ChipFind - документация

Электронный компонент: HGTP12N60B3D

Скачать:  PDF   ZIP
1
File Number
4411.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
HGTG12N60B3D, HGTP12N60B3D,
HGT1S12N60B3DS
27A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C. The IGBT used is the
development type TA49171. The diode used in anti-parallel
with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49173.
Symbol
Features
27A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 112ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60B3D
TO-220AB
12N60B3D
HGTG12N60B3D
TO-247
12N60B3D
HGT1S12N60B3DS
TO-263AB
12N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60B3DS9A.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(BOTTOM SIDE METAL)
C
E
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG12N60B3D, HGTP12N60B3D,
HGT1S12N60B3DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
27
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
12
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
110
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
96A at 600V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
104
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83
W/
o
C
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
100
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
5
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
10
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 150
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.6
2.1
V
T
C
= 150
o
C
-
1.7
2.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
4.5
4.9
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 25
,
V
GE
= 15V
L = 100
H, V
CE
= 600V
96
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.3
-
V
On-State Gate Charge
Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
51
60
nC
V
GE
= 20V
-
68
78
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 25
L = 1mH
Test Circuit (Figure 19)
-
26
-
ns
Current Rise Time
t
rI
-
23
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
150
-
ns
Current Fall Time
t
fI
-
62
-
ns
Turn-On Energy
E
ON
-
304
350
J
Turn-Off Energy (Note 3)
E
OFF
-
250
350
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 25
L = 1mH
Test Circuit (Figure 19)
-
22
-
ns
Current Rise Time
t
rI
-
23
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
280
295
ns
Current Fall Time
t
fI
-
112
175
ns
Turn-On Energy
E
ON
-
500
525
J
Turn-Off Energy (Note 3)
E
OFF
-
660
800
J
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
3
Diode Forward Voltage
V
EC
I
EC
= 12A
-
1.7
2.1
V
Diode Reverse Recovery Time
t
rr
I
EC
= 12A, dI
EC
/dt = 200A/
s
-
32
40
ns
I
EC
= 1.0A, dI
EC
/dt = 200A/
s
-
23
30
ns
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
1.2
o
C/W
Diode
-
-
1.9
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
5
0
20
10
15
25
30
V
GE
= 15V
25
75
100
125
150
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
50
700
30
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
10
20
300
400
200
100
500
600
40
0
60
70
80
90
100
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 100
H
T
C
V
GE
110
o
C
10V
15V
15V
75
o
C
110
o
C
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
3
1
100
30
10
20
300
75
o
C
10V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 1.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
T
J
= 150
o
C, R
G
= 25
, L = 1mH, V
CE
= 480V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
10
11
12
13
14
15
2
4
6
8
12
16
10
30
40
50
60
70
80
100
t
SC
I
SC
V
CE
= 360V, R
G
= 25
, T
J
= 125
o
C
14
90
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
10
20
30
6
8
10
60
50
40
T
C
= -55
o
C
T
C
= 150
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
GE
= 10V
T
C
= 25
o
C
70
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
100
120
140
160
180
0
2
4
0
40
80
6
8
10
60
20
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
E
ON
, TURN-ON ENERGY LOSS (mJ)
2.5
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2.0
1.0
0.5
20
10
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
30
25
15
5
3.0
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
0
0.5
25
15
10
20
30
5
1.0
2.5
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C; V
GE
= 10V OR 15V
T
J
= 25
o
C; V
GE
= 10V OR 15V
2.0
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
, TURN-ON DELA
Y TIME
(ns)
20
15
10
20
30
5
25
30
35
40
45
50
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
25
55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
10
25
0
50
75
125
100
30
5
150
25
20
15
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C and T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
10
15
30
5
125
250
300
25
20
100
200
150
175
225
275
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
10
15
30
5
60
80
100
120
140
25
20
70
90
110
130
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, V
GE
= 10V OR 15V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
20
40
60
80
100
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
11
12
13
14
15
120
T
C
= -55
o
C
140
160
180
4
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
C
= 25
o
C
Q
g
, GATE CHARGE (nC)
20
0
12
15
9
6
3
0
10
5
15
30
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
I
g (REF)
= 1mA, R
L
= 25
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
35
40
45
50
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
C, CAP
A
CIT
ANCE (nF)
0.5
1.0
1.5
2.0
2.5
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS