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Электронный компонент: HGTP12N60C3D

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1
File Number
4261.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
HGTP12N60C3D, HGT1S12N60C3DS
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C. The IGBT used is the
development type TA49123. The diode used in anti-parallel
with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly Developmental Type TA49182.
Symbol
Features
24A, 600V at T
C
= 25
o
C
Typical Fall Time at T
J
= 150
o
C . . . . . . . . . . . . . . . . 210ns
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
JEDEC TO-263A
B
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60C3D
TO-220AB
12N60C3D
HGT1S12N60C3DS
TO-263AB
12N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in Tape and Reel, i.e.,
HGT1S12N60C3DS9A.
C
E
G
E
C
G
COLLECTOR
(FLANGE)
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
24
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
12
A
Average Diode Forward Current at 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(AVG)
12
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
96
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
24A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
104
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
4
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
13
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 150
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
, V
GE
= 15V
T
C
= 25
o
C
-
1.65
2.0
V
T
C
= 150
o
C
-
1.85
2.2
V
I
C
= 15A, V
GE
= 15V
T
C
= 25
o
C
-
1.80
2.2
V
T
C
= 150
o
C
-
2.0
2.4
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
3.0
5.0
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
100
nA
Switching SOA
SSOA
T
J
= 150
o
C,
V
GE
= 15V,
R
G
= 25
,
L = 100
H
V
CE(PK)
= 480V
80
-
-
A
V
CE(PK)
= 600V
24
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.6
-
V
On-State Gate Charge
Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
48
55
nC
V
GE
= 20V
-
62
71
nC
Current Turn-On Delay Time
t
d(ON)I
T
J
= 150
o
C,
I
CE
= I
C110,
V
CE(PK)
= 0.8 BV
CES,
V
GE
= 15V,
R
G
= 25
,
L = 100
H
-
28
-
ns
Current Rise Time
t
ri
-
20
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
270
400
ns
Current Fall Time
t
fi
-
210
275
ns
Turn-On Energy
E
ON
-
380
-
J
Turn-Off Energy (Note 3)
E
OFF
-
900
-
J
Diode Forward Voltage
V
EC
I
EC
= 12A
-
1.7
2.1
V
HGTP12N60C3D, HGT1S12N60C3DS
3
Diode Reverse Recovery Time
t
rr
I
EC
= 12A, dI
EC
/dt = 200A/
s
-
32
40
ns
I
EC
= 1.0A, dI
EC
/dt = 200A/
s
-
23
30
ns
Thermal Resistance
R
JC
IGBT
-
-
1.2
o
C/W
Diode
-
-
1.9
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
at the point where the collector current equals zero (I
CE
= 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
losses due to diode recovery.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
8
10
12
0
10
20
40
50
60
70
14
30
80
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
0
2
4
6
8
10
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
V
GE
= 15.0V
40
50
60
70
80
10.0V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
30
0
1
2
3
4
5
40
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
10
20
50
70
80
60
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
30
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
10
20
40
50
60
70
80
HGTP12N60C3D, HGT1S12N60C3DS
4
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
FIGURE 7. TURN ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
25
50
75
100
125
150
0
5
10
15
20
25
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
20
60
80
120
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
140
100
40
I
SC
5
10
15
20
V
CE
= 360V, R
G
= 25
, T
J
= 125
o
C
t
SC
t
d(ON)I
, TURN ON DELA
Y TIME (ns)
10
20
30
5
10
15
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
25
30
50
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 25
, L = 100
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN OFF DELA
Y TIME (ns)
400
300
200
100
5
10
15
20
25
30
T
J
= 150
o
C, R
G
= 25
, L = 100
H, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
ri
,
TURN ON RISE TIME
(ns)
5
10
100
5
10
15
20
25
30
V
GE
= 15V
V
GE
= 10V
200
T
J
= 150
o
C, R
G
= 25
, L = 100
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fi
,
F
ALL TIME
(ns)
100
5
10
15
20
25
30
200
300
T
J
= 150
o
C, R
G
= 25
, L = 100
H, V
CE(PK)
= 480V
V
GE
= 10V OR 15V
90
80
HGTP12N60C3D, HGT1S12N60C3DS
5
FIGURE 11. TURN ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
5
10
15
20
E
ON
, TURN ON ENERGY LOSS
(mJ)
V
GE
= 15V
0.5
1.0
1.5
2.0
25
30
V
GE
= 10V
T
J
= 150
o
C, R
G
= 25
, L = 100
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN OFF ENERGY LOSS
(mJ)
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
3.0
0
T
J
= 150
o
C, R
G
= 25
, L = 100
H, V
CE(PK)
= 480V
V
GE
= 10V or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
5
10
20
30
10
100
200
1
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
(DUTY FACTOR = 50%)
R
JC
= 1.2
o
C/W
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 25
, L = 100
H
V
GE
= 15V
V
GE
= 10V
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
100
200
300
400
500
600
0
20
40
60
80
100
T
J
= 150
o
C, V
GE
= 15V, R
G
= 25
, L = 100
H
LIMITED BY
CIRCUIT
C
OES
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
500
1000
1500
2000
2500
C, CAP
A
CIT
ANCE (pF)
FREQUENCY = 1MHz
C
IES
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
g
, GATE CHARGE (nC)
15
12
9
6
3
0
10
20
30
40
50
60
0
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
I
G
REF = 1.276mA, R
L
= 50
, T
C
= 25
o
C
HGTP12N60C3D, HGT1S12N60C3DS