ChipFind - документация

Электронный компонент: HGTP3N60C3D

Скачать:  PDF   ZIP
www.docs.chipfind.ru
background image
1
File Number
4140.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
HGTP3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diodes
The HGTP3N60C3D, and HGT1S3N60C3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
Formerly Developmental Type TA49119.
Symbol
Features
6A, 600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 130ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP3N60C3D
TO-220AB
G3N60C3D
HGT1S3N60C3DS
TO-263AB
G3N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60C3DS9A.
C
E
G
GATE
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
COLLECTOR
(FLANGE)
GATE
EMITTER
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
background image
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP3N60C3D, HGT1S3N60C3DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
6
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
3
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
24
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
18A at 480V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
33
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.27
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 82
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.65
2.0
V
T
C
= 150
o
C
-
1.85
2.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A,
V
CE
= V
GE
T
C
= 25
o
C
3.0
5.5
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
25V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C
R
G
= 82
V
GE
= 15V
L = 1mH
V
CE(PK)
= 480V
18
-
-
A
V
CE(PK)
= 600V
2
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8.3
-
V
On-State Gate Charge
Q
G(ON)
IC = IC110,
VCE = 0.5 BVCES
V
GE
= 15V
-
10.8
13.5
nC
V
GE
= 20V
-
13.8
17.3
nC
Current Turn-On Delay Time
t
d(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 1mH
-
5
-
ns
Current Rise Time
t
rI
-
10
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
325
400
ns
Current Fall Time
t
fI
-
130
275
ns
Turn-On Energy
E
ON
-
85
-
J
Turn-Off Energy (Note 3)
E
OFF
-
245
-
J
Diode Forward Voltage
V
EC
I
EC
= 3A
-
2.0
2.5
V
Diode Reverse Recovery Time
t
RR
I
EC
= 3A, dI
EC
/dt = 200A/
s
-
22
28
ns
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
17
22
ns
Thermal Resistance
R
JC
IGBT
-
-
3.75
o
C/W
Diode
-
-
3.0
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTP3N60C3D and HGT1S3N60C3DS were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
HGTP3N60C3D, HGT1S3N60C3DS
background image
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
8
10
12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
18
20
T
C
= 150
o
C
T
C
= -40
o
C
T
C
= 25
o
C
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
2
4
6
8
10
12V
V
GE
= 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
9.0V
8.5V
7.5V
7.0V
T
C
= 25
o
C
PULSE DURATION = 250
s
DUTY CYCLE <0.5%
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= -40
o
C
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= -40
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
0
2
4
8
10
12
14
6
16
18
20
T
C
= 150
o
C
T
C
= 25
o
C
25
50
75
100
125
150
0
1
2
3
4
5
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
7
6
I
SC
, PEAK SHOR
T CIRCUIT CURRENT(A)
0
20
30
50
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
S)
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
60
40
10
I
SC
t
SC
0
4
10
14
V
CE
= 360V, R
G
= 82
, T
J
= 125
o
C
2
6
8
12
70
HGTP3N60C3D, HGT1S3N60C3DS
background image
4
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d(ON)I
, TURN-ON DELA
Y TIME (ns)
3
1
2
3
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
5
6
10
V
GE
= 15V
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME (ns)
500
400
300
200
V
GE
= 10V
V
GE
= 15V
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
TURN-ON RISE TIME
(ns)
5
10
80
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
ALL TIME
(ns)
V
GE
= 10V or 15V
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
300
200
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
E
ON
, TURN-ON ENERGY LOSS
(mJ)
0.1
0.2
0.3
0.4
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.5
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS
(mJ)
0.1
0.2
0.3
0.4
0.5
0.6
0
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.8
0.7
V
GE
= 10V or 15V
HGTP3N60C3D, HGT1S3N60C3DS
background image
5
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
1
2
4
6
100
200
10
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
(DUTY FACTOR = 50%)
R
JC
= 3.75
o
C/W
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82
, L = 1mH
V
GE
= 10V
V
GE
= 15V
5
3
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
100
200
300
400
500
600
0
2
4
6
8
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82
, L = 1mH
10
12
14
16
18
20
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
200
300
400
500
C, CAP
A
CIT
ANCE (pF)
C
IES
FREQUENCY = 1MHz
C
OES
C
RES
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
V
CE
, COLLECT
OR T
O
EMITTER
V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
0
240
120
360
480
600
15
12
9
6
3
0
2
4
6
8
10
12
14
0
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
I
G(REF)
= 1.060mA
R
L
= 200
T
C
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
JC
,
NORMALIZED THERMAL RESPONSE
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.05
0.2
0.1
0.02
0.01
HGTP3N60C3D, HGT1S3N60C3DS