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Электронный компонент: EL5211AIYEZ-T7

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1
FN6143.0
EL5211A
60MHz Rail-to-Rail Input-Output Op Amp
The EL5211A is a low power, high voltage, rail-to-rail input-
output amplifier containing two amplifiers. Operating on
supplies ranging from 5V to 15V, while consuming only
2.5mA per amplifier, the EL5211A has a bandwidth of
60MHz (-3dB) and provides common-mode input ability
beyond the supply rails, as well as rail-to-rail output
capability. This enables the EL5211A to offer maximum
dynamic range at any supply voltage.
The EL5211A also features fast slewing and settling times,
as well as a high output drive capability of 65mA (sink and
source). These features make the EL5211A ideal for high
speed filtering and signal conditioning application. Other
applications include battery-powered, portable devices and
anywhere low power consumption is important.
The EL5211A is available in the 8-pin HMSOP package,
features a standard operational amplifier pinout, and is
specified for operation over a temperature range of -40C to
+85C.
Features
60MHz -3dB bandwidth
Supply voltage = 4.5V to 16.5V
Low supply current (per amplifier) = 2.5mA
High slew rate = 75V/s
Unity-gain stable
Beyond the rails input capability
Rail-to-rail output swing
110mA output short current
Pb-free plus anneal available (RoHS compliant)
Applications
TFT-LCD panels
V
COM
amplifiers
Drivers for A-to-D converters
Data acquisition
Video processing
Audio processing
Active filters
Test equipment
Battery-powered applications
Portable equipment
Pinout
EL5211A
(8-PIN HMSOP)
TOP VIEW
Ordering Information
PART NUMBER
(See Note)
PACKAGE
(Pb-Free)
TAPE &
REEL
PKG. DWG. #
EL5211AIYEZ
8-Pin HMSOP
-
MDP0050
EL5211AIYEZ-T7
8-Pin HMSOP
7"
MDP0050
EL5211AIYEZ-T13
8-Pin HMSOP
13"
MDP0050
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
VS+
VOUTB
VINB-
VINB+
VS-
VINA+
VINA-
VOUTA 1
2
3
4
8
7
6
5
-
+
-
+
Data Sheet
June 15, 2005
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
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2
FN6143.0
June 15, 2005
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Absolute Maximum Ratings
(T
A
= 25C)
Supply Voltage between V
S
+ and V
S
- . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V
S
- - 0.5V, V
S
+0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 65mA
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65C to +150C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40C to +85C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
V
S
+ = +5V, V
S
- = -5V, R
L
= 1k
to 0V, T
A
= 25C, unless otherwise specified
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
V
OS
Input Offset Voltage
V
CM
= 0V
3
15
mV
TCV
OS
Average Offset Voltage Drift (Note 1)
7
V/C
I
B
Input Bias Current
V
CM
= 0V
2
60
nA
R
IN
Input Impedance
1
G
C
IN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
-5.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
for V
IN
from -5.5V to 5.5V
50
70
dB
A
VOL
Open-Loop Gain
-4.5V
V
OUT
4.5V
60
70
dB
OUTPUT CHARACTERISTICS
V
OL
Output Swing Low
I
L
= -5mA
-4.9
-4.8
V
V
OH
Output Swing High
I
L
= 5mA
4.8
4.9
V
I
SC
Short-Circuit Current
125
mA
I
OUT
Output Current
65
mA
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
V
S
is moved from 2.25V to 7.75V
60
80
dB
I
S
Supply Current
No load
5
7.5
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
-4.0V
V
OUT
4.0V, 20% to 80%
75
V/s
t
S
Settling to +0.1% (A
V
= +1)
(A
V
= +1), V
O
= 2V step
80
ns
BW
-3dB Bandwidth
60
MHz
GBWP
Gain-Bandwidth Product
32
MHz
PM
Phase Margin
50
CS
Channel Separation
f = 5MHz
110
dB
d
G
Differential Gain (Note 3)
R
F
= R
G
= 1k
and V
OUT
= 1.4V
0.17
%
d
P
Differential Phase (Note 3)
R
F
= R
G
= 1k
and V
OUT
= 1.4V
0.24
NOTES:
1. Measured over operating temperature range.
2. Slew rate is measured on rising and falling edges.
3. NTSC signal generator used.
EL5211A
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3
FN6143.0
June 15, 2005
Electrical Specifications
V
S
+ = +5V, V
S
- = 0V, R
L
= 1k
to 2.5V, T
A
= 25C, unless otherwise specified
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
V
OS
Input Offset Voltage
V
CM
= 2.5V
3
15
mV
TCV
OS
Average Offset Voltage Drift (Note 4)
7
V/C
I
B
Input Bias Current
V
CM
= 2.5V
2
60
nA
R
IN
Input Impedance
1
G
C
IN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
-0.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
for V
IN
from -0.5V to 5.5V
45
66
dB
A
VOL
Open-Loop Gain
0.5V
V
OUT
4.5V
60
70
dB
OUTPUT CHARACTERISTICS
V
OL
Output Swing Low
I
L
= -5mA
100
200
mV
V
OH
Output Swing High
I
L
= 5mA
4.8
4.9
V
I
SC
Short-Circuit Current
125
mA
I
OUT
Output Current
65
mA
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
V
S
is moved from 4.5V to 15.5V
60
80
dB
I
S
Supply Current
No load
5
7.5
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 5)
1V
V
OUT
4V, 20% to 80%
75
V/s
t
S
Settling to +0.1% (A
V
= +1)
(A
V
= +1), V
O
= 2V step
80
ns
BW
-3dB Bandwidth
60
MHz
GBWP
Gain-Bandwidth Product
32
MHz
PM
Phase Margin
50
CS
Channel Separation
f = 5MHz
110
dB
d
G
Differential Gain (Note 6)
R
F
= R
G
= 1k
and V
OUT
= 1.4V
0.17
%
d
P
Differential Phase (Note 6)
R
F
= R
G
= 1k
and V
OUT
= 1.4V
0.24
NOTES:
4. Measured over operating temperature range.
5. Slew rate is measured on rising and falling edges.
6. NTSC signal generator used.
Electrical Specifications
V
S
+ = +15V, V
S
- = 0V, R
L
= 1k
to 7.5V, T
A
= 25C, unless otherwise specified
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
V
OS
Input Offset Voltage
V
CM
= 7.5V
3
15
mV
TCV
OS
Average Offset Voltage Drift (Note 7)
7
V/C
I
B
Input Bias Current
V
CM
= 7.5V
2
60
nA
R
IN
Input Impedance
1
G
C
IN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
-0.5
+15.5
V
EL5211A
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4
FN6143.0
June 15, 2005
CMRR
Common-Mode Rejection Ratio
for V
IN
from -0.5V to 15.5V
53
72
dB
A
VOL
Open-Loop Gain
0.5V
V
OUT
14.5V
60
70
dB
OUTPUT CHARACTERISTICS
V
OL
Output Swing Low
I
L
= -5mA
100
200
mV
V
OH
Output Swing High
I
L
= 5mA
14.8
14.9
V
I
SC
Short-Circuit Current
125
mA
I
OUT
Output Current
65
mA
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
V
S
is moved from 4.5V to 15.5V
60
80
dB
I
S
Supply Current
No load
5
7.5
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 8)
1V
V
OUT
14V, 20% to 80%
75
V/s
t
S
Settling to +0.1% (A
V
= +1)
(A
V
= +1), V
O
= 2V step
80
ns
BW
-3dB Bandwidth
60
MHz
GBWP
Gain-Bandwidth Product
32
MHz
PM
Phase Margin
50
CS
Channel Separation
f = 5MHz
110
dB
d
G
Differential Gain (Note 9)
R
F
= R
G
= 1k
and V
OUT
= 1.4V
0.16
%
d
P
Differential Phase (Note 9)
R
F
= R
G
= 1k
and V
OUT
= 1.4V
0.22
NOTES:
7. Measured over operating temperature range
8. Slew rate is measured on rising and falling edges
9. NTSC signal generator used
Electrical Specifications
V
S
+ = +15V, V
S
- = 0V, R
L
= 1k
to 7.5V, T
A
= 25C, unless otherwise specified
(Continued)
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
Typical Performance Curves
FIGURE 1. INPUT OFFSET VOLTAGE DISTRIBUTION
FIGURE 2. INPUT OFFSET VOLTAGE DRIFT
200
QUANTIT
Y
(
A
M
P
LIFIERS)
INPUT OFFSET VOLTAGE (mV)
0
-1
2
500
400
100
300
-1
0
-8
-6
-4
-2
-0
2
4
6
8
10
12
TYPICAL
PRODUCTION
DISTRIBUTION
V
S
=5V
T
A
=25C
INPUT OFFSET VOLTAGE DRIFT, TCV
OS
(V/C)
1
3
5
7
9
11
13
15
17
19
21
5
QUANTIT
Y
(
A
MP
LIFIERS)
0
25
15
20
10
V
S
=5V
TYPICAL
PRODUCTION
DISTRIBUTION
EL5211A
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5
FN6143.0
June 15, 2005
FIGURE 3. INPUT OFFSET VOLTAGE vs TEMPERATURE
FIGURE 4. INPUT BIAS CURRENT vs TEMPERATURE
FIGURE 5. OUTPUT HIGH VOLTAGE vs TEMPERATURE
FIGURE 6. OUTPUT LOW VOLTAGE vs TEMPERATURE
FIGURE 7. OPEN-LOOP GAIN vs TEMPERATURE
FIGURE 8. SLEW RATE vs TEMPERATURE
Typical Performance Curves
(Continued)
0
0.5
INP
U
T OFFSE
T

VO
L
T
AGE (m
V)
TEMPERATURE (C)
-0.5
1
-10
-50
30
70
110
150
1.5
2
0
INPUT
BIAS C
URRENT (A)
TEMPERATURE (C)
-0.008
0.008
-0.004
-0.012
0.004
-50
-10
30
70
110
150
V
S
=5V
4.88
4.90
OUTP
U
T
HIGH
V
O
L
T
AGE (V
)
4.86
4.96
4.92
4.94
V
S
=5V
I
OUT
=5mA
TEMPERATURE (C)
-10
-50
30
70
110
150
-4.91
-4.87
OUT
P
UT
LOW VOL
T
AGE (V)
-4.95
-4.85
-4.89
-4.93
V
S
=5V
I
OUT
=5mA
TEMPERATURE (C)
-10
-50
30
70
110
150
70
O
PEN-LO
O
P GAI
N

(
d
B)
75
60
65
V
S
=5V
R
L
=1k
TEMPERATURE (C)
-10
-50
30
70
110
150
75
76
SLEW
RA
TE
(
V
/s
)
74
78
73
72
77
V
S
=5V
TEMPERATURE (C)
-10
-50
30
70
110
150
EL5211A