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Электронный компонент: HGTP2N120CND

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1
File Number
4681.2
HGTP2N120CND, HGT1S2N120CNDS
13A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTP2N120CND and HGT1S2N120CNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49313. The Diode used is the development type TA49056
(Part number RHRD4120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49311.
Symbol
Features
13A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 360ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance SPICE Model
Temperature Compensating SABERTM Model
www.intersil.com
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP2N120CND
TO-220AB
2N120CND
HGT1S2N120CNDS
TO-263AB
2N120CND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120CNDS9A.
E
G
C
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
E
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABERTM is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP2N120CND,
HGT1S2N120CNDS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
13
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
7
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
20
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
13A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
104
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 51
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
100
A
T
C
= 125
o
C
-
100
-
A
T
C
= 150
o
C
-
-
1.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 2.6A,
V
GE
= 15V
T
C
= 25
o
C
-
2.05
2.40
V
T
C
= 150
o
C
-
2.75
3.50
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 45
A, V
CE
= V
GE
6.4
6.7
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 51
,
V
GE
= 15V,
L = 5mH, V
CE(PK)
= 1200V
13
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 2.6A, V
CE
= 0.5 BV
CES
-
10.2
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 2.6A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
30
36
nC
V
GE
= 20V
-
36
43
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 2.6A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 51
,
L = 5mH
Test Circuit (Figure 20)
-
25
30
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
205
220
ns
Current Fall Time
t
fI
-
260
320
ns
Turn-On Energy
E
ON
-
425
590
J
Turn-Off Energy (Note 3)
E
OFF
-
355
390
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C,
I
CE
= 2.6A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 51
,
L = 5mH
Test Circuit (Figure 20)
-
21
25
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
225
240
ns
Current Fall Time
t
fI
-
360
420
ns
Turn-On Energy
E
ON
-
800
1100
J
Turn-Off Energy (Note 3)
E
OFF
-
530
580
J
HGTP2N120CND, HGT1S2N120CNDS
3
Diode Forward Voltage
V
EC
I
EC
= 2.6A
-
1.8
2.0
V
Diode Reverse Recovery Time
t
rr
I
EC
= 1A, dl
EC
/dt = 200A/
s
-
31
35
ns
I
EC
= 2.6A, dl
EC
/dt = 200A/
s
-
47
52
ns
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
1.20
o
C/W
Diode
-
-
2.5
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
0
25
75
100
125
150
2
10
V
GE
= 15V
12
14
8
6
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
10
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
4
6
600
800
400
200
1000
1200
0
12
14
8
2
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 5mH
16
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
5
50
100
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 1.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
T
C
V
GE
12V
15V
110
o
C
110
o
C
T
C
V
GE
75
o
C 12V
75
o
C 15V
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 5mH
1
3
4
2
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
20
30
40
50
10
0
20
30
40
50
10
0
10
14
15
13
12
11
V
CE
= 840V, R
G
= 51
, T
J
= 125
o
C
I
SC
t
SC
HGTP2N120CND, HGT1S2N120CNDS
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
1
2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
2
4
3
4
5
10
8
6
T
C
= 25
o
C
T
C
= 150
o
C
250
s PULSE TEST
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= -55
o
C
6
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2
4
6
0
1
2
3
4
5
8
0
10
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
250
s PULSE TEST
E
ON
, TURN-ON ENERGY LOSS (
J)
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1000
500
2.5
1.5
3.5
3.0
2.0
1.0
4.0
4.5
5.0
2000
0
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (
J)
3.0
2.0
1.5
2.5
3.5
1.0
300
200
400
500
4.5
4.0
600
700
800
900
5.0
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y TIME
(ns)
1.5
1.0
2.0
3.0
20
30
2.5
3.5
4.5
4.0
5.0
40
35
25
15
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
45
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
0
10
15
40
20
2.0
1.0
30
1.5
3.5
3.0
2.5
25
5.0
4.5
4.0
35
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
5
HGTP2N120CND, HGT1S2N120CNDS
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
5.0
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
400
350
300
250
200
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
150
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
R
G
= 51
, L = 5mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
500
300
700
400
600
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
200
100
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
5
10
15
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
20
25
30
14
15
35
250
s PULSE TEST
DUTY CYCLE <0.5%, V
CE
= 20V
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
40
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
14
16
30
25
20
10
12
15
10
5
0
I
G (REF)
= 1mA, R
L
= 260
, T
C
= 25
o
C
V
CE
= 400V
V
CE
= 800V
V
CE
= 1200V
8
6
4
2
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
30
50
C, CAP
A
CIT
ANCE (nF)
70
90
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
80
60
40
20
10
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
V
GE
= 10V
V
GE
= 15V
DUTY CYCLE <0.5%, T
C
= 110
o
C
250
s PULSE TEST
HGTP2N120CND, HGT1S2N120CNDS