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Электронный компонент: HGTG30N60A4D

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1
File Number
4830
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
HGTG30N60A4D
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. The
IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49345.
Symbol
Features
>100kHz Operation At 390V, 30A
200kHz Operation At 390V, 18A
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . . 60ns at T
J
= 125
o
C
Low Conduction Loss
Temperature Compensating SABER Model
www.intersil.com
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60A4D
TO-247
30N60A4D
NOTE:
When ordering, use the entire part number.
C
E
G
COLLECTOR
(FLANGE)
C
E
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG30N60A4D,
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
75
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
60
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
240
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
150A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
463
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.7
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 600V
T
J
= 25
o
C
-
-
250
A
T
J
= 125
o
C
-
-
2.8
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 30A,
V
GE
= 15V
T
J
= 25
o
C
-
1.8
2.6
V
T
J
= 125
o
C
-
1.6
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= 600V
4.5
5.2
7.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V,
L = 100
H, V
CE
= 600V
150
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 30A, V
CE
= 300V
-
8.5
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 30A,
V
CE
= 300V
V
GE
= 15V
-
225
270
nC
V
GE
= 20V
-
300
360
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 30A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
,
L = 200
H,
Test Circuit (Figure 24)
-
25
-
ns
Current Rise Time
t
rI
-
12
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
150
-
ns
Current Fall Time
t
fI
-
38
-
ns
Turn-On Energy (Note 2)
E
ON1
-
280
-
J
Turn-On Energy (Note 2)
E
ON2
-
600
-
J
Turn-Off Energy (Note 3)
E
OFF
-
240
350
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 30A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 3
,
L = 200
H,
Test Circuit (Figure 24)
-
24
-
ns
Current Rise Time
t
rI
-
11
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
180
200
ns
Current Fall Time
t
fI
-
58
70
ns
Turn-On Energy (Note 2)
E
ON1
-
280
-
J
Turn-On Energy (Note 2)
E
ON2
-
1000
1200
J
Turn-Off Energy (Note 3)
E
OFF
-
450
750
J
Diode Forward Voltage
V
EC
I
EC
= 30A
-
2.2
2.5
V
Diode Reverse Recovery Time
t
rr
I
EC
= 30A, dI
EC
/dt = 200A/
s
-
40
55
ns
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
30
42
ns
HGTG30N60A4D
3
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
0.27
o
C/W
Diode
-
-
0.65
o
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
10
0
40
20
30
25
75
100
125
150
60
60
V
GE
= 15V
70
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
300
400
200
100
500
600
0
100
150
50
200
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 500
H
T
C
V
GE
15V
75
o
C
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
300
60
10
30
500
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
J
= 125
o
C, R
G
= 3
, L = 200
H, V
CE
= 390V
100
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
10
11
12
15
10
16
300
500
900
t
SC
I
SC
800
13
14
4
6
8
12
14
18
200
400
600
700
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
HGTG30N60A4D
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
10
20
1.5
2.0
2.5
40
30
T
J
= 150
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
GE
= 12V
50
T
J
= 25
o
C
0.5
T
J
= 125
o
C
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
10
20
40
30
50
0
1.0
1.5
2.0
2.5
0.5
E
ON2
, TURN-ON ENERGY LOSS (
J)
1000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
500
1500
0
3500
10
20
30
40
50
60
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 200
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
0
2500
2000
3000
1000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (
J)
0
600
200
800
1200
1400
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
400
R
G
= 3
, L = 200
H, V
CE
= 390V
10
20
30
40
50
60
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
,
TURN-ON DELA
Y TIME
(ns)
20
22
24
26
28
34
10
20
30
40
50
60
0
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
R
G
= 3
, L = 200
H, V
CE
= 390V
32
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
0
40
20
100
80
60
R
G
= 3
, L = 200
H, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 15V, V
GE
= 12V
20
10
30
40
50
60
0
T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C, V
GE
= 15V
HGTG30N60A4D
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified (Continued)
160
120
140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
220
200
180
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 3
, L = 200
H, V
CE
= 390V
20
10
30
40
50
60
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
20
30
40
R
G
= 3
, L = 200
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V OR 15V
50
70
20
10
30
40
50
60
0
T
J
= 125
o
C, V
GE
= 12V OR 15V
60
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
50
100
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
300
350
6
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
250
200
T
J
= 25
o
C
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
2.5
12.5
0
7.5
I
G(REF)
= 1mA, R
L
= 15
, T
J
= 25
o
C
V
CE
= 200V
5.0
10.0
15.0
V
CE
= 600V
50
100
150
200
250
0
V
CE
= 400V
I
CE
= 15A
0
2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
3
125
25
150
5
E
TOT
A
L
, T
O
T
AL SWITCHING ENERGY LOSS (mJ)
R
G
= 3
, L = 200
H, V
CE
= 390V, V
GE
= 15V
4
I
CE
= 60A
I
CE
= 30A
1
E
TOTAL
= E
ON2
+ E
OFF
0
10
100
R
G
, GATE RESISTANCE (
)
16
3
300
E
TOT
A
L
, T
O
T
AL SWITCHING ENERGY LOSS (mJ)
20
T
J
= 125
o
C, L = 200
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 15A
I
CE
= 30A
I
CE
= 60A
12
8
4
HGTG30N60A4D