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Электронный компонент: HGTD10N40F1S

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3-1
HGTD10N40F1, HGTD10N40F1S,
HGTD10N50F1, HGTD10N50F1S
10A, 400V and 500V N-Channel IGBTs
Features
10A, 400V and 500V
V
CE(ON)
2.5V Max.
T
FALL
1.4
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Applications
Power Supplies
Motor Drives
Protective Circuits
Description
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and
HGTD10N50F1S are n-channel enhancement-mode insu-
lated gate bipolar transistors (IGBTs) designed for high volt-
age, low on-dissipation applications such as switching
regulators and motor drivers. These types can be operated
directly from low power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD10N40F1
TO-251AA
G10N40
HGTD10N50F1
TO-251AA
G10N50
HGTD10N40F1S
TO-252AA
G10N40
HGTD10N50F1S
TO-252AA
G10N50
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A.
Packages
HGTD10N40F1, HGTD10N50F1
JEDEC TO-251AA
HGTD10N40F1S, HGTD10N50F1S
JEDEC TO-252AA
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
EMITTER
GATE
C
E
G
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTD10N40F1
HGTD10N40F1S
HGTD10N50F1
HGTD10N50F1S
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
400
500
V
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
400
500
V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
20
20
V
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
12
12
A
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
10
10
A
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75
75
W
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
0.6
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to +150
-55 to +150
o
C
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
March 1997
File Number
2425.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
3-2
Specifications HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
,
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTD10N40F1
HGTD10N40F1S
HGTD10N50F1
HGTD10N50F1S
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown
Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2.0
4.5
2.0
4.5
V
Zero Gate Voltage Collector
Current
I
CES
T
J
= +150
o
C, V
CE
= 400V
-
250
-
-
A
T
J
= +150
o
C, V
CE
= 500V
-
-
-
250
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
20V, V
CE
= 0V
-
100
-
100
nA
Collector-Emitter On-Voltage
V
CE(ON)
T
J
= +150
o
C, I
C
= 5A, V
GE
= 10V
-
2.5
-
2.5
V
T
J
= +150
o
C, I
C
= 5A, V
GE
= 15V
-
2.2
-
2.2
V
T
J
= +25
o
C, I
C
= 5A, V
GE
= 10V
-
2.5
-
2.5
V
T
J
= +25
o
C, I
C
= 5A, V
GE
= 15V
-
2.2
-
2.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 5A, V
CE
= 10V
5.3 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 5A, V
CE
= 10V
13.4 (Typ)
nC
Turn-On Delay Time
t
D(ON)
Resistive Load, I
C
= 5A,
V
CE
= 400V, R
L
= 80
,
T
J
= +150
o
C, V
GE
= 10V,
R
G
= 25
45 (Typ)
ns
Rise Time
t
RI
35 (Typ)
ns
Turn-Off Delay Time
t
D(OFF)
130 (Typ)
ns
Fall Time
t
FI
1400 (Typ)
ns
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = W
OFF
x
Frequency)
W
OFF
0.64 (Typ)
mJ
Turn-Off Delay Time
t
D(OFF)
Inductive Load (See Figure 11),
I
C
= 5A, V
CE(CLP)
= 400V,
R
L
= 80
, L = 50
H, T
J
= +150
o
C,
V
GE
= 10V, R
G
= 25
-
375
-
375
ns
Fall Time
t
FI
-
1200
-
1200
ns
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = W
OFF
x
Frequency)
W
OFF
-
1.2
-
1.2
mJ
Thermal Resistance Junction-to-
Case (IGBT)
R
JC
-
1.67
-
1.67
o
C/W
Typical Performance Curves
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
12
10
8
6
4
2
0
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
CE
= 10V
PULSE DURATION = 250
s
DUTY CYCLE < 2%
T
C
= -55
o
C
T
C
= +25
o
C
T
C
= +150
o
C
10
8
6
4
2
0
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%
T
C
= +25
o
C
V
GE
= 15V
V
GE
= 10V
V
GE
= 6.0V
V
GE
= 5.5V
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
3-3
HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT (TYPICAL)
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE (TYPICAL)
FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER
CURRENT (TYPICAL)
FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT
(TYPICAL)
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT (TYPICAL)
Typical Performance Curves
(Continued)
4
3
2
1
0
V
CE(ON)
, SA
TURA
TION V
O
L
T
A
GE (V)
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C
V
GE
= 10V
V
GE
= 15V
V
GE
= 10V
V
GE
= 15V
18
16
14
12
10
8
6
4
2
0
I
CE
, DC COLLECT
OR CURRENT (A)
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
1000
800
600
400
200
0
C, CAP
A
CIT
ANCE (pF)
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
CISS
COSS
CRSS
0.5
0.4
0.3
0.2
0.1
0.0
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
+150
o
C, V
CE
= 400V
L = 50
H
V
GE
= 15V, R
G
= 50
V
GE
= 10V, R
G
= 50
V
GE
= 15V, R
G
= 25
V
GE
= 10V, R
G
= 25
t
D(OFF)I
, TURN-OFF DELA
Y (
s)
2
1
0
t
FI
, F
ALL TIME (
s)
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, V
GE
= 10V
R
G
= 25
, L = 50
H
V
CE
= 400V
10
1.0
0.1
W
OFF
, TURN-OFF SWITCHING LOSS (mJ)
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, V
GE
= 10V
R
G
= 25
, L = 50
H
V
CE
= 400V
V
CE
= 200V
3-4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR
CURRENT AND VOLTAGE (TYPICAL)
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT
Test Circuit
FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
100
10
1
f
OP
, MAXIMUM OPERA
TING FREQ
UENCY (KHz)
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, T
C
= +100
o
C, V
GE
= 10V
R
G
= 25
, PT = 75W, L = 50
H
V
CE
= 200V
V
CE
= 400V
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
NOTE:
V
CE
, COLLECT
OR-EMITTER V
O
L
T
A
GE (V)
500
375
250
125
0
V
GE
, GA
TE-EMITTER V
O
L
T
A
GE (V)
10
5
0
V
CC
= BV
CES
V
CC
= BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
GATE-
EMITTER
VOLTAGE
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
s)
COLLECTOR-EMITTER VOLTAGE
R
L
= 100
I
G(REF)
= 0.33mA
V
GE
= 10V
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 50
H
V
CC
400V
+
R
L
-