3-66
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
A
M
EMITTER
GATE
COLLECTOR
(FLANGE)
GATE
R
2
R
1
COLLECTOR
EMITTER
Features
Logic Level Gate Drive
Internal Voltage Clamp
ESD Gate Protection
T
J
= 175
o
C
Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resis-
tor are provided in the gate circuit.
The development type number for this device is TA49076.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP20N35G3VL
T0-220AB
20N35GVL
HGT1S20N35G3VL
T0-262AA
20N35GVL
HGT1S20N35G3VLS
T0-263AB
20N35GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
April 1995
File Number
4006
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
UNITS
Collector-Emitter Bkdn Voltage At 10mA, R
GE
= 1k
. . . . . . . . . . . . . . . . . . . . . . . BV
CER
375
V
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
24
V
Collector Current Continuous At V
GE
= 5.0V, T
C
= +25
o
C, Figure 7 . . . . . . . . . . . . . I
C25
20
A
At V
GE
= 5.0V, T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . .I
C100
20
A
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
10
V
Inductive Switching Current At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . I
SCIS
26
A
At L = 2.3mH, T
C
= +175
o
C . . . . . . . . . . . . . . . . . . . . . I
SCIS
18
A
Collector to Emitter Avalanche Energy At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . E
AS
775
mJ
Power Dissipation Total At T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150
W
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
-40 to +175
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
260
o
C
Electrostatic Voltage at 100pF, 1500
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
6
KV
NOTE: May be exceeded if I
GEM
is limited to 10mA.
3-67
Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 10mA,
V
GE
= 0V
T
C
= +175
o
C
310
345
380
V
T
C
= +25
o
C
320
350
380
V
T
C
= -40
o
C
320
355
390
V
Collector-Emitter Breakdown Voltage
BV
CER
I
C
= 10mA
V
GE
= 0V
R
GE
= 1k
T
C
= +175
o
C
300
340
375
V
T
C
= +25
o
C
315
345
375
V
T
C
= -40
o
C
315
350
390
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A
V
CE
= 12V
T
C
= +25
o
C
-
3.7
-
V
Gate Charge
Q
G(ON)
I
C
= 10A
V
GE
= 5V
V
CE
= 12V
T
C
= +25
o
C
-
28.7
-
nC
Collector-Emitter Clamp Bkdn. Voltage
BV
CE(CL)
I
C
= 10A
R
G
= 0
T
C
= +175
o
C
325
360
395
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
C
= 10mA
T
C
= +25
o
C
20
32
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= 250V
T
C
= +25
o
C
-
-
5
A
V
CE
= 250V
T
C
= +175
o
C
-
-
250
A
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 10A
V
GE
= 4.5V
T
C
= +25
o
C
-
1.3
1.6
V
T
C
= +175
o
C
-
1.25
1.5
V
I
C
= 20A
V
GE
= 5.0V
T
C
= +25
o
C
-
1.6
2.8
V
T
C
= +175
o
C
-
1.9
3.5
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1mA
V
CE
= V
GE
T
C
= +25
o
C
1.3
1.8
2.3
V
Gate Series Resistance
R
1
T
C
= +25
o
C
-
1.0
-
k
Gate-Emitter Resistance
R
2
T
C
= +25
o
C
10
17
25
k
Gate-Emitter Leakage Current
I
GES
V
GE
=
10V
400
590
1000
A
Gate-Emitter Breakdown Voltage
BV
GES
I
GES
=
2mA
12
14
-
V
Current Turn-Off Time-Inductive Load
t
D(OFF)I
+
t
F(OFF)I
I
C
= 10A, R
G
= 25
,
L = 550 H, R
L
= 26.4
, V
GE
= 5V,
V
CL
= 300V, T
C
= +175
o
C
-
15
30
s
Inductive Use Test
I
SCIS
L = 2.3mH,
V
G
= 5V,
R
G
= 0
T
C
= +175
o
C
18
-
-
A
T
C
= +25
o
C
26
-
-
A
Thermal Resistance
R
JC
-
-
1.0
o
C/W
3-68
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
10
2
3
4
5
40
20
0
6
30
50
1
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= -40
o
C
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
100
80
60
40
20
0
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
2
4
6
8
10
V
GE
=10V
7V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, T
C
= +25
o
C
I
CE
, COLLECT
OR EMITTER CURRENT (A)
V
CE(SAT)
, SATURATION VOLTAGE (V)
T
C
= +175
o
C
V
GE
= 5.0V
V
GE
= 4.5V
0
1
2
3
4
0
10
20
30
40
V
GE
= 4.0V
4
3
2
1
0
40
30
20
10
0
I
CE
, COLLECT
OR EMITTER CURRENT (A)
V
CE(SAT)
, SATURATION VOLTAGE (V)
5
V
GE
= 4.5V
-40
o
C
+25
o
C
+175
o
C
50
-25
+25
+75
+125
+175
1.1
1.2
1.3
1.4
V
CE(SA
T)
, SA
TURA
TION
VOL
T
AGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
I
CE
= 10A
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
-25
+25
+75
+125
+175
T
J
, JUNCTION TEMPERATURE (
o
C)
V
CE(SA
T)
, SA
TURA
TION
VOL
T
AGE (V)
1.5
1.7
1.9
2.1
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
I
CE
= 20A
2.2
2.0
1.8
1.6
V
GE
= 4.5V
V
GE
= 4.5V
3-69
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING
ENERGY AS A FUNCTION OF INDUCTANCE
Typical Performance Curves
(Continued)
+25
+50
+75
+100
+125
+150
25
20
15
10
5
0
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
+175
V
GE
= 5.0V
PACKAGE LIMITED
-25
+75
+125
+175
1.2
1.0
T
J
, JUNCTION TEMPERATURE (
o
C)
+25
V
TH
, NORMAILZED THRESHOLD VOL
T
AGE
1.1
0.9
0.7
0.6
0.8
0.5
I
CE
= 1mA
T
J
, JUNCTION TEMPERATURE (
o
C)
LEAKAGE CURRENT (
A
)
+25
+50
+75
+100
+125
+150
+175
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
V
ECS
= 20V
V
CES
= 250V
T
J
, JUNCTION TEMPERATURE (
o
C)
+175
+150
+125
+100
+75
+50
+25
10
12
14
16
18
t
(OFF)I
, TURN OFF TIME
(
s
)
V
CL
= 300V, R
GE
= 25
, V
GE
= 5V, L= 550 H
I
CE
= 6A, R
L
= 50
I
CE
=15A, R
L
= 20
I
CE
=10A, R
L
= 30
INDUCTANCE (mH)
0
2
4
6
8
10
40
30
20
10
5
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
35
25
15
V
GE
= 5V
+25
o
C
+175
o
C
45
0
2
4
6
8
10
400
600
800
1000
INDUCTANCE (mH)
E
AS
, ENERGY (mJ)
+25
o
C
+175
o
C
V
GE
= 5V
200
1200
3-70
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE - EMITTER RESISTANCE
Test Circuits
FIGURE 17. USE TEST CIRCUIT
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
C, CAP
ACIT
ANCE (pF)
0
5
10
15
20
25
200
400
600
800
1000
1200
1400
1600
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
12
10
8
6
4
2
0
6
5
1
0
4
3
2
0
10
20
30
40
V
GE
, GA
TE-EMITTER VOL
T
AGE (V)
I
G
REF = 1.022mA, R
L
= 1.2
, T
C
= +25
o
C
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE
(V)
V
CE
= 4V
V
CE
= 8V
V
CE
= 12V
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
10
-2
10
-1
10
0
10
-5
10
-3
10
-1
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
0.5
0.1
SINGLE PULSE
0.01
0.05
0.2
Z
JC
, NORMALIZED THERMAL RESPONSE
0.02
0
2000
4000
6000
8000
10000
335
340
345
350
R
GE
, GATE-TO-EMITTER RESISTANCE (V)
BV
CER
,
COLLECT
OR-EMITTER
I
CER
= 10mA
T
C
= +25
o
C AND +175
o
C
BKDN
VOL
T
AGE
(V)
R
G
G
C
E
V
DD
2.3mH
DUT
R
GEN
= 25
5V
R
GEN
= 50
+
-
V
CC
DUT
300V
C
G
E
R
GE
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
L = 550
H
R
L
10V
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