA
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25
o
C
3.2
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25
o
C
8.0
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25
o
C
24
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25
o
C
-
-0.8
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25
o
C
-
-3.2
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25
o
C
-
-1.8
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25
o
C
-
-6.0
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A
1
+25
o
C
0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
1.0
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
4.0
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
2.5
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
12.5
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being im-
plemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit is
0.050V max.
CD4049UBMS
3
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1, 2)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPHL
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
65
ns
10, 11
+125
o
C, -55
o
C
-
88
ns
Propagation Delay
TPLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
120
ns
10, 11
+125
o
C, -55
o
C
-
162
ns
Transition Time
TTHL
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
60
ns
10, 11
+125
o
C, -55
o
C
-
81
ns
Transition Time
TTLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
160
ns
10, 11
+125
o
C, -55
o
C
-
216
ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
1
A
+125
o
C
-
30
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
A
+125
o
C
-
60
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
A
+125
o
C
-
120
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C, -55
o
C
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C, -55
o
C
9.95
-
V
Output Current (Sink)
IOL4
VDD = 4.5V, VOUT = 0.4V
1, 2
+125
o
C
1.8
-
mA
-55
o
C
3.3
-
mA
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
2.4
-
mA
-55
o
C
4.0
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
5.6
-
mA
-55
o
C
10
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
18
-
mA
-55
o
C
26
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-
-0.48
mA
-55
o
C
-
-0.81
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-
-1.55
mA
-55
o
C
-
-2.6
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-
-1.18
mA
-55
o
C
-
-2.0
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-3.1
mA
-55
o
C
-
-5.2
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL <
1V
1, 2
+25
o
C, +125
o
C, -55
o
C
-
2
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL <
1V
1, 2
+25
o
C, +125
o
C, -55
o
C
8
-
V
CD4049UBMS
4
Propagation Delay
TPHL
VIN = 10V, VDD = 5V
1, 2, 3
+25
o
C
-
30
ns
VIN = 10V, VDD = 10V
1, 2, 3
+25
o
C
-
40
ns
Propagation Delay
TPLH
VIN = 10V, VDD = 5V
1, 2, 3
+25
o
C
-
90
ns
VIN = 10V, VDD = 10V
1, 2, 3
+25
o
C
-
65
ns
Propagation Delay
TPHL
VIN = 15V, VDD = 5V
1, 2, 3
+25
o
C
-
20
ns
VIN = 15V, VDD = 15V
1, 2, 3
+25
o
C
-
30
ns
Propagation Delay
TPLH
VIN = 15V, VDD = 5V
1, 2, 3
+25
o
C
-
90
ns
VIN = 15V, VDD = 15V
1, 2, 3
+25
o
C
-
50
ns
Transition Time
TTHL
VDD = 10V, VIN = VDD OR GND
1, 2, 3
+25
o
C
-
40
ns
VDD = 15V, VIN = VDD OR GND
1, 2, 3
+25
o
C
-
30
ns
Transition Time
TTLH
VDD = 10V, VIN = VDD OR GND
1, 2, 3
+25
o
C
-
80
ns
VDD = 15V, VIN = VDD OR GND
1, 2, 3
+25
o
C
-
60
ns
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
22.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
7.5
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage
Delta
VTND
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTPD
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
-
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
0.2
A
Output Current (Sink)
IOL5
20% x Pre-Test Reading
Output Current (Source)
IOH5A
20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CD4049UBMS
5
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
-0.5V
OSCILLATOR
50kHz
25kHz
Static Burn-In 1 (Note 1)
2, 4, 6, 10, 12, 13, 15
3, 5, 7-9, 11-14
1, 16
Static Burn-In 2 (Note 1)
2, 4, 6, 10, 12, 13, 15
8
1, 3, 5, 7, 9, 11, 14, 16
Dynamic Burn-In (Note 3)
13
8
1, 16
2, 4, 6, 10, 12, 15
3, 5, 7, 9, 11, 14
Irradiation (Note 2)
2, 4, 6, 10, 12, 13, 15, 16
8
1, 3, 5, 7, 9, 11, 14
NOTE:
1. Each pin except pin 1, pin 16, and GND will have a series resistor of 10K
5%, VDD = 18V
0.5V
2. Each pin except pin 1, pin 16, and GND will have a series resistor of 47K
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V
0.5V
3. Each pin except pin 1, pin 16, and GND will have a series resistor of 4.75K
5%, VDD = 18V
0.5V
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Typical Performance Characteristics
FIGURE 2. MINIMUM AND MAXIMUM VOLTAGE TRANSFER
CHARACTERISTICS
FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
OUTPUT V
O
L
T
A
GE (V
O) (V)
5
4
3
2
1
0
1
2
3
4
INPUT VOLTAGE (VI) (V)
MAXIMUM
MINIMUM
AMBIENT TEMPERATURE (T
A
) = +25
o
C
SUPPLY VOLTAGE (VCC) = 5V
10V
15V
AMBIENT TEMPERATURE (T
A
) = +25
o
C
GATE-TO-SOURCE VOLTAGE (VGS) = 5V
0
30
20
10
40
50
60
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
OUTPUT LO
W (SINK) CURRENT (IOL) (mA)
1
2
3
4
5
6
7
8
70
CD4049UBMS
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