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Электронный компонент: HGTG11N120CN

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1
File Number
4577.2
HGTG11N120CN, HGTP11N120CN,
HGT1S11N120CNS
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and
HGT1S11N120CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49291.
Symbol
Features
43A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 340ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Thermal Impedance SPICE Model
Temperature Compensating SABERTM Model
www.intersil.com
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG11N120CN
TO-247
G11N120CN
HGTP11N120CN
TO-220AB
11N120CN
HGT1S11N120CNS
TO-263AB
11N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S11N120CNS9A.
C
E
G
G
C
E
COLLECTOR
(BOTTOM SIDE
METAL)
G
COLLECTOR
E
(FLANGE)
C
G
COLLECTOR
E
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
SABERTM is a trademark of Analogy, Inc.
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2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG11N120CN
HGTP11N120CN
HGT1S11N120CNS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
43
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
22
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
80
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
55A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
298
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.38
W/
o
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
80
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, see Tech brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
260
o
C
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
Short Circuit Withstand Time (Note 3) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
15
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 20A, L = 400
H, T
J
= 25
o
C.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 10
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 125
o
C
-
250
-
A
T
C
= 150
o
C
-
-
3
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 11A,
V
GE
= 15V
T
C
= 25
o
C
-
2.1
2.4
V
T
C
= 150
o
C
-
2.8
3.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 90
A, V
CE
= V
GE
6.0
6.8
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 10
,
V
GE
= 15V,
L = 400
H, V
CE(PK)
= 1200V
55
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 11A, V
CE
= 0.5 BV
CES
-
10.4
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 11A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
100
120
nC
V
GE
= 20V
-
130
150
nC
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
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3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 11A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 2mH
Test Circuit (Figure 18)
-
23
26
ns
Current Rise Time
t
rI
-
12
16
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
180
240
ns
Current Fall Time
t
fI
-
190
230
ns
Turn-On Energy (Note 4)
E
ON1
-
0.4
0.5
mJ
Turn-On Energy (Note 4)
E
ON2
-
0.95
1.3
mJ
Turn-Off Energy (Note 5)
E
OFF
-
1.3
1.6
mJ
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 11A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 2mH
Test Circuit (Figure 18)
-
21
24
ns
Current Rise Time
t
rI
-
12
16
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
210
280
ns
Current Fall Time
t
fI
-
340
400
ns
Turn-On Energy (Note 4)
E
ON1
-
0.45
0.6
mJ
Turn-On Energy (Note 4)
E
ON2
-
1.9
2.5
mJ
Turn-Off Energy (Note 5)
E
OFF
-
2.1
2.5
mJ
Thermal Resistance Junction To Case
R
JC
-
-
0.42
o
C/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
0
40
10
25
75
100
125
150
30
35
25
15
5
V
GE
= 15V
20
45
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
40
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
10
20
600
800
400
200
1000
1200
0
50
60
30
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 400
H
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
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4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 150
o
C, R
G
= 10
, L = 2mH, V
CE
= 960V
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
2
5
10
20
10
50
5
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.42
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
T
C
V
GE
110
o
C
12V
15V
15V
75
o
C
110
o
C
75
o
C
12V
200
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
12
13
14
15
16
5
10
15
20
50
100
150
250
t
SC
I
SC
25
200
V
CE
= 840V, R
G
= 10
, T
J
= 125
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
10
20
6
8
30
50
250
s PULSE TEST
DUTY CYCLE < 0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
40
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
40
0
2
4
6
8
10
50
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
250
s PULSE TEST
E
ON2
, TURN-ON ENERGY LOSS (mJ)
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
3
2
5
0
5
10
0
15
20
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 10
, L = 2mH, V
CE
= 960V
1
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
2.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
0
5
0
0.5
1.5
1.0
2.0
3.0
3.5
10
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
15
20
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
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5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL vs COLLECTOR TO EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y TIME
(ns)
0
15
20
25
30
35
5
40
15
20
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
10
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
0
10
30
20
15
0
10
5
20
40
50
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
0
250
5
100
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
500
350
400
20
15
R
G
= 10
, L = 2mH, V
CE
= 960V
10
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
150
450
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
0
100
300
400
5
500
700
20
15
R
G
= 10
, L = 2mH, V
CE
= 960V
200
600
10
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
40
13
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
60
80
14
15
100
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
250
s PULSE TEST
DUTY CYCLE < 0.5%, V
CE
= 20V
7
20
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
5
20
0
0
60
20
80
V
CE
= 800V
I
G(REF)
= 1mA, R
L
= 54.5
, T
C
= 25
o
C
V
CE
= 1200V
10
15
120
V
CE
= 400V
100
40
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS