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Электронный компонент: HGTG11N120CND

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1
File Number
4580.2
HGTG11N120CND
43A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG11N120CND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The IGBT
used is the development type TA49291. The Diode used is
the development type TA49189.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49303.
Features
43A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 340ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance SPICE Model
www.intersil.com
Packaging
JEDEC STYLE TO-247
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG11N120CND
TO-247
11N120CND
NOTE: When ordering, use the entire part number.
G
C
E
E
G
C
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG11N120CND
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
43
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
22
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
80
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
55A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
298
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.38
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
15
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 10
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 125
o
C
-
300
-
A
T
C
= 150
o
C
-
-
3.5
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 11A,
V
GE
= 15V
T
C
= 25
o
C
-
2.1
2.4
V
T
C
= 150
o
C
-
2.9
3.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 90
A, V
CE
= V
GE
6.0
6.8
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 10
,
V
GE
= 15V,
L = 400
H, V
CE(PK)
= 1200V
55
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 11A, V
CE
= 0.5 BV
CES
-
10.4
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 11A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
100
120
nC
V
GE
= 20V
-
130
150
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 11A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 10
,
L = 2mH,
Test Circuit (Figure 20)
-
23
26
ns
Current Rise Time
t
rI
-
12
16
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
180
240
ns
Current Fall Time
t
fI
-
190
220
ns
Turn-On Energy
E
ON
-
0.95
1.3
mJ
Turn-Off Energy (Note 3)
E
OFF
-
1.3
1.6
mJ
HGTG11N120CND
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C,
I
CE
= 11A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 10
,
L = 2mH,
Test Circuit (Figure 20)
-
21
24
ns
Current Rise Time
t
rI
-
12
16
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
210
280
ns
Current Fall Time
t
fI
-
360
400
ns
Turn-On Energy
E
ON
-
1.9
2.5
mJ
Turn-Off Energy (Note 3)
E
OFF
-
2.1
2.5
mJ
Diode Forward Voltage
V
EC
I
EC
= 11A
-
2.6
3.2
V
Diode Reverse Recovery Time
t
rr
I
EC
= 11A, dl
EC
/dt = 200A/
s
-
60
70
ns
I
EC
= 1A, dl
EC
/dt = 200A/
s
-
32
40
ns
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
0.42
o
C/W
Diode
-
-
1.25
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
0
40
10
25
75
100
125
150
30
35
25
15
5
V
GE
= 15V
20
45
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
40
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
10
20
600
800
400
200
1000
1200
0
50
60
30
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 400
H
HGTG11N120CND
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 150
o
C, R
G
= 10
, L = 2mH, V
CE
= 960V
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
2
5
10
20
10
50
5
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.42
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
200
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
T
C
V
GE
110
o
C
12V
15V
15V
75
o
C
110
o
C
75
o
C
12V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
12
13
14
15
16
5
10
15
20
50
100
150
250
t
SC
I
SC
25
200
V
CE
= 840V, R
G
= 10
, T
J
= 125
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
10
20
6
8
30
50
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
40
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
40
0
2
4
6
8
10
50
0
T
C
= -55
o
C
T
C
= 25
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
C
= 150
o
C
E
ON
, TURN-ON ENERGY LOSS (mJ)
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
3
2
5
0
5
10
0
15
20
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 10
, L = 2mH, V
CE
= 960V
1
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
2.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
0
5
0
0.5
1.5
1.0
2.0
3.0
3.5
10
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
15
20
HGTG11N120CND
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y TIME
(ns)
0
15
20
25
30
35
5
40
15
20
R
G
= 10
, L = 2mH, V
CE
= 960V
10
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
0
10
30
20
15
0
10
5
20
40
50
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
0
250
5
100
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
500
350
400
20
15
R
G
= 10
, L = 2mH, V
CE
= 960V
10
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
150
450
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
0
100
300
400
5
500
700
20
15
R
G
= 10
, L = 2mH, V
CE
= 960V
200
600
10
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
40
13
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
60
80
14
15
100
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
CE
= 20V
7
20
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
5
20
0
0
60
20
80
V
CE
= 800V
I
G(REF)
= 1mA, R
L
= 54.5
, T
C
= 25
o
C
V
CE
= 1200V
10
15
120
V
CE
= 400V
100
40
HGTG11N120CND