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Электронный компонент: HGTG15N120C3D

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1
May 1997
HGTG15N120C3D
35A, 1200V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
35A, 1200V at T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time at T
J
= 150
o
C . . . . . . . . . . . . . . 350ns
Short Circuit Rating
Low Conduction Loss
Formerly Developmental Type TA49133.
Description
The HGTG15N120C3D is a MOS gated high voltage switch-
ing device combining the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop var-
ies only moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
The diode used in anti-Parallel with the IGBT is the same as
the RHRP15120. The IGBT was formerly development type
TA49145.
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG15N120C3D
TO-247
15N120C3D
NOTE: When ordering, use the entire part number.
C
E
G
Packaging
JEDEC STYLE TO-247
INTERSIL CORPRATION's IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
E
C
G
COLLECTOR
(FLANGE)
File Number
4267.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG15N120C3D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
35
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
15
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
120
A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA
15A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
164
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
6
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
25
s
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
GE
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
2.3
3.5
V
T
C
= 150
o
C
-
2.4
3.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
4.0
5.6
7.5
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
100
nA
Switching SOA
SSOA
T
J
= 150
o
C
R
G
= 10
V
GE
= 15V
L = 1mH
V
CE(PK)
= 960V
40
-
-
A
V
CE(PK)
= 1200V
15
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8.8
-
V
On-State Gate Charge
Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
75
100
nC
V
GE
= 20V
-
100
130
nC
Current Turn-On Delay Time
t
d(ON)I
T
J
= 150
o
C,
I
CE
= I
C110,
V
CE(PK)
= 0.8 BV
CES,
V
GE
= 15V,
R
G
= 10
,
L = 1mH
-
17
-
ns
Current Rise Time
t
rI
-
25
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
470
550
ns
Current Fall Time
t
fI
-
350
400
ns
Turn-On Energy (Note 3)
E
ON
-
2100
-
J
Turn-Off Energy (Note 3)
E
OFF
-
4700
-
J
Diode Forward Voltage
V
EC
I
EC
= 15A
-
-
3.2
V
Diode Reverse Recovery Time
t
rr
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
-
65
ns
I
EC
= 15A, dI
EC
/dt = 200A/
s
-
-
75
ns
Thermal Resistance
R
JC
IGBT
-
-
0.76
o
C/W
Diode
-
-
1.5
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTG15N120C3D was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On Energy loss (E
ON
) includes losses due to the diode recovery.
HGTG15N120C3D
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
10
14
6
80
0
100
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250
s
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
12
8
20
40
60
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
80
0
4
10
20
0
DUTY CYCLE <0.5%, T
C
= 25
o
C
PULSE DURATION = 250
s
V
GE
= 15V
12V
10V
9V
8.5V
8V
60
40
2
6
8
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
6
10
25
10
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
4
2
8
0
5
15
20
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
4
20
10
100
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
40
60
80
0
0
2
6
8
HGTG15N120C3D
4
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
0
5
10
15
20
25
V
GE
= 15V
30
35
I
SC
, PEAK SHOR
T CIRCUIT CURRENT
(A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
V
GE
, GATE TO EMITTER VOLTAGE (V)
25
75
125
10
11
12
14
15
13
150
100
50
I
SC
t
SC
15
30
35
V
CE
= 720V, R
GE
= 25
, T
J
= 125
o
C
25
20
10
t
d(ON)I
, TURN-ON DELA
Y TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
20
30
5
10
15
20
100
25
50
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME (ns)
400
300
100
5
10
15
20
25
200
600
500
30
V
GE
= 10V or 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
HGTG15N120C3D
5
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
TURN-ON RISE TIME
(ns)
10
100
5
10
15
20
25
V
GE
= 15V
V
GE
= 10V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
1
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
ALL TIME
(ns)
5
10
15
20
25
30
100
300
200
400
500
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
ON
, TURN-ON ENERGY LOSS
(mJ)
0
5
10
15
20
25
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
V
GE
= 10V
V
GE
= 15V
2
4
6
8
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS
(mJ)
5
10
15
20
25
30
2
4
6
8
10
12
0
14
16
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 960V
V
GE
= 10V
V
GE
= 15V
HGTG15N120C3D