ChipFind - документация

Электронный компонент: HGTP7N60C3D

Скачать:  PDF   ZIP
1
File Number
4150.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
HGTP7N60C3D, HGT1S7N60C3DS
14A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGTP7N60C3D and HGT1S7N60C3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is developmental type
TA49115. The diode used in anti-parallel with the IGBT is
developmental type TA49057.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49121.
Symbol
Features
14A, 600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 140ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP7N60C3D
TO-220AB
G7N60C3D
HGT1S7N60C3DS
TO-263AB
G7N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.
C
E
G
GATE
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
COLLECTOR
(FLANGE)
GATE
EMITTER
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP7N60C3D, HGT1S7N60C3D
HGT1S7N60C3DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
14
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
7
A
Average Diode Forward Current at 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(AVG)
8
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
56
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
40A at 480V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
60
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.487
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
1
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 50
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.6
2.0
V
T
C
= 150
o
C
-
1.9
2.4
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A,
V
CE
= V
GE
T
C
= 25
o
C
3.0
5.0
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
25V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C
R
G
= 50
V
GE
= 15V
L = 1mH
V
CE(PK)
= 480V
40
-
-
A
V
CE(PK)
= 600V
6
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
23
30
nC
V
GE
= 20V
-
30
38
nC
Current Turn-On Delay Time
t
d(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 50
L = 1mH
-
8.5
-
ns
Current Rise Time
t
rI
-
11.5
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
350
400
ns
Current Fall Time
t
fI
-
140
275
ns
Turn-On Energy
E
ON
-
165
-
J
Turn-Off Energy (Note 3)
E
OFF
-
600
-
J
Diode Forward Voltage
V
EC
I
EC
= 7A
-
1.9
2.5
V
HGTP7N60C3D, HGT1S7N60C3DS
3
Diode Reverse Recovery Time
t
rr
I
EC
= 7A, dI
EC
/dt = 200A/
s
-
25
35
ns
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
18
30
ns
Thermal Resistance
R
JC
IGBT
-
-
2.1
o
C/W
Diode
-
-
2.0
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
4
6
8
10
12
0
5
10
20
25
30
35
14
15
40
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0
2
4
6
8
10
5
10
15
12.0V
8.5V
9.0V
8.0V
7.0V
V
GE
= 15.0V
20
25
30
35
40
PULSE DURATION = 250
s,
DUTY CYCLE <0.5%,
T
C
= 25
o
C
10.0V
7.5V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
15
0
1
2
3
4
5
20
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
5
10
25
35
40
30
DUTY CYCLE <0.5%, V
GE
= 10V
PULSE DURATION = 250
s
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
15
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
5
10
20
25
30
35
40
HGTP7N60C3D, HGT1S7N60C3DS
4
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR
TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
25
50
75
100
125
150
0
3
6
9
12
15
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
60
80
120
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (mS)
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
140
100
40
I
SC
t
SC
10
12
V
CE
= 360V, R
G
= 50
, T
J
= 125
o
C
4
6
8
2
t
d(ON)I
, TURN-ON DELA
Y TIME (ns)
10
20
30
2
5
11
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
17
20
40
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
8
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME (ns)
400
350
250
200
8
11
14
17
20
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V or 15V
300
5
500
450
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
TURN-ON RISE TIME
(ns)
5
10
100
V
GE
= 15V
V
GE
= 10V
200
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
ALL TIME
(ns)
100
200
300
150
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
250
V
GE
= 10V or 15V
HGTP7N60C3D, HGT1S7N60C3DS
5
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
E
ON
, TURN-ON ENERGY LOSS
(
J)
100
500
1000
2000
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS
(
J)
500
1000
3000
100
V
GE
= 10V OR 15V
2
8
11
14
17
20
5
T
J
= 150
o
C, R
G
= 50
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
2
10
20
30
10
100
200
1
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 50
, L = 1mH
V
GE
= 15V
V
GE
= 10V
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
(DUTY FACTOR = 50%)
R
JC
= 2.1
o
C/W
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
100
200
300
400
500
600
0
10
20
30
40
T
J
= 150
o
C, V
GE
= 15V, R
G
= 50
, L = 1mH
50
C
OES
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
1000
1200
C, CAP
A
CIT
ANCE (pF)
C
IES
FREQUENCY = 1MHz
800
600
400
200
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
V
CE
, COLLECT
OR T
O
EMITTER
V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1.044mA, R
L
= 50
, T
C
= 25
o
C
0
300
200
400
500
600
15
12.5
10
7.5
5
0
5
10
15
20
25
30
0
100
2.5
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
HGTP7N60C3D, HGT1S7N60C3DS