3-71
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HGTG20N50C1D
20A, 500V N-Channel IGBT
with Anti-Parallel Ultrafast Diode
Features
20A, 500V
Latch Free Operation
Typical Fall Time < 500ns
High Input Impedance
Low Conduction Loss
With Anti-Parallel Diode
t
RR
< 60ns
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
o
C and +150
o
C. The diode used in
parallel with the IGBT is an ultrafast (t
RR
< 60ns) with soft
recovery characteristic.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contractors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG20N50C1D
TO-247
G20N50C1D
NOTE: When ordering, use the entire part number.
April 1995
Package
JEDEC STYLE TO-247
Terminal Diagram
COLLECTOR
GATE
COLLECTOR
EMITTER
(BOTTOM SIDE
METAL)
C
G
E
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG20N50C1D
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
500
V
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
500
V
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
26
A
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C90
20
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
35
A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Diode Forward Current at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F25
26
A
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F90
20
A
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75
W
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.8
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to +150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
NOTE: 1. T
J
= +150
o
C, Minimum R
GE
= 25
without latch
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
File Number
2796.3
3-72
Specifications HGTG20N50C1D
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 1mA, V
GE
= 0V
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2
4.5
V
Zero Gate Voltage Collector Current
I
CES
V
CE
= 500V
-
250
A
T
C
= +125
o
C, V
CE
= 500V
-
1000
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
20V, V
CE
= 0V
-
100
nA
Collector-Emitter On-Voltage
V
CE(SAT)
I
C
= 20A, V
GE
= 10V
-
2.5
V
I
C
= 35A, V
GE
= 20V
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A, V
CE
= 10V
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 10A, V
CE
= 10V
-
33 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 20A, V
CE(CLP)
= 300V, L = 25
H,
T
J
= +100
o
C, V
GE
= 10V, R
G
= 25
-
50
ns
Rise Time
t
RI
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
ns
Fall Time
t
FI
400 (Typ)
500
ns
Turn-Off Energy Loss Per Cycle (Off Switching
Dissipation = W
OFF
x Frequency)
W
OFF
I
C
= 20A, V
CE(CLP)
= 300V, L = 25
H,
T
J
= +100
o
C, V
GE
= 10V, R
G
= 25
1070 (Typ)
J
Thermal Resistance Junction-to-Case (IGBT)
R
JC
-
1.25
o
C/W
Thermal Resistance of Diode
R
JC
-
1.5
ns
Diode Forward Voltage
V
EC
I
EC
= 20A
-
1.8
V
Diode Reverse Recovery Time
t
RR
I
EC
= 20A, di
EC
/dt = 100A/
s
-
60
ns
Typical Performance Curves
FIGURE 1. POWER DISSIPATION vs TEMPERATURE
DERATING CURVE
FIGURE 2. TYPICAL NORMALIZED GATE-THRESHOLD
VOLTAGE vs JUNCTION TEMPERATURE
100
80
60
40
20
RA
TED P
O
WER DI
SS
IP
A
T
I
O
N
(
%
)
0
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
+150
1.3
1.2
1.1
1.0
0.9
0.8
0.7
NORMALIZED GA
TE THRESHOLD VOL
T
AGE (V)
-50
0
+50
+100
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GE
= V
CE
, I
C
= 1mA
3-73
HGTG20N50C1D
FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 4. TYPICAL SATURATION CHARACTERISTICS
FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
FIGURE 6. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 7. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 8. TYPICAL TURN-OFF DELAY TIME
Typical Performance Curves
(Continued)
35
30
25
20
15
10
5
I
CE
, COLLECT
OR CURRENT (A)
0
2.5
5.0
7.5
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
V
CE
= 10V, PULSE TEST
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
-40
o
C
+25
o
C
+125
o
C
35
30
25
20
15
10
5
0
1
2
3
4
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
I
CE
, COLLECT
OR CURRENT (A)
T
C
= +25
o
C
V
GE
= 20V
V
GE
= 10V
V
GE
= 8V
V
GE
= 7V
V
GE
= 6V
V
GE
= 5V
V
GE
= 4V
35
30
25
20
15
10
5
I
CE
, COLLECT
OR CURRENT (A)
0
1
2
3
4
V
CE
, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
V
CE
= 10V, PULSE TEST
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
2700
2250
1800
1350
900
450
C, CAP
ACIT
ANCE (pF)
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 0.1MHz
CISS
COSS
CRSS
3.00
2.75
2.50
2.25
2.00
1.75
1.50
V
CE(ON)
, COLLECT
OR-EMITTER VOL
T
AGE (V)
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
C
= 10A, V
GE
= 15V
I
C
= 10A, V
GE
= 10V
I
C
= 20A, V
GE
= 15V
I
C
= 20A, V
GE
= 10V
400
300
200
100
0
t
D(OFF)I
, SWITCHING TIME (ns)
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
C
= 20A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
H, R
G
= 25
3-74
HGTG20N50C1D
FIGURE 9. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 10. TYPICAL FALL TIME (I
C
= 10A)
FIGURE 11. TYPICAL FALL TIME (I
C
= 20A)
FIGURE 12. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
FIGURE 14. TYPICAL t
RR
, t
A
, t
B
vs FORWARD CURRENT
Typical Performance Curves
(Continued)
V
GE
V
CE
W
OFF
=
I
C
*
V
CE
dt
I
C
800
700
600
500
400
300
200
100
0
t
FI
, F
ALL TIME (ns)
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
C
= 10A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
H, R
G
= 25
800
700
600
500
400
300
200
100
0
t
FI
, F
ALL TIME (ns)
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
C
= 20A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
H, R
G
= 25
800
700
600
500
400
300
200
100
0
W
OFF
, TURN OFF ENERGY (mJ)
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
H, R
G
= 25
900
1000
GATE
EMITTER
VOLTAGE
V
CC
= BV
CES
500
375
250
125
0
10
8
6
4
2
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
s)
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (V)
V
GE
, GA
TE-EMITTER VOL
T
AGE (V)
NOTE: For Turn-Off gate currents in excess of 3mA. V
CE
Turn-Off
is not accurately represented by this normalization.
R
L
= 25
I
G
(REF) = 0.76mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
V
CC
= 0.25 BV
CES
80
70
60
50
40
30
20
10
0
t
,
RECOVER
Y TIMES (ns)
1
10
100
I
EC
, EMITTER-COLLECTOR CURRENT (A)
t
RR
t
A
t
B
3-75
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTG20N50C1D
FIGURE 15. FORWARD VOLTAGE vs FORWARD CURRENT CHARACTERISTIC
Test Circuit
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
100
10
1.0
0.1
0.01
I
EC
, EMITTER-COLLECT
OR CURRENT (A)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
EC
, EMITTER-COLLECTOR VOLTAGE (V)
T
J
= +150
o
C
T
J
= +100
o
C
T
J
= +25
o
C
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 25
H
V
CE
(CLP) =
R
L
= 4
300V
80V
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