3-50
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
407-727-9207
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Copyright
Intersil Corporation 1999
HGTP14N40F3VL
14A, 400V N-Channel,
Logic Level Voltage Clamping IGBT
Package
JEDEC TO-220AB
Symbol
COLLECTOR
(FLANGE)
GATE
COLLECTOR
EMITTER
EMITTER
GATE
COLLECTOR
Features
Logic Level Gate Drive
Internal Voltage Clamp
ESD Gate Protection
T
J
= +150
o
C
Ignition Energy Capable
Applications
Automotive Ignition
Small Engine Ignition
Fuel Ignitor
Description
This N-Channel IGBT is a MOS gated, logic level device which is
intended to be used as an ignition coil driver in automotive ignition
circuits. Unique features include an active voltage clamp between
the drain and the gate and ESD protection for the logic level gate.
Some specifications are unique to this automotive application and
are intended to assure device survival in this harsh environment.
The development type number for this device is TA49023.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP14N40F3VL
TO-220AB
14N40FVL
NOTE: When ordering, use the entire part number.
April 1995
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP14N40F3VL
UNITS
Collector-Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
420
V
Collector-Gate Breakdown Voltage R
GE
= 10k
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
420
V
Collector Current Continuous
V
GE
= 4.5V at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
V
GE
= 4.5V at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C90
19
14
A
A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
10
V
Gate-Emitter Voltage Pulsed or . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
12
V
Gate-Emitter Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
GEM
10
mA
Open Secondary Turn-Off Current
L = 2.3mH at +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CO
L = 2.3mH at +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CO
17
12
A
A
Drain to Source Avalanche Energy at L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . EAS
330
mJ
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
83
W
Power Dissipation Derating T
C
> +25
o
C
0.67
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to +150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Electrostatic Voltage at 100pF, 1500
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
6
KV
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
File Number
3407.2
3-51
Specifications HGTP14N40F3VL
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 10mA,
V
GE
= 0V
T
C
= +150
o
C
345
370
415
V
T
C
= +25
o
C
350
375
420
V
T
C
= -40
o
C
355
380
425
V
Collector-Emitter Clamp Bkdn. Voltage
BV
CE(CL)
I
C
= 10A
T
C
= +150
o
C
350
385
430
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
C
= 1.0mA
T
C
= +25
o
C
24
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= 250V
T
C
= +25
o
C
-
-
50
A
V
CE
= 250V
T
C
= +150
o
C
-
-
250
A
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 10A
V
GE
= 4.5V
T
C
= +25
o
C
-
-
2.0
V
T
C
= +150
o
C
-
-
2.3
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1.0mA
V
CE
= V
GE
T
C
= +25
o
C
1.0
1.5
2.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
10V
-
-
10
A
Gate-Emitter Breakdown Voltage
BV
GES
I
GES
=
1.0mA
12
-
-
V
Current Turn-off Time-Inductive Load
t
D(OFF)I
+
t
F(OFF)I
R
L
= 32
, I
C
= 10A, R
G
= 25
,
L = 550
H, V
CL
= 320V, V
GE
= 5V,
T
C
= +125
o
C
-
12
16
s
Inductive Use Test
UIS
L = 2.3mH,
V
G
= 5V,
Figure 13
T
C
= +150
o
C
12
-
-
A
T
C
= +25
o
C
17
-
-
A
Thermal Resistance
R
JC
-
1.5
-
o
C/W
3-52
HGTP14N40F3VL
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYP.)
FIGURE 2. SATURATION CHARACTERISTIC (TYP.)
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 4. OPEN SECONDARY CURRENT AS A FUNCTION OF
INDUCTANCE (TYP.)
FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOR -
EMITTER VOLTAGE (TYP.)
FIGURE 6. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPED-
ANCE, JUNCTION-TO-CASE, vs PULSE DURATION
3-53
HGTP14N40F3VL
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE; T
J
= +150
o
C (TYP.)
FIGURE 8. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE (TYP.)
FIGURE 9. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE (TYP.)
FIGURE 10. INDUCTIVE CURRENT TURN-OFF TIME AS A
FUNCTION OF JUNCTION TEMPERATURE (TYP.)
FIGURE 11. LEAKAGE CURRENTS AS A FUNCTION OF
JUNCTION TEMPERATURE (TYP.)
FIGURE 12. THRESHOLD VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE (TYP.)
Typical Performance Curves
(Continued)
3-54
HGTP14N40F3VL
Test Circuits
FIGURE 13. USE TEST CIRCUIT
FIGURE 14. INDUCTIVE SWITCHING TEST CIRCUIT
R
G
G
C
E
V
DD
2.3mH
PULSE
GEN
DUT
R
GEN
= 50
+
-
V
CC
DUT
320V
5V
C
G
E
R
GE
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
L = 550
H
Handling Precautions for IGBT's
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler's body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBT's are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBT's
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as "
ECCOSORBD LD26" or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V
GEM
. Exceeding the rated V
GE
can result in per-
manent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
Trademark Emerson and Cumming, Inc.
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