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Электронный компонент: HGTG15N120C3

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HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3, HGT1S15N120C3S
35A, 1200V, UFS Series N-Channel IGBTs
Features
35A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . 350ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Formerly Developmental Type TA49145.
Description
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3
and HGT1S15N120C3S are MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar tran-
sistor. The much lower on-state voltage drop varies only moder-
ately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Symbol
Packaging
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG15N120C3
TO-247
15N120C3
HGTP15N120C3
TO-220AB
15N120C3
HGT1S15N120C3
TO-262AA
15N120C3
HGT1S15N120C3S
TO-263AB
15N120C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel; i.e.,
HGT1S15N120C3S9A.
C
E
G
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-262AA
JEDEC TO-263AB
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
A
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
A
M
EMITTER
GATE
COLLECTOR
(FLANGE)
June 1997
File Number
4244.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3S, HGT1S15N120C3S
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
35
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
15
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
120
A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 14 . . . . . . . . . . . . . . SSOA
15A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
164
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/
o
C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . t
SC
6
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . t
SC
25
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 720V, T
J
= 125
o
C, R
GE
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
25
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 150
o
C
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
2.3
3.5
V
T
C
= 150
o
C
-
2.4
3.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
4.0
5.6
7.5
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
100
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 10
V
GE
= 15V, L = 1mH
V
CE(PK)
= 960V
40
-
-
A
V
CE(PK)
= 1200V
15
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8.8
-
V
On-State Gate Charge
Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
ES
V
GE
= 15V
-
75
100
nC
V
GE
= 20V
-
100
130
nC
Current Turn-On Delay Time
t
d(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 1mH
-
17
-
ns
Current Rise Time
t
rI
-
25
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
470
550
ns
Current Fall Time
t
fI
-
350
400
ns
Turn-On Energy
E
ON
-
2100
-
J
Turn-Off Energy (Note 3)
E
OFF
-
4700
-
J
Thermal Resistance
R
JC
-
-
0.76
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses
include losses due to diode recovery.
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
10
14
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
80
0
100
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250
s
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
12
8
20
40
60
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
80
0
10
20
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
DUTY CYCLE <0.5%, T
C
= 25
o
C
PULSE DURATION = 250
s
V
GE
= 15V
12V
10V
9V
8.5V
8V
60
40
2
6
8
4
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
6
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
25
10
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
4
2
8
0
5
15
20
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
10
100
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
40
60
80
0
0
2
6
8
25
50
75
100
125
150
0
5
10
15
20
25
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
30
35
I
SC
, PEAK SHOR
T CIRCUIT CURRENT(A)
25
75
125
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
150
100
50
I
SC
t
SC
15
30
35
V
CE
= 720V, R
GE
= 25
, T
J
= 125
o
C
25
20
10
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
4
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d(ON)I
, TURN-ON DELA
Y TIME (ns)
10
20
30
5
10
15
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
25
50
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME (ns)
400
300
100
5
10
15
20
25
200
600
500
30
V
GE
= 10V or 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
TURN-ON RISE TIME
(ns)
10
100
5
10
15
20
25
V
GE
= 15V
V
GE
= 10V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
1
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
ALL TIME
(ns)
5
10
15
20
25
30
100
300
200
400
500
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
5
10
15
20
E
ON
, TURN-ON ENERGY LOSS
(mJ)
25
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
V
GE
= 10V
V
GE
= 15V
2
4
6
8
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS
(mJ)
5
10
15
20
25
30
2
4
6
8
10
12
0
14
16
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
V
GE
= 10V
V
GE
= 15V
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
5
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR
TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
5
10
20
25
10
1
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
(DUTY FACTOR = 50%)
R
JC
= 0.76
o
C/W
V
GE
= 15V
20
30
100
V
GE
= 10V
T
J
= 150
o
C, T
C
= 75
o
C, R
G
= 10
L = 1mH, V
CE(PK)
= 960V
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
200
400
600
800
1000
1200
0
10
20
30
40
50
T
J
= 150
o
C, V
GE
= 15V, R
G
= 10
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
500
1000
1500
2000
2500
C, CAP
A
CIT
ANCE (pF)
C
IES
C
OES
3000
3500
4000
FREQUENCY = 1MHz
V
GE
, GA
TE T
O
AEMITTER V
O
L
T
A
GE (V) 12
8
6
2
0
40
80
160
120
14
4
10
0
V
CE
= 400V
V
CE
= 1200V
V
CE
= 800V
I
G(REF)
= 4.21mA, R
L
= 80
, T
C
= 25
o
C
Q
g
, GATE CHARGE (nC)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
SINGLE PULSE
Z
JC
,
NORMALIZED THERMAL IMPED
ANCE
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S