3-20
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
Features
10A, 400V and 500V
V
CE(ON)
: 2.5V Max.
T
FALL
: 1
s, 0.5
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Anti-Parallel Diode
Applications
Power Supplies
Motor Drives
Protective Circuits
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,
and HGTP10N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching reg-
ulators and motor drivers. They feature a discrete anti-parallel
diode that shunts current around the IGBT in the reverse
direction without introducing carriers into the depletion region.
These types can be operated directly from low power inte-
grated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40C1D
TO-220AB
10N40C1D
HGTP10N40E1D
TO-220AB
10N40E1D
HGTP10N50C1D
TO-220AB
10N50C1D
HGTP10N50E1D
TO-220AB
10N50E1D
NOTE: When ordering, use the entire part number.
April 1995
Package
JEDEC TO-220AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
(FLANGE)
GATE
COLLECTOR
EMITTER
C
G
E
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP10N40C1D
HGTP10N40E1D
HGTP10N50C1D
HGTP10N50E1D
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
400
500
V
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
400
500
V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
20
20
V
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
17.5
17.5
A
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
10
10
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75
75
W
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
0.6
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T
J
, T
STG
-55 to +150
-55 to +150
o
C
HGTP10N40C1D, HGTP10N40E1D,
HGTP10N50C1D, HGTP10N50E1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
File Number
2405.5
3-21
Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTP10N40C1D,
HGTP10N40E1D
HGTP10N50C1D,
HGTP10N50E1D
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 1mA, V
GE
= 0
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2.0
4.5
2.0
4.5
V
Zero Gate Voltage Collector Current
I
CES
V
CE
= 400V, T
C
= +25
o
C
-
250
-
-
A
V
CE
= 500V, T
C
= +25
o
C
-
-
-
250
A
V
CE
= 400V, T
C
= +125
o
C
-
1000
-
-
A
V
CE
= 500V, T
C
= +125
o
C
-
-
-
1000
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
20V, V
CE
= 0
-
100
-
100
nA
Collector-Emitter On Voltage
V
CE(ON)
I
C
= 10A, V
GE
= 10V
-
2.5
-
2.5
V
I
C
= 17.5A, V
GE
= 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 5A, V
CE
= 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 5A, V
CE
= 10V
-
19 (Typ)
-
19 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 10A, V
CE(CLP)
= 300V,
L = 50
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 50
-
50
-
50
ns
Rise Time
t
RI
-
50
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
-
400
ns
Fall Time
t
FI
40E1D, 50E1D
680 (Typ)
1000
680 (Typ)
1000
ns
40C1D, 50C1D
400 (Typ)
500
400 (Typ)
500
ns
Turn-Off Energy Loss per Cycle (Off
Switching Dissipation =
W
OFF
x Frequency)
W
OFF
I
C
= 10A, V
CE(CLP)
= 300V,
L = 50
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 50
40E1D, 50E1D
1810 (Typ)
J
40C1D, 50C1D
1070 (Typ)
J
Thermal Resistance Junction-to-Case
R
JC
-
1.67
-
1.67
o
C/W
Diode Forward Voltage
V
EC
I
EC
= 10A
-
2
-
2
V
Diode Reverse Recovery Time
t
RR
I
EC
= 10A, di/dt = 100A/
s
-
100
-
100
ns
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
3-22
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Typical Performance Curves
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. R
G
= 50
,
V
GE
= 0V ARE THE MIN. ALLOWABLE VALUES
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-
ING CURVE
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
-75
-50
-25
0
+25
+50
+75 +100 +125 +150 +175
I
CE
, COLLECT
OR CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GE
= 10V, R
GEN
= R
GS
= 100
100
80
60
40
20
0
+25
+50
+75
+100
+125
+150
RA
TED POWER DISSIP
A
TION (%)
T
C
, CASE TEMPERATURE (
o
C)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
NORMALIZED GA
TE THRESHOLD VOL
T
AGE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GE
= V
CE
, I
C
= 1mA
35
30
25
20
15
10
5
0
2.5
5.0
7.5
10.0
I
CE
, COLLECT
OR CURRENT (A)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
CE
= 10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX.
-40
o
C
+25
o
C
+125
o
C
0
35
30
25
20
15
10
5
0
1
2
3
4
5
I
CE
, COLLECT
OR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
= 20V
V
GE
= 10V
V
GE
= 8V
V
GE
= 7V
V
GE
= 6V
V
GE
= 5V
V
GE
= 4V
T
C
= +25
o
C
0
35
30
25
20
15
10
5
0
1
2
3
4
I
CE
, COLLECT
OR CURRENT (A)
V
CE(ON)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
GE
= 10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX.
+25
o
C
0
3-23
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 11. TYPICAL FALL TIME (I
C
= 5A)
FIGURE 12. TYPICAL FALL TIME (I
C
= 10A)
Typical Performance Curves
(Continued)
1000
800
600
400
200
0
C, CAP
ACIT
ANCE (pF)
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 0.1MHz
CISS
COSS
CRSS
1200
3.00
2.75
2.50
2.25
2.00
1.75
1.50
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
CE(ON)
, COLLECT
OR-EMITTER ON VOL
T
AGE (V)
I
C
= 5A, V
GE
= 15V
I
C
= 5A, V
GE
= 10V
I
C
= 10A, V
GE
= 15V
I
C
= 10A, V
GE
= 10V
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
T
D(OFF)I
, TURN OFF DELA
Y TIME (ns)
I
C
= 20A, V
GE
= 10V, V
CL
= 300V
L =25
H, R
G
= 25
V
GE
V
CE
I
C
W
OFF
=
I
C
*
V
CE
dt
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
t
FI
, F
ALL TIME (ns)
I
C
= 5A, V
GE
= 10V, V
CL
= 300V
L = 50
H, R
G
= 50
40C1/50C1
40E1/50E1
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
t
FI
, F
ALL TIME (ns)
I
C
= 10A, V
GE
= 10V, V
CL
= 300V
L = 50
H, R
G
= 50
40C1/50C1
40E1/50E1
3-24
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT. (REFER TO APPLICA-
TION NOTES AN7254 AND AN7260)
FIGURE 15. TYPICAL DIODE EMITTER-TO-COLLECTOR
VOLTAGE vs CURRENT FOR ALL TYPES
FIGURE 16. TYPICAL DIODE REVERSE-RECOVERY TIME FOR
ALL TYPES
Test Circuit
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
900
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
W
OFF
, TURN-OFF ENERGY LOSS (
J)
T
J
, JUNCTION TEMPERATURE (
o
C)
10A, 40C1/50C1
10A, 40E1/50E1
20A, 40C1/50C1
20A, 40E1/50E1
V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
H, R
G
= 25
500
375
250
125
0
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (V)
V
GE
, GA
TE-EMITTER VOL
T
AGE (V)
10
4
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
s)
GATE-
EMITTER
VOLTAGE
R
L
= 25
I
G(REF)
= 0.76mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
V
CC
= 0.25BV
CES
V
CC
= BV
CES
8
6
2
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. V
CE
TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
100
10
1
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
EC
, EMITTER-COLLECTOR (V)
I
EC
, EMITTER-COLLECT
OR CURRENT (A)
TYPICAL DIODE ON VOLTAGE
T
J
= +150
o
C
T
J
= +100
o
C
T
J
= +25
o
C
T
J
= -50
o
C
t
RR
, REVERSE RECOVER
Y TIME (ns)
I
EC
, EMITTER-COLLECTOR CURRENT (A)
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
18
20
TYPICAL REVERSE RECOVERY TIME
dI
EC
/d
T
100A/
s
V
R
= 30V, T
J
= +25
o
C
20V
0V
R
GEN
= 100
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 100
L = 50
H
V
CE(CLP)=
R
L
= 13
300V
V
CC
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