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Электронный компонент: HGTD8P50G1

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1
HGTD8P50G1,
HGTD8P50G1S
8A, 500V P-Channel IGBTs
Package
JEDEC TO-251AA
JEDEC TO-252AA
Symbol
(FLANGE)
COLLECTOR
EMITTER
COLLECTOR
GATE
(FLANGE)
COLLECTOR
GATE
EMITTER
C
G
E
Features
8A, 500V
3.7V V
CE(SAT)
Typical Fall Time - 1800ns
High Input Impedance
T
J
= +150
o
C
Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high voltage, low on-dissipation applications such
as switching regulators and motor drives. This P- channel IGBT
can be paired with N-Channel IGBTs to form a complementary
power switch and it is ideal for half bridge circuit configurations.
These types can be operated directly from low power integrated
circuits.
The development type number for these devices is TA49015.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD8P50G1
TO-251AA
G8P50G
HGTD8P50G1S
TO-252AA
G8P50G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
HGTD8P50G1S9A.
March 1997
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTD8P50G1/G1S
UNITS
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
-500
V
Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
10
V
Collector Current Continuous
At T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
-12
-8
A
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
-18
A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching SOA at T
C
= +25
o
C, V
CL
= -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
No Snubber, Figure 17 - Circuit 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With 0.1
F Capacitor, Figure 17 - Circuit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-3
-18
A
A
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
66
W
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.53
W/
o
C
Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to +150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(0.125" from case for 5s)
+260
o
C
NOTE:
1. T
J
= 25
o
C, V
CL
= 350V, R
GE
= 25
,
Figure 17 - Circuit 2 (C
1
= 0.1
F)
File Number
3649.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
2
Specifications HGTD8P50G1, HGTD8P50G1S
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
BV
CES
I
CE
= -250
A
V
CL
= -600V
V
GE
= 0V
-500
-
-
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
EC
= 1mA
V
GE
= 0V
10
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
-250
A
V
CE
= 0.8 BV
CES
T
C
= +150
o
C
-
-
-1.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
CE
= -3.0A
V
GE
= -15V
T
C
= +25
o
C
-
-2.5
-2.9
V
T
C
= +150
o
C
-
-2.3
-2.8
V
I
CE
= I
C90
V
GE
= -15V
T
C
= +25
o
C
-
-3.0
-3.7
V
T
C
= +150
o
C
-
-3.3
-4.0
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
CE
= -1.0mA
V
CE
= V
GE
-4.5
-6.0
-7.5
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
100
nA
Gate-Emitter Plateau Voltage
V
GE(PL)
I
C
= 3A
V
CE
= 0.5 BV
CES
-
-7.0
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 3A,
V
CE
= 0.5 BV
CES
V
GE
= -15V
-
16
25
nC
V
GE
= -20V
-
22
30
nC
Current Turn-On Delay Time
t
D(ON)I
R
L
= 113
I
CE
= -3A,
V
GE
= -15V
V
CE
= -350V
R
G
= 25
T
J
= +150
o
C
Fig. 17, Circuit 1
-
45
-
ns
Current Rise Time
t
RI
-
85
-
ns
Current Turn-off Delay Time
t
D(OFF)I
L = 100
H
-
480
680
ns
Current Fall Time
t
FI
-
1800
2500
ns
Turn-Off Energy (Note 1)
E
OFF
-
0.8
-
mJ
Current Turn-Off Delay Time
t
D(OFF)I
L = 100
H
I
CE
= -8A,
V
GE
= -15V
V
CE
= -350V
R
G
= 25
T
J
= +150
o
C
Fig. 17, Circuit 2
C
1
= .022
F
-
100
200
ns
Current Fall Time
t
FI
-
3500
4000
ns
Turn-Off Energy (Note 1)
E
OFF
-
1.3
-
mJ
Latching Current
I
L
L = 100
H
V
GE
= -15V
R
G
= 25
T
J
= +25
o
C
V
CE
= -350V
Fig. 17, Circuit 1
-3
-
-
A
Thermal Resistance
R
JC
-
1.75
1.90
o
C/W
NOTE:
1. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTD8P50G1 and HGTD8P50G1S were tested per JEDEC
standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.
3
HGTD8P50G1, HGTD8P50G1S
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 4. COLLECTOR-EMITTER SATURATION VOLTAGE
FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT. (REFER TO
APPLICATION NOTES AN7254 AND AN7260)
PULSE DURATION = 250
s, DUTY CYCLE < 0.5%, V
CE
= -10V
0
-4
-8
-12
-16
-20
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
-4
-6
-8
-10
-12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
C
= +150
o
C
T
C
= -40
o
C
-14
T
C
= +25
o
C
PULSE DURATION = 250
s, DUTY CYCLE < 0.5%
-6.5V
-7.0V
-9.0V
-2
-4
-6
-8
-10
0
-20
-16
-12
-8
-4
0
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
-8.0V
V
GE
= -15V
-12V
-10V
25
50
75
100
125
150
-2
-4
-6
-8
-10
-12
-14
0
I
CE
, DC COLLECTOR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= -15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
-4
0
-8
-12
-16
-20
0
-1
-2
-3
-4
-5
-6
-7
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
PULSE DURATION = 250
s, DUTY CYCLE < 0.5%, V
GE
= -15V
T
C
= +150
o
C
T
C
= +25
o
C
T
C
= -40
o
C
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
0
-5
-10
-15
-20
-25
0
100
200
300
400
500
600
700
C
,
CAP
A
CIT
ANCE (pF)
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
0
-7.5
-15
V
GE
, GA
TE-EMITTER V
O
L
T
A
GE (V)
V
CE
,
COLLECT
OR-EMITTER V
O
L
T
A
GE (V)
0
-200
-400
GATE-EMITTER VOLTAGE
COLLECTOR-EMITTER VOLTAGE
T
J
= +25
o
C, V
GE
= -15V, I
G(REF)
= -0.391mA
V
CE
= -100V
V
CE
= -400V
V
CE
= -400V
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
s)
4
HGTD8P50G1, HGTD8P50G1S
FIGURE 7. SATURATION VOLTAGE AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-OFF DELAY AS A FUNCTION OF COLLECTOR-
EMITTER CURRENT
FIGURE 10. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT AND VOLTAGE
FIGURE 11. FALL TIME AS A FUNCTION OF COLLECTOR-
EMITTER CURRENT
FIGURE 12. LATCHING CURRENT AS A FUNCTION OF
SNUBBER CAPACITANCE
Typical Performance Curves
(Continued)
T
J
= +150
o
C
V
CE(SA
T)
, SA
TURA
TION V
O
L
T
A
GE
(V)
-1
-5
-10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
0
-2
-4
-6
-8
-10
-12
-14
V
GE
= -10V
V
GE
= -15V
T
J
= +150
o
C, R
G
= 25
,
L = 100
H
0.1
1.0
10
W
OFF
,
TURN-OFF SWITCHING LOSS (mJ)
-1
-2
-3
-4
-5
I
CE
, PEAK COLLECTOR-EMITTER CURRENT (A)
V
CE
= -350V, V
GE
= -15V
V
CE
= -200V, V
GE
= -15V
FIG. 17, CIRCUIT 1
R
GE
=
50
R
GE
= 25
T
J
= +150
o
C, V
CE
= -350V, V
GE
= -15V, L = 100
H
FIG. 17, CIRCUIT 1
0.1
0.5
1.0
t
D(OFF)I
,
TURN-OFF DELA
Y TIME (
s)
-1
-2
-3
-4
-5
I
CE
, PEAK COLLECTOR-EMITTER CURRENT (A)
f
MAX2
= (P
D
- P
C
)/E
OFF
f
MAX1
= 0.05/
t
D(OFF)I
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
JC
= 1.9
o
C/W
T
J
= +150
o
C, T
C
= +75
o
C, V
GE
= -15V, R
GE
= 25
, L = 100
H
f
MAX
,
OPERA
TING FREQ
UENCY (kHz)
10
100
50
-1
-5
-10
I
CE
, PEAK COLLECTOR-EMITTER CURRENT (A)
FIG. 17, CIRCUIT 1
V
CE
= -350V
V
CE
= -200V
V
CE
= -350V
FIG. 17, CIRCUIT 1
T
J
= +150
o
C, V
GE
= -15V, R
G
= 25
, L = 100
H
1
2
3
4
5
t
FI
,
F
ALL TIME (
s)
-1
-3
-4
-5
-2
I
CE
, COLLECTOR-EMITTER CURRENT (A)
FIG. 17, CIRCUIT 2
V
CE
= -350V
T
J
= 25
o
C, V
GE
= -15V, R
G
= 25
, L = 100
H
I
CE
,
PEAK COLLECT
OR-EMITTER CURRENT (A)
0
-10
-15
-20
-25
-5
C1, SNUBBER CAPACITANCE (
F)
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
5
HGTD8P50G1, HGTD8P50G1S
FIGURE 13. LATCHING CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 14. GATE THRESHOLD VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 16. LATCHING CURRENT AS A FUNCTION OF
COLLECTOR-EMITTER VOLTAGE
Test Circuits
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUITS
Typical Performance Curves
(Continued)
FIG. 17, CIRCUIT 1
V
CE
= -350V, V
GE
= -15V, R
G
= 25
, L = 100
H
I
CE
,
PEAK COLLECT
OR-EMITTER
-3
-4
-5
-6
-7
-50
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
CURRENT (A)
-40
0
40
80
120
160
V
TH
,
G
A
TE THRESHOLD V
O
L
T
A
GE (V)
4.5
5.5
6.0
6.5
5.0
T
C
, CASE TEMPERATURE (
o
C)
V
CE
= V
GE
, I
CE
= 1.0mA
t
1
, RECTANGULAR PULSE DURATION (s)
Z
JC
,
NORMALIZED THERMAL
RESPONSE (
o
C/W)
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
P
DS
t
1
t
2
NOTES:
1. DUTY FACTOR, D =
t
1
/
t
2
2.PEAK T
J
= (P
DS
x Z
JC
x R
JC
) + T
A
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
0
10
-1
10
-3
10
-2
0
200
100
300
400
500
0
3
6
9
12
15
I
CE
, PEAK COLLECT
OR-EMITTER
V
CE
, COLLECTOR-EMITTER (V)
T
C
= 25
o
C, V
GE
= -15V, R
G
= 25
, L = 100
H
FIG. 17, CIRCUIT 1
CURRENT (A)
R
G
= 25
L = 100
H
+
-
V
CC
= 350V
CIRCUIT 1
R
G
= 25
L = 100
H
+
-
C
1
V
CC
= 350V
D
1
D
1
=
GSI T
ran
Z
orb
CIRCUIT 2