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Электронный компонент: HGT1S5N120CNS

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1
File Number
4596.2
HGTP5N120CN, HGT1S5N120CNS
25A, 1200V, NPT Series N-Channel IGBT
The HGTP5N120CN and HGT1S5N120CNS are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49309.
Symbol
Features
25A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 350ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Temperature Compensating SABERTM Model
Thermal Impedance SPICE Model
www.intersil.com
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP5N120CN
TO-220AB
G5N120CN
HGT1S5N120CNS
TO-263AB
G5N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120CNS9A.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
E
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
SABERTM is a trademark of Analogy, Inc.
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP5N120CN
HGT1S5N120CNS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
25
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
12
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
40
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
30A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
167
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.33
W/
o
C
Forward Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
36
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
15
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 125
o
C
-
100
-
A
T
C
= 150
o
C
-
-
2
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 5.5A,
V
GE
= 15V
T
C
= 25
o
C
-
2.1
2.4
V
T
C
= 150
o
C
-
2.9
3.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 45
A, V
CE
= V
GE
6.0
7.0
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 25
,
V
GE
= 15V,
L = 200
H, V
CE(PK)
= 1200V
25
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 5.5A, V
CE
= 0.5 BV
CES
-
10.6
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 5.5A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
45
55
nC
V
GE
= 20V
-
60
75
nC
HGTP5N120CN, HGT1S5N120CNS
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 5.5A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 25
L = 5mH
Test Circuit (Figure 18)
-
22
30
ns
Current Rise Time
t
rI
-
12
16
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
180
250
ns
Current Fall Time
t
fI
-
280
350
ns
Turn-On Energy (Note 3)
E
ON1
-
220
-
J
Turn-On Energy (Note 3)
E
ON2
-
400
500
J
Turn-Off Energy (Note 4)
E
OFF
-
640
700
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 5.5A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 25
L = 5mH
Test Circuit (Figure 18)
-
20
25
ns
Current Rise Time
t
rI
-
12
16
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
225
300
ns
Current Fall Time
t
fI
-
350
400
ns
Turn-On Energy (Note 3)
E
ON1
-
220
-
J
Turn-On Energy (Note 3)
E
ON2
-
1
1.2
mJ
Turn-Off Energy (Note 4)
E
OFF
-
1
1.1
mJ
Thermal Resistance Junction To Case
R
JC
-
-
0.75
o
C/W
NOTES:
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
5
0
20
10
15
V
GE
= 15V
25
75
100
125
150
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
15
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
5
10
600
800
400
200
1000
1200
0
20
25
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 200
H
30
35
HGTP5N120CN, HGT1S5N120CNS
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
50
200
2
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.75
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
J
= 150
o
C, R
G
= 25
, L = 5mH, V
CE
= 960V
T
C
V
GE
110
o
C
12V
15V
15V
75
o
C
110
o
C
75
o
C
12V
T
C
= 75
o
C, V
GE
= 5V
3
5
10
IDEAL DIODE
100
20
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
10
11
12
13
14
15
10
15
20
25
30
30
40
50
60
t
SC
35
70
20
V
CE
= 840V, R
G
= 25
, T
J
= 125
o
C
I
SC
0
1
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
5
10
15
6
8
10
30
25
20
35
2
3
5
7
9
250
s PULSE TEST
DUTY CYCLE < 0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
60
0
2
4
0
6
8
10
10
40
50
70
80
DUTY CYCLE < 0.5%, V
GE
= 15V
250
s PULSE TEST
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
E
ON2
, TURN-ON ENERGY LOSS (mJ)
2500
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2000
1000
500
5
3
7
6
4
2
3000
8
9
10
0
T
J
= 25
o
C, V
GE
= 15V, V
GE
= 12V
T
J
= 150
o
, V
GE
= 15V, V
GE
= 12V
R
G
= 25
, L = 5mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (
J)
0
4
2
1
3
5
250
750
500
1000
1250
1500
9
6
8
7
10
R
G
= 25
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
1750
HGTP5N120CN, HGT1S5N120CNS
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y TIME
(ns)
3
2
4
6
15
20
25
30
35
5
40
7
9
8
10
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
R
G
= 25
, L = 5mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
3
0
10
30
25
15
7
2
20
6
5
4
10
9
8
35
40
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
R
G
= 25
, L = 5mH, V
CE
= 960V
2
3
6
1
300
5
4
100
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
9
8
7
600
400
500
10
0
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 25
, L = 5mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
2
3
5
1
300
400
4
100
200
500
600
8
7
6
10
9
700
800
T
J
= 150
o
C, V
GE
= 12V AND 15V
T
J
= 25
o
C, V
GE
= 12V AND 15V
900
R
G
= 25
, L = 5mH, V
CE
= 960V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
10
12
6
7
8
9
11
V
GE
, GATE TO EMITTER VOLTAGE (V)
10
20
30
13
14
40
250
s PULSE TEST
DUTY CYCLE < 0.5%, V
CE
= 20V
50
60
70
80
15
T
C
= -55
o
C
T
C
= 150
o
C
16
90
100
T
C
= 25
o
C
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
8
4
20
2
6
0
0
50
10
30
60
40
14
10
12
16
I
G(REF)
= 1mA, R
L
= 120
, T
C
= 25
o
C
V
CE
= 800V
V
CE
= 1200V
V
CE
= 400V
HGTP5N120CN, HGT1S5N120CNS