58
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFETTM is a trademark of Intersil Corporation. PSPICE
is a registered trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF76107D3, HUF76107D3S
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFETTM process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low-voltage bus switches, and power management
in portable and battery-operated products.
Formerly developmental type TA76107.
Features
Logic Level Gate Drive
20A, 30V
Ultra Low On-Resistance, r
DS(ON)
= 0.052
Temperature Compensating PSPICE
Model
Temperature Compensating SABER
Model
Thermal Impedance SPICE Model
Thermal Impedance SABER Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76107D3
TO-251AA
76107D
HUF76107D3S
TO-252AA
76107D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.
D
G
S
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
4701.1
59
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
30
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
16
V
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
20
10.5
10
Figure 4
A
A
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35
0.30
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 12)
30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 25V, V
GS
= 0V
-
-
1
A
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
16V
-
-
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 11)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 20A, V
GS
= 10V (Figure 9, 10)
-
0.042
0.052
I
D
= 10.5A, V
GS
= 5V (Figure 9)
-
0.058
0.080
I
D
= 10A, V
GS
= 4.5V (Figure 9)
-
0.065
0.085
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
JC
(Figure 3)
-
-
3.3
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-251, TO-252
-
-
100
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 4.5V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
10A, R
L
= 1.50
,
V
GS
=
4.5V, R
GS
= 33
(Figure 15)
-
-
120
ns
Turn-On Delay Time
t
d(ON)
-
14
-
ns
Rise Time
t
r
-
66
-
ns
Turn-Off Delay Time
t
d(OFF)
-
16
-
ns
Fall Time
t
f
-
22
-
ns
Turn-Off Time
t
OFF
-
-
57
ns
HUF76107D3, HUF76107D3S
60
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
20A, R
L
=0.75
,
V
GS
=
10V, R
GS
= 33
(Figures 16)
-
-
75
ns
Turn-On Delay Time
t
d(ON)
-
18
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
62
-
ns
Fall Time
t
f
-
20
-
ns
Turn-Off Time
t
OFF
-
-
125
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V,I
D
10.5A,
R
L
= 1.43
I
g(REF)
= 1.0mA
(Figure 14)
-
8.6
10.3
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
4.7
5.7
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.35
0.42
nC
Gate to Source Gate Charge
Q
gs
-
1.00
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
2.40
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 13)
-
315
-
pF
Output Capacitance
C
OSS
-
170
-
pF
Reverse Transfer Capacitance
C
RSS
-
30
-
pF
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 10.5A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 10.5A, dI
SD
/dt = 100A/
s
-
-
39
ns
Reverse Recovered Charge
Q
RR
I
SD
= 10.5A, dI
SD
/dt = 100A/
s
-
-
49
nC
Typical Performance Curves
Unless otherwise specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
10
0
25
50
75
100
125
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
25
150
5
20
V
GS
= 4.5V
V
GS
= 10V
15
HUF76107D3, HUF76107D3S
61
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
Typical Performance Curves
Unless otherwise specified (Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
2
0.1
1
10
-2
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
0.01
10
-4
10
-3
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
T
C
= 25
o
C
I
=
I
25
150 - T
C
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
DM
, PEAK CURRENT (A)
500
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, PULSE WIDTH (s)
100
V
GS
= 5V
T
J
= MAX RATED
T
C
= 25
o
C
10ms
1ms
V
DSS(MAX)
= 30V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
100
200
10
I
D
, DRAIN CURRENT (A)
10
100
s
1
10
100
100
0.01
200
1
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
10
0.001
HUF76107D3, HUF76107D3S
62
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless otherwise specified (Continued)
0
1
2
6
0
10
20
25
I
D,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
150
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
30
4
5
3
15
5
V
GS
= 3.5V
V
GS
= 4V
0
1
3
4
5
6
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
V
GS
= 10V
V
GS
= 3V
V
GS
= 4.5V
2
0
10
20
25
30
15
5
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
50
60
70
90
30
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
6
10
8
I
D
= 20A
I
D
= 12A
I
D
= 5A
r
DS(ON)
, DRAIN T
O
SOURCE
ON RESIST
ANCE (m
)
40
80
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.50
0.75
1.00
1.25
1.75
-60
0
60
120
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
180
1.50
2.00
120
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 20A
-60
0
60
120
0.6
0.8
0.9
1.1
1.2
NORMALIZED GA
TE
T
J
, JUNCTION TEMPERATURE (
o
C)
THRESHOLD V
O
L
T
A
GE
V
GS
= V
DS
, I
D
= 250
A
180
1.0
0.7
0.6
1.15
1.10
1.00
0.95
0.90
-60
0
60
120
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
I
D
= 250
A
180
1.05
HUF76107D3, HUF76107D3S
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