3-61
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
HGTP15N40C1, 40E1, 50C1, 50E1,
HGTH20N40C1, 40E1, 50C1, 50E1
15A, 20A,
400V and 500V N-Channel IGBTs
Features
15A and 20A, 400V and 500V
V
CE(ON)
2.5V
T
FI
1
s, 0.5
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
No Anti-Parallel Diode
Applications
Power Supplies
Motor Drives
Protection Circuits
Description
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1
TO-218AC
G20N40C1
HGTH20N40E1
TO-218AC
G20N40E1
HGTH20N50C1
TO-218AC
G20N50C1
HGTH20N50E1
TO-218AC
G20N50E1
HGTP15N40C1
TO-220AB
G15N40C1
HGTP15N40E1
TO-220AB
G15N40E1
HGTP15N50C1
TO-220AB
G15N50C1
HGTP15N50E1
TO-220AB
G15N50E1
NOTE: When ordering, use the entire part number.
April 1995
Packages
HGTH-TYPES JEDEC TO-218AC
HGTP-TYPES JEDEC TO-220AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
GATE
COLLECTOR
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
GATE
COLLECTOR
EMITTER
C
E
G
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTH20N40C1
HGTH20N40E1
HGTH20N50C1
HGTH20N50E1
HGTP15N40C1
HGTP15N40E1
HGTP15N50C1
HGTP15N50E1
UNITS
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V
CES
400
500
400
500
V
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . V
CGR
400
500
400
500
V
Reverse Collector-Emitter Voltage . . . . . . . . . . . . V
CES
(rev.)
-5
-5
-5
-5
V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
20
20
20
20
V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I
C
20
20
15
15
A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
35
35
35
35
A
Power Dissipation at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . P
D
100
100
75
75
W
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . .
0.8
0.8
0.6
0.6
W/
o
C
Operating and Storage Junction Temperature Range . . . T
J
, T
STG
-55 to +150
-55 to +150
-55 to +150
-55 to +150
o
C
File Number
2174.3
3-62
Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTH20N40C1, E1,
HGTP15N40C1, E1
HGTH20N50C1, E1,
HGTP15N50C1, E1
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown
Voltage
BV
CES
I
C
= 1mA, V
GE
= 0
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2.0
4.5
2.0
4.5
V
Zero-Gate Voltage Collector
Current
I
CES
V
CE
= 400V, T
C
= +25
o
C
-
250
-
-
A
V
CE
= 500V, T
C
= +25
o
C
-
-
-
250
A
V
CE
= 400V, T
C
= +125
o
C
-
1000
-
-
A
V
CE
= 500V, T
C
= +125
o
C
-
-
-
1000
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
20V, V
CE
= 0
-
100
-
100
nA
Reverse Collector-Emitter
Leakage Current
I
CE
R
GE
= 0
, V
EC
= 5V
-
-5
-
-5
mA
Collector-Emitter on Voltage
V
CE(ON)
I
C
= 20A, V
GE
= 10V
-
2.5
-
2.5
V
I
C
= 35A, V
GE
= 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A, V
CE
= 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 10A, V
CE
= 10V
-
33 (Typ)
-
33 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 20A, V
CE(CLP)
= 300V,
L = 25
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25
-
50
-
50
ns
Rise Time
t
RI
-
50
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
-
400
ns
Fall Time
t
FI
40E1, 50E1
680 (Typ)
1000
680 (Typ)
1000
ns
40C1, 50C1
400
500
400
500
ns
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
W
OFF
x Frequency)
W
OFF
I
C
= 10A, V
CE(CLP)
= 300V,
L = 25
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25
40E1, 50E1
1810 (Typ)
J
40C1, 50C1
1070 (Typ)
J
Thermal Resistance
Junction-to-Case
R
JC
HGTH, HGTM
-
1.25
-
1.25
o
C/W
HGTP
-
1.67
-
1.67
o
C/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
3-63
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. R
G
= 25
,
V
GE
= 0V ARE THE MIN. ALLOWABLE VALUES
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING
CURVE
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
40
35
30
25
20
15
10
5
0
-75
-50
-25
0
+25
+50
+75 +100 +125 +150 +175
I
CE
, COLLECT
OR CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GE
= 10V, R
GEN
= R
GS
= 50
100
80
60
40
20
0
+25
+50
+75
+100
+125
+150
RA
TED POWER DISSIP
A
TION (%)
T
C
, CASE TEMPERATURE (
o
C)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
NORMALIZED GA
TE THRESHOLD VOL
T
AGE
T
C
, JUNCTION TEMPERATURE (
o
C)
V
GE
= V
CE
, I
C
= 1mA
35
30
25
20
15
10
5
0
2.5
5.0
7.5
10.0
I
CE
, COLLECT
OR CURRENT (A)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
CE
= 10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX.
-40
o
C
+25
o
C
+125
o
C
0
35
30
25
20
15
10
5
0
1
2
3
4
5
I
CE
, COLLECT
OR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
= 20V
V
GE
= 10V
V
GE
= 8V
V
GE
= 7V
V
GE
= 6V
V
GE
= 5V
V
GE
= 4V
T
C
= +25
o
C
0
35
30
25
20
15
10
5
0
1
2
3
4
I
CE
, COLLECT
OR CURRENT (A)
V
CE(ON)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
GE
= 10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX.
+25
o
C
0
3-64
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 11. TYPICAL FALL TIME (I
C
= 10A)
FIGURE 12. TYPICAL FALL TIME (I
C
= 20A)
Typical Performance Curves
(Continued)
2250
1800
1350
900
450
0
C, CAP
ACIT
ANCE (pF)
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
CISS
COSS
CRSS
2700
3.00
2.75
2.50
2.25
2.00
1.75
1.50
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
CE(ON)
, COLLECT
OR-EMITTER ON VOL
T
AGE (V)
I
C
= 10A, V
GE
= 15V
I
C
= 10A, V
GE
= 10V
I
C
= 20A, V
GE
= 15V
I
C
= 20A, V
GE
= 10V
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
t
D(OFF)I
, SWITCHING TIME (ns)
I
C
= 20A, V
GE
= 10V, V
CL
= 300V
L = 25
H, R
G
= 25
V
GE
V
CE
I
C
W
OFF
=
I
C
*
V
CE
dt
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
t
FI
, SWITCHING TIME (ns)
I
C
= 10A, V
GE
= 10V, V
CL
= 300V
L = 25
H, R
G
= 25
40C1/50C1
40E1/50E1
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
t
FI
, SWITCHING TIME (ns)
I
C
= 20A, V
GE
= 10V, V
CL
= 300V
L = 25
H, R
G
= 25
40C1/50C1
40E1/50E1
3-65
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT. (REFER TO APPLICA-
TION NOTES AN7254 AND AN7260 ON THE USE
OF NORMALIZED SWITCHING WAVEFORMS)
Test Circuit
FIGURE 15. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
900
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
W
OFF
, TURN-OFF ENERGY LOSS (
J)
T
J
, JUNCTION TEMPERATURE (
o
C)
10A, 40C1/50C1
10A, 40E1/50E1
20A, 40C1/50C1
20A, 40E1/50E1
V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
H, R
G
= 25
500
375
250
125
0
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (V)
V
GE
, GA
TE-EMITTER VOL
T
AGE (V)
10
4
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
s)
GATE-
EMITTER
VOLTAGE
R
L
= 25
I
G(REF)
= 0.76mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
V
CC
= 0.25BV
CES
V
CC
= BV
CES
8
6
2
BV
CES
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. V
CE
TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 25
H
V
CE(CLP)
=
R
L
= 4
300V
V
CC
80V
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