1
File Number
4414.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
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Copyright
Intersil Corporation 2000
HGTP3N60B3D, HGT1S3N60B3DS
7A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25
o
C and
150
o
C. The diode used in anti-parallel with the IGBT is the
RHRD460. The IGBT used is TA49192.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49193.
Symbol
Features
7A, 600V T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 115ns at T
J
= 125
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Related Literature
TB334 "Guidelines for Soldering Surface Mount
- Components to PC Boards
Packaging
JEDEC TO-220AB
TO-263, TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP3N60B3D
TO-220AB
G3N60B3D
HGT1S3N60B3DS
TO-263AB
G3N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60B3DS9A.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP3N60B3D,
HGT1S3N60B3DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
7.0
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C110
3.5
A
Average Diode Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
EC(AVG)
4.0
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
20
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
18A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
33.3
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.27
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
300
260
o
C
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
5
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
10
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 82
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 150
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.8
2.1
V
T
C
= 150
o
C
-
2.1
2.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
4.5
5.4
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 82
,
V
GE
= 15V
L = 500
H, V
CE
= 600V
18
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.9
-
V
On-State Gate Charge
Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
18
22
nC
V
GE
= 20V
-
21
25
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 1mH
Test Circuit (Figure 19)
-
18
-
ns
Current Rise Time
t
rI
-
16
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
105
-
ns
Current Fall Time
t
fI
-
70
-
ns
Turn-On Energy
E
ON
-
66
75
J
Turn-Off Energy (Note 1)
E
OFF
-
88
160
J
HGTP3N60B3D, HGT1S3N60B3DS
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 1mH
Test Circuit (Figure 19)
-
16
-
ns
Current Rise Time
t
rI
-
18
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
220
295
ns
Current Fall Time
t
fI
-
115
175
ns
Turn-On Energy
E
ON
-
130
140
J
Turn-Off Energy (Note 1)
E
OFF
-
210
325
J
Diode Forward Voltage
V
EC
I
EC
= 3A
-
2.0
2.5
V
Diode Reverse Recovery Time
t
rr
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
-
22
ns
I
EC
= 3A, dI
EC
/dt = 200A/
s
-
-
28
ns
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
3.75
o
C/W
Diode
3.0
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
25
50
75
100
125
150
1
0
3
5
2
4
6
7
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
700
6
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
2
4
300
400
200
100
500
600
8
0
12
14
16
18
20
T
J
= 150
o
C, R
G
= 82
, V
GE
= 15V L = 500
H
HGTP3N60B3D, HGT1S3N60B3DS
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
2
4
6
1
100
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE
= 480V
3
5
7
200
T
C
V
GE
110
o
C
10V
15V
15V
75
o
C
110
o
C
75
o
C
10V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 3.75
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
10
11
12
13
14
15
4
6
8
10
14
16
12
15
20
25
30
35
40
45
t
SC
I
SC
V
CE
= 360V, R
G
= 82
, T
J
= 125
o
C
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
2
4
6
8
6
7
8
9
10
14
12
10
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
0
1
2
3
4
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
25
10
15
20
5
6
7
8
9
10
5
30
E
ON
, TURN-ON ENERGY LOSS (mJ)
0.5
0.3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0.4
0.2
0.1
0
8
5
2
3
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
V
GE
= 15V, T
J
= 150
o
C, T
J
= 25
o
C
7
6
4
1
0.6
0.7
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
0.1
0.2
0.3
0.4
0
8
6
4
2
3
5
7
1
0.5
0.6
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C; V
GE
= 10V OR 15V
T
J
= 25
o
C; V
GE
= 10V OR 15V
HGTP3N60B3D, HGT1S3N60B3DS
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y TIME
(ns)
10
4
2
5
8
1
15
20
25
30
35
40
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
7
6
3
45
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
2
10
30
20
40
50
70
60
3
6
8
1
T
J
= 25
o
C AND T
J
= 150
o
C, V
GE
= 10V
80
7
5
4
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
4
6
8
1
100
150
175
250
225
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V
7
5
3
75
125
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
2
4
6
8
1
60
80
100
120
140
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
7
5
3
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
5
10
15
20
25
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= 25
o
C
PULSE DURATION = 250
s
11
12
13
14
15
30
T
C
= -55
o
C
Q
g
, GATE CHARGE (nC)
20
0
12
15
9
6
3
0
10
5
15
25
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
I
G(REF)
= 1mA,
V
CE
= 200V V
CE
= 400V
V
CE
= 600V
R
L
= 171
, T
C
= 25
o
C
HGTP3N60B3D, HGT1S3N60B3DS
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