1
File Number
4413.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
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Copyright
Intersil Corporation 2000
HGTP7N60B3D, HGT1S7N60B3DS
14A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C at rated current. The IGBT is developmental type
TA49190. The diode used in anti-parallel with the IGBT is the
RHRD660 (TA49057).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49191.
Symbol
Features
14A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 120ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP7N60B3D
TO-220AB ALT
G7N60B3D
HGT1S7N60B3DS
TO-263AB
G7N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S7N60B3DS9A.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
14
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
7
A
Average Rectified Forward Current at T
C
= 152
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
6
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
56
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
35A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
60
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.476
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
2
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
12
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than I
CM
.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 50
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
100
A
T
C
= 150
o
C
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
, V
GE
= 15V
T
C
= 25
o
C
-
1.8
2.1
V
T
C
= 150
o
C
-
2.1
2.4
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
3.0
5.1
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
100
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 50
,
V
GE
= 15V, L = 100
H
V
CE
= 480V
42
-
-
A
V
CE
= 600V
35
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.7
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0. 5BV
CES
V
GE
= 15V
-
23
28
nC
V
GE
= 20V
-
30
37
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode Both at T
J
= 25
o
C,
I
CE
= I
C110
, V
CE
= 0.8 BV
CES,
V
GE
= 15V, R
G
= 50
, L = 2mH,
Test Circuit (Figure 19)
-
26
-
ns
Current Rise Time
t
rI
-
21
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
130
160
ns
Current Fall Time
t
fI
-
60
80
ns
Turn-On Energy
E
ON
-
160
200
J
Turn-Off Energy (Note 3)
E
OFF
-
120
200
J
HGTP7N60B3D, HGT1S7N60B3DS
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode Both at T
J
= 150
o
C
I
CE
= I
C110
, V
CE
= 0.8 BV
CES
,
V
GE
= 15V, R
G
= 50
, L = 2mH,
Test Circuit (Figure 19)
-
24
-
ns
Current Rise Time
t
rI
-
22
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
230
295
ns
Current Fall Time
t
fI
-
120
175
ns
Turn-On Energy
E
ON
-
310
350
J
Turn-Off Energy (Note 3)
E
OFF
-
350
500
J
Diode Forward Voltage
V
EC
I
EC
= 7A
-
1.85
2.2
V
Diode Reverse Recovery Time
t
rr
I
EC
= 7A, dI
EC
/dt = 200A/
s
-
-
37
ns
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
-
32
ns
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
2.1
o
C/W
Diode
-
-
3.0
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
25
50
75
100
125
150
4
0
8
16
12
6
2
10
14
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
600
30
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
10
20
200
300
100
0
400
500
50
0
40
700
T
J
= 150
o
C, R
G
= 50
, V
GE
= 15V
HGTP7N60B3D, HGT1S7N60B3DS
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (V)
10
5
10
1
100
15
4
6
8
3
2
400
T
J
= 150
o
C, R
G
= 50
, L = 2mH, V
CE
= 480V
T
C
V
GE
110
o
C 10V
110
o
C 15V
10V
75
o
C
15V
75
o
C
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 2.1
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
10
11
12
13
14
15
20
40
60
80
100
2
6
10
14
18
V
CE
= 360V, R
G
= 50
, T
J
= 125
o
C
I
SC
t
SC
0
2
4
6
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
10
20
30
1
3
5
7
5
15
25
DUTY CYCLE < 0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
PULSE DURATION = 250
s
0
4
6
8
2
3
5
7
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
20
40
30
1
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -55
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
E
ON
, TURN-ON ENERGY LOSS (
J)
1200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
15
1600
800
400
0
9
5
1
3
7
11
13
T
J
= 25
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
R
G
= 50
, L = 2mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (
J)
15
800
0
11
9
5
1
200
600
1000
3
7
13
400
T
J
= 150
o
C, V
GE
= 10V and 15V
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 25
o
C, V
GE
= 10V and 15V
HGTP7N60B3D, HGT1S7N60B3DS
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y TIME
(ns)
10
5
1
9
11
15
20
30
40
50
60
3
7
13
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 15V
R
G
= 50
, L = 2mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
1
20
60
40
80
100
0
5
9
13
15
3
7
11
120
140
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 10V
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 25
o
C and 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
5
9
13
15
100
150
200
250
50
3
7
11
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
1
5
9
13
15
80
120
100
3
7
11
40
60
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V and 15V
T
J
= 25
o
C, V
GE
= 10V and 15V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
16
24
32
8
14
6
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
40
10
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
s
V
CE
= 10V
DUTY CYCLE = < 0.5%
Q
G
, GATE CHARGE (nC)
20
0
12
15
9
6
3
0
12
8
16
28
V
GE
,
G
A
TE T
O
EMITTER V
O
L
T
A
GE (V)
24
4
I
g(REF)
= 0.758mA, R
L
= 86
,
T
C
= 25
o
C
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
HGTP7N60B3D, HGT1S7N60B3DS
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