1
File Number
4652.2
HGTD1N120CNS, HGTP1N120CN
6.2A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120CNS, and the HGTP1N120CN are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49317.
Symbol
Features
6.2A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical E
OFF
. . . . . . . . . . . . . . . . . . . 200
J at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Temperature Compensating SABERTM Model
Thermal Impedance SPICE Model
www.intersil.com
Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
Packaging
JEDEC TO-220AB
JEDEC TO-252AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD1N120CNS
TO-252AA
1N120C
HGTP1N120CN
TO-220AB
1N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120CNS9A
C
E
G
E
C
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(FLANGE)
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
SABERTM is a trademark of Analogy, Inc.
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTD1N120CNS,
HGTP1N120CN
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
6.2
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
3.2
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
6
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
6A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
60
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.476
W/
o
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
10
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
260
o
C
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
8
s
Short Circuit Withstand Time (Note 3) at V
GE
= 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
11
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; V
GE
= 15V; Pulse width limited by maximum junction temperature.
2. I
CE
= 7A, L = 400
H, V
GE
= 15V, T
J
= 25
o
C.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 82
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 125
o
C
-
20
-
A
T
C
= 150
o
C
-
-
1.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 1.0A,
V
GE
= 15V
T
C
= 25
o
C
-
2.05
2.4
V
T
C
= 150
o
C
-
2.75
3.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 50
A, V
CE
= V
GE
6.0
7.1
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 82
,
V
GE
= 15V,
L = 2mH, V
CE(PK)
= 1200V
6
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 1.0A, V
CE
= 0.5 BV
CES
-
9.7
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 1.0A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
13
19
nC
V
GE
= 20V
-
16
28
nC
HGTD1N120CNS, HGTP1N120CN
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 1.0A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 18)
-
15
21
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
65
95
ns
Current Fall Time
t
fI
-
365
450
ns
Turn-On Energy (Note 5)
E
ON1
-
78
-
J
Turn-On Energy (Note 5)
E
ON2
-
175
195
J
Turn-Off Energy (Note 4)
E
OFF
-
140
155
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 1.0 A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 18)
-
13
20
ns
Current Rise Time
t
rI
-
11
18
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
75
100
ns
Current Fall Time
t
fI
-
465
625
ns
Turn-On Energy (Note 5)
E
ON1
-
83
-
J
Turn-On Energy (Note 5)
E
ON2
-
385
460
J
Turn-Off Energy (Note 4)
E
OFF
-
200
225
J
Thermal Resistance Junction To Case
R
JC
-
-
2.1
o
C/W
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
0
4
5
1
25
75
100
125
150
3
2
6
7
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
1
2
600
800
400
200
1000
1200
0
4
6
5
7
T
J
= 150
o
C, R
G
= 82
, V
GE
= 15V, L = 2mH
HGTD1N120CNS, HGTP1N120CN
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
0.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
10
2.0
1.0
100
3.0
200
300
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 2.1
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C
= 75
o
C, V
GE
= 15V
IDEAL DIODE
V
CE
= 960V
T
J
= 150
o
C, R
G
= 82
, L = 4mH
T
C
V
GE
110
o
C 13V
15V
15V
75
o
C
110
o
C
75
o
C 13V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
13
14
15
10
12
14
16
18
20
10
12
14
16
18
20
V
CE
= 840V, R
G
= 82
, T
J
= 125
o
C
t
SC
I
SC
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
2
4
6
6
8
1
3
5
7
1
3
5
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 13V
PULSE DURATION = 250
s
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
2
4
6
8
4
0
5
6
3
2
1
1
3
5
7
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
E
ON2
, TURN-ON ENERGY LOSS (
J)
1000
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
800
400
200
2
1
3
1200
0
0.5
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (
J)
0
1
2
3
0.5
100
300
200
400
500
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V OR 15V
T
J
= 25
o
C, V
GE
= 13V OR 15V
HGTD1N120CNS, HGTP1N120CN
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y TIME
(ns)
1
0.5
8
12
20
2
3
16
24
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 13V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
4
8
24
20
12
16
28
1
0.5
2
3
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
1
3
60
2
56
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
80
64
72
0.5
1.5
2.5
68
76
84
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
0.5
1
3
240
320
400
2
280
440
520
480
360
1.5
2.5
560
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V OR 15V
T
J
= 25
o
C, V
GE
= 13V OR 15V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
2
4
6
6
9
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
10
12
15
14
16
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250
s
T
C
= 25
o
C
T
C
= -55
o
C
T
C
= 150
o
C
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
15
3
6
0
0
20
8
4
12
9
12
16
I
G(REF)
= 1mA, R
L
= 600
, T
C
= 25
o
C
V
CE
= 1200V
V
CE
= 800V
V
CE
= 400V
HGTD1N120CNS, HGTP1N120CN
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