ChipFind - документация

Электронный компонент: HGT5A40N60A4D

Скачать:  PDF   ZIP
2-1
File Number
4783.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
HGT5A40N60A4D
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT5A40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. The
IGBT used is the development type TA49347. The diode
used in anti-parallel is the development type 49374.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49349.
Symbol
Features
100kHz Operation at 390V, 40A
200kHz Operation at 390V, 20A
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . . . 55ns at T
J
= 125
o
Low Conduction Loss
Packaging
JEDEC STYLE STRETCH TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT5A40N60A4D
TO-247-ST
40N60A4D
NOTE: When ordering, use the entire part number.
C
E
G
COLLECTOR
(FLANGE)
C
E
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
February 2000
2-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT5A40N60A4D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
75
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
63
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
300
A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . SSOA
200A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
625
W
Power Dissipation Derating T
C
> 25
o
C
5
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
260
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
J
= 25
o
C
-
-
250
A
T
J
= 125
o
C
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 40A,
V
GE
= 15V
T
J
= 25
o
C
-
1.7
2.7
V
T
J
= 125
o
C
-
1.5
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
4.5
5.6
7
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 2.2
,
V
GE
= 15V
L = 100
H, V
CE
= 600V
200
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 40A, V
CE
= 0.5 BV
CES
-
8.5
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 40A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
350
405
nC
V
GE
= 20V
-
450
520
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 40A
V
CE
= 0.65 BV
CES
V
GE
=15V
R
G
= 2.2
L = 200
H
Test Circuit (Figure 24)
-
25
-
ns
Current Rise Time
t
rI
-
18
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
145
-
ns
Current Fall Time
t
fI
-
35
-
ns
Turn-On Energy (Note 2)
E
ON1
-
400
-
J
Turn-On Energy (Note 2)
E
ON2
-
850
-
J
Turn-Off Energy (Note 3)
E
OFF
-
370
-
J
HGT5A40N60A4D
2-3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C
I
CE
= 40A
V
CE
= 0.65 BV
CES
V
GE
= 15V
R
G
= 2.2
L = 200
H
Test Circuit (Figure 24)
-
27
-
ns
Current Rise Time
t
rI
-
20
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
185
225
ns
Current Fall Time
t
fI
-
55
95
ns
Turn-On Energy (Note 2)
E
ON1
-
400
-
J
Turn-On Energy (Note 2)
E
ON2
-
1220
1400
J
Turn-Off Energy (Note 3)
E
OFF
-
700
800
J
Diode Forward Voltage
V
EC
I
EC
= 40A
-
2.25
2.7
V
Diode Reverse Recovery Time
t
rr
I
EC
= 40A, dI
EC
/dt = 200A/
s
-
48
55
ns
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
38
45
ns
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
0.2
o
C/W
Diode
-
-
1
o
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
10
0
40
20
30
25
75
100
125
150
60
50
V
GE
= 15V
70
80
PACKAGE LIMITED
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
100
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
25
50
300
400
200
100
500
600
0
125
150
75
175
200
225
T
J
= 150
o
C, R
G
= 2.2
, V
GE
= 15V, L = 100
H
HGT5A40N60A4D
2-4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
200
70
10
40
300
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
100
T
C
V
GE
15V
75
o
C
R
G
= 2.2
, L = 200
H, V
CE
= 390V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
10
11
12
15
2
10
200
1200
t
SC
I
SC
12
1000
13
14
4
6
8
400
600
800
16
V
CE
= 390V, R
G
= 2.2
, T
J
= 125
o
C
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
20
0.2
0.6
0.8
40
50
30
60
70
80
1.0
1.4
1.2
2.0
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 25
o
C
DUTY CYCLE < 0.5%, V
GE
= 12V
1.8
1.6
0.4
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
PULSE DURATION = 250
s
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
0.2
0.4
0.6
0.8
1.0
1.4
1.2
1.6
1.8
2.0
10
20
40
50
30
60
70
80
0
2.2
PULSE DURATION = 250
s
E
ON2
, TURN-ON ENERGY LOSS (
J)
2500
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2000
1000
500
3000
0
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 2.2
, L = 200
H, V
CE
= 390V
4000
3500
4500
5000
10
0
30
40
50
60
20
70
80
5500
1200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (
J)
0
200
800
400
1000
1400
1600
600
10
0
30
40
50
60
20
70
80
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
1800
R
G
= 2.2
, L = 200
H, V
CE
= 390V
HGT5A40N60A4D
2-5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
,
TURN-ON DELA
Y TIME
(ns)
22
24
26
28
30
32
R
G
= 2.2
, L = 200
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
20
10
0
40
50
60
70
30
80
34
36
38
40
42
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
0
40
20
20
10
0
40
50
60
70
30
80
60
120
100
80
R
G
= 2.2
, L = 200
H, V
CE
= 390V
T
J
= 125
o
C, T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
10
30
0
150
20
130
140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
50
190
70
60
170
180
40
160
80
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
V
GE
= 12V OR 15V, T
J
= 25
o
C
R
G
= 2.2
, L = 200
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
35
30
45
40
10
30
0
20
50
70
60
40
80
55
50
65
60
70
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 2.2
, L = 200
H, V
CE
= 390V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
50
100
7
8
9
10
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
250
6
300
350
400
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
PULSE DURATION = 250
s
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
2
14
0
0
100
50
150
4
10
200
250
300
350
400
6
8
12
16
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
I
G(REF)
= 1mA, R
L
= 7.5
, T
C
= 25
o
C
HGT5A40N60A4D