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Электронный компонент: HFA1120/883

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199
TM
HFA1120/883
850MHz Current Feedback
Amplifier with Offset Adjust
Description
The HFA1120/883 is a high speed, wideband, fast settling
current feedback amplifier. Built with Intersil' proprietary,
complementary bipolar UHF-1 process, it is the fastest
monolithic amplifier available from any semiconductor manu-
facturer.
The HFA1120/883's wide bandwidth, fast settling character-
istic, and low output impedance, make this amplifier ideal for
driving fast A/D converters. Additionally, it offers offset volt-
age nulling capabilities as described in the "Offset Adjust-
ment" section of this datasheet.
Component and composite video systems will also benefit
from this amplifier's performance, as indicated by the excel-
lent gain flatness, and 0.03%/0.05 Degree Differential Gain/
Phase specifications (R
L
= 75
).
Ordering Information
PART NUMBER
TEMPERATURE
RANGE
PACKAGE
HFA1120MJ/883
-55
o
C to +125
o
C
8 Lead CerDIP
Features
This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Low Distortion (HD3, 30MHz) . . . . . . . . . . -84dBc (Typ)
Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ)
Very High Slew Rate . . . . . . . . . . . . . . . 2300V/
s (Typ)
Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 11ns (Typ)
Excellent Gain Flatness (to 50MHz) . . . . . 0.05dB (Typ)
High Output Current . . . . . . . . . . . . . . . . . . 65mA (Typ)
Fast Overdrive Recovery . . . . . . . . . . . . . . <10ns (Typ)
Applications
Video Switching and Routing
Pulse and Video Amplifiers
Wideband Amplifiers
RF/IF Signal Processing
Flash A/D Driver
Medical Imaging Systems
July 1994
Pinout
HFA1120/883
(CERDIP)
TOP VIEW
BAL
-IN
+IN
V-
1
2
3
4
8
7
6
5
NC
V+
OUT
BAL
+
-
Spec Number
511105-883
FN3617.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002. All Rights Reserved
200
Specifications HFA1120/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal. . . . . . . . . . . . . . . . . . . . . . V+ to V-
Output Current (50% Duty Cycle)
. . . . . . . . . . . . . . . . . . . . . . . .
55mA
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Storage Temperature Range . . . . . . . . . . . . . . -65
o
C
T
A
+150
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Resistance
JA
JC
CerDIP Package . . . . . . . . . . . . . . . . . . .
115
o
C/W
30
o
C/W
Maximum Package Power Dissipation at +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W
Package Power Dissipation Derating Factor above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (
V
S
)
. . . . . . . . . . . . . . . . . . . . . . . . . . .
5V
Operating Temperature Range. . . . . . . . . . . . .-55
o
C
T
A
+125
o
C
R
L
S
50
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
5V, A
V
= +1, R
F
= 510
, R
SOURCE
= 0
, R
L
= 100
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Offset Voltage
V
IO
V
CM
= 0V
1
+25
o
C
-6
6
mV
2, 3
+125
o
C, -55
o
C
-10
10
mV
Common Mode
Rejection Ratio
CMRR
V
CM
=
2V
V+ = 3V, V- = -7V
V+ = 7V, V- = -3V
1
+25
o
C
40
-
dB
2, 3
+125
o
C, -55
o
C
38
-
dB
Power Supply
Rejection Ratio
PSRRP
V
SUP
=
1.25V
V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V
1
+25
o
C
45
-
dB
2, 3
+125
o
C, -55
o
C
42
-
dB
PSRRN
V
SUP
=
1.25V
V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V
1
+25
o
C
45
-
dB
2, 3
+125
o
C, -55
o
C
42
-
dB
Non-Inverting Input
(+IN) Current
I
BSP
V
CM
= 0V
1
+25
o
C
-40
40
A
2, 3
+125
o
C, -55
o
C
-65
65
A
+IN Current
Common Mode
Sensitivity
CMS
IBP
V
CM
=
2V
V+ = 3V, V- = -7V
V+ = 7V, V- = -3V
1
+25
o
C
-
40
A/V
2, 3
+125
o
C, -55
o
C
-
50
A/V
+IN Resistance
+R
IN
Note 1
1
+25
o
C
25
-
k
2, 3
+125
o
C, -55
o
C
20
-
k
Inverting Input (-IN)
Current
I
BSN
V
CM
= 0V
1
+25
o
C
-50
50
A
2, 3
+125
o
C, -55
o
C
-75
75
A
-IN Current Adjust
Range
ADJ
IBN
V
CM
= 0V, Note 3
1
+25
o
C
100
-100
A
2, 3
+125
o
C, -55
o
C
100
-100
A
-IN Current
Common Mode
Sensitivity
CMS
IBN
V
CM
=
2V
V+ = 3V, V- = -7V
V+ = 7V, V- = -3V
1
+25
o
C
-
7
A/V
2, 3
+125
o
C, -55
o
C
-
10
A/V
-IN Current Power
Supply Sensitivity
PPSS
IBN
V
SUP
=
1.25V
V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V
1
+25
o
C
-
15
A/V
2, 3
+125
o
C, -55
o
C
-
27
A/V
NPSS
IBN
V
SUP
=
1.25V
V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V
1
+25
o
C
-
15
A/V
2, 3
+125
o
C, -55
o
C
-
27
A/V
Output Voltage
Swing
V
OP100
A
V
= -1
R
L
= 100
V
IN
= -3.5V
1
+25
o
C
3
-
V
V
IN
= -3V
2, 3
+125
o
C, -55
o
C
2.5
-
V
V
ON100
A
V
= -1
R
L
= 100
V
IN
= +3.5V
1
+25
o
C
-
-3
V
V
IN
= +3V
2, 3
+125
o
C, -55
o
C
-
-2.5
V
Spec Number
511105-883
201
Specifications HFA1120/883
Output Voltage
Swing
V
OP50
A
V
= -1
R
L
= 50
V
IN
= -3V
1, 2
+25
o
C, +125
o
C
2.5
-
V
V
IN
= -2V
3
-55
o
C
1.5
-
V
V
ON50
A
V
= -1
R
L
= 50
V
IN
= +3V
1, 2
+25
o
C, +125
o
C
-
-2.5
V
V
IN
= +2V
3
-55
o
C
-
-1.5
V
Output Current
+I
OUT
Note 2
1, 2
+25
o
C, +125
o
C
50
-
mA
3
-55
o
C
30
-
mA
-I
OUT
Note 2
1, 2
+25
o
C, +125
o
C
-
-50
mA
3
-55
o
C
-
-30
mA
Quiescent Power
Supply Current
I
CC
R
L
= 100
1
+25
o
C
14
26
mA
2, 3
+125
o
C, -55
o
C
-
33
mA
I
EE
R
L
= 100
1
+25
o
C
-26
-14
mA
2, 3
+125
o
C, -55
o
C
-33
-
mA
NOTES:
1. Guaranteed from +IN Common Mode Rejection Test, by: +R
IN
= 1/CMS
IBP
.
2. Guaranteed from V
OUT
Test with R
L
= 50
, by: I
OUT
= V
OUT
/50
.
3. This is the minimum change in inverting input bias current when a BAL pin is connected to V- through a 50
resistor.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
5V, A
V
= +2, R
F
= 360
, R
L
= 1
00
, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
-3dB Bandwidth
BW(-1)
A
V
= -1, R
F
= 430
V
OUT
=
200mV
P-P
1
+25
o
C
300
-
MHz
BW(+1)
A
V
= +1, R
F
= 510
V
OUT
=
200mV
P-P
1
+25
o
C
550
-
MHz
BW(+2)
A
V
= +2,
V
OUT
=
200mV
P-P
1
+25
o
C
350
-
MHz
Gain Flatness
GF30
A
V
= +2, R
F
= 510
, f
30MHz
V
OUT
=
200mV
P-P
1
+25
o
C
-
0.04
dB
GF50
A
V
= +2, R
F
= 510
, f
50MHz
V
OUT
=
200mV
P-P
1
+25
o
C
-
0.10
dB
GF100
A
V
= +2, R
F
= 510
, f
100MHz
V
OUT
=
200mV
P-P
1
+25
o
C
-
0.30
dB
Slew Rate
+SR(+1)
A
V
= +1, R
F
= 510
V
OUT
=
5V
P-P
1, 2
+25
o
C
1200
-
V/
s
-SR(+1)
A
V
= +1, R
F
= 510
V
OUT
=
5V
P-P
1, 2
+25
o
C
1100
-
V/
s
+SR(+2)
A
V
= +2, V
OUT
=
5V
P-P
1, 2
+25
o
C
1650
-
V/
s
-SR(+2)
A
V
= +2, V
OUT
=
5V
P-P
1, 2
+25
o
C
1500
-
V/
s
Rise and Fall Time
T
R
A
V
= +2, V
OUT
=
0.5V
P-P
1, 2
+25
o
C
-
1
ns
T
F
A
V
= +2, V
OUT
=
0.5V
P-P
1, 2
+25
o
C
-
1
ns
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Tested at: V
SUPPLY
=
5V, A
V
= +1, R
F
= 510
, R
SOURCE
= 0
, R
L
= 100
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
511105-883
202
Specifications HFA1120/883
Overshoot
+OS
A
V
= +2, V
OUT
=
0.5V
P-P
1, 3
+25
o
C
-
25
%
-OS
A
V
= +2, V
OUT
=
0.5V
P-P
1, 3
+25
o
C
-
20
%
Settling Time
TS(0.1)
A
V
= +2, R
F
= 510
V
OUT
=
2V to 0V, to 0.1%
1
+25
o
C
-
20
ns
TS(0.05)
A
V
= +2, R
F
= 510
V
OUT
=
2V to 0V, to 0.05%
1
+25
o
C
-
33
ns
2nd Harmonic
Distortion
HD2(30)
A
V
= +2, f = 30MHz
V
OUT
=
2V
P-P
1
+25
o
C
-
-48
dBc
HD2(50)
A
V
= +2, f = 50MHz
V
OUT
=
2V
P-P
1
+25
o
C
-
-45
dBc
HD2(100)
A
V
= +2, f = 100MHz
V
OUT
=
2V
P-P
1
+25
o
C
-
-35
dBc
3rd Harmonic
Distortion
HD3(30)
A
V
= +2, f = 30MHz
V
OUT
=
2V
P-P
1
+25
o
C
-
-65
dBc
HD3(50)
A
V
= +2, f = 50MHz
V
OUT
=
2V
P-P
1
+25
o
C
-
-60
dBc
HD3(100)
A
V
= +2, f = 100MHz
V
OUT
=
2V
P-P
1
+25
o
C
-
-40
dBc
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot-to-lot and within lot variation.
2. Measured between 10% and 90% points.
3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for A
V
= +1. Please refer to
Performance Curves.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3
Group A Test Requirements
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Characterized at: V
SUPPLY
=
5V, A
V
= +2, R
F
= 360
, R
L
= 1
00
, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
511105-883
203
HFA1120/883
Die Characteristics
DIE DIMENSIONS:
63 x 44 x 19 mils
1 mils
1600 x 1130 x 483
m
25.4
m
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Type: Metal 2: AICu(2%)
Thickness: Metal 1: 8k
0.4k
Thickness: Metal 2: 16k
0.8k
GLASSIVATION:
Type: Nitride
Thickness: 4k
0.5k
WORST CASE CURRENT DENSITY:
2.0 x 10
5
A/cm
2
at 47.5mA
TRANSISTOR COUNT: 52
SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)
Metallization Mask Layout
HFA1120/883
+IN
V-
V
L
BAL
OUT
-IN
BAL
V
H
V+
Spec Number
511105-883