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Электронный компонент: HGT1S2N120BNS

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File Number
4696.2
HGTP2N120BN, HGTD2N120BNS,
HGT1S2N120BNS
12A, 1200V, NPT Series N-Channel IGBT
The HGTP2N120BN, HGTD2N120BNS, and
HGT1S2N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49312.
Symbol
Features
12A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 160ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Thermal Impedance SPICE Model
Temperature Compensating SABERTM Model
www.intersil.com
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Packaging
JEDEC TO-220AB
JEDEC TO-252AA
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP2N120BN
TO-220AB
2N120BN
HGTD2N120BNS
TO-252AA
2N120BN
HGT1S2N120BNS
TO-263AB
2N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120BNS9A.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
E
(FLANGE)
G
COLLECTOR
E
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
SABERTM is a trademark of Analogy, Inc.
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP2N120BN,
HGTD2N120BNS
HGT1S2N120BNS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
12
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
5.6
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
20
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
12A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
104
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83
W/
o
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
18
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
260
o
C
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
Short Circuit Withstand Time (Note 3) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
15
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 3A, L = 4mH, T
J
= 25
o
C.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 51
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 125
o
C
-
40
-
A
T
C
= 150
o
C
-
-
0.5
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 2.3A,
V
GE
= 15V
T
C
= 25
o
C
-
2.45
2.7
V
T
C
= 150
o
C
-
3.6
4.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 20
A, V
CE
= V
GE
6.0
6.8
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 51
,
V
GE
= 15V,
L = 400
H, V
CE(PK)
= 1200V
12
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 2.3A, V
CE
= 0.5 BV
CES
-
10.2
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 2.3A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
24
30
nC
V
GE
= 20V
-
32
39
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 2.3A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 51
L = 5mH
Test Circuit (Figure 18)
-
21
25
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
185
240
ns
Current Fall Time
t
fI
-
100
130
ns
Turn-On Energy (Note 4)
E
ON1
-
83
-
J
Turn-On Energy (Note 4)
E
ON2
-
370
500
J
Turn-Off Energy (Note 5)
E
OFF
-
195
270
J
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 2.3A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 51
L = 5mH
Test Circuit (Figure 18)
-
25
30
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
195
260
ns
Current Fall Time
t
fI
-
160
200
ns
Turn-On Energy (Note 4)
E
ON1
-
83
-
J
Turn-On Energy (Note 4)
E
ON2
-
725
1000
J
Turn-Off Energy (Note 5)
E
OFF
-
280
380
J
Thermal Resistance Junction To Case
R
JC
-
-
1.2
o
C/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
0
4
25
75
100
125
150
10
12
6
2
V
GE
= 15V
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
10
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
2
4
600
800
400
200
1000
1200
0
12
14
8
6
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 1mH
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 150
o
C, R
G
= 51
, L = 5mH, V
CE
= 960V
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
0.5
10
5.0
2.0
50
1.0
100
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
T
C
V
GE
15V
110
o
C
110
o
C 12V
T
C
V
GE
15V
75
o
C
75
o
C
12V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 1.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
12
13
14
15
5
10
15
20
20
25
30
40
t
SC
I
SC
25
35
V
CE
= 840V, R
G
= 51
, T
J
= 125
o
C
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
1
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
2
6
5
6
7
8
10
250
s PULSE TEST
DUTY CYCLE < 0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
4
2
4
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
4
6
8
0
1
2
3
4
7
2
10
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
250
s PULSE TEST
5
6
E
ON2
, TURN-ON ENERGY LOSS (mJ)
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1.0
1
0
2.0
2
0
4
5
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
0.5
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
3
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
0
1
0
200
100
400
3
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
4
5
250
350
150
50
2
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y TIME
(ns)
0
15
20
25
35
40
1
45
4
5
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
3
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
0
10
20
15
4
0
3
1
5
30
40
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
5
25
35
2
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
300
1
150
250
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
4
450
350
400
5
3
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
200
2
100
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
R
G
= 51
, L = 5mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
0
50
200
250
1
150
300
400
5
4
3
2
100
350
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
15
13
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
20
25
14
15
30
T
C
= 150
o
C
T
C
= -55
o
C
250
s PULSE TEST
DUTY CYCLE < 0.5%, V
CE
= 20V
10
T
C
= 25
o
C
7
5
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
5
20
0
0
20
5
25
V
CE
= 800V
I
G(REF)
= 1mA, R
L
= 260
, T
C
= 25
o
C
V
CE
= 1200V
10
15
35
V
CE
= 400V
30
10
15
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAP
A
CIT
ANCE (nF)
C
RES
0
5
10
15
20
25
0
C
IES
C
OES
0.2
0.6
0.8
0.4
FREQUENCY = 1MHz
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.0
2.5
0
1.0
0
2.0
0.5
3.0
DUTY CYCLE < 0.5%, T
C
= 110
o
C
250
s PULSE TEST
1.5
3.0
4.0
V
GE
= 10V
V
GE
= 15V
2.0
0.5
1.5
2.5
3.5
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS