4-9
File Number
2221.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRF9530, RF1S9530SM
12A, 100V, 0.300 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. The high input impedance allows these
types to be operated directly from integrated circuits.
Formerly developmental type TA17511.
Features
12A, 100V
r
DS(ON)
= 0.300
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263A
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9530
TO-220AB
IRF9530
RF1S9530SM
TO-263AB
RF1S9530
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9530SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
4-10
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9530,
RF1S9530SM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
-100
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
-12
-7.5
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
-48
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
75
W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
500
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= -250
A, V
GS
= 0V, (Figure 10)
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
-25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
-250
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= -10V,
(Figure 7)
-12
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= -6.5A, V
GS
= -10V, (Figures 8, 9)
-
0.250
0.300
Forward Transconductance (Note 2)
gfs
V
DS
> I
D(ON)
x r
DS(ON)
Max, I
D
= -6.5A
(Figure 12)
2
3.8
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 50V, I
D
-12A, R
G
= 50
,
V
GS
= 10V
R
L
=
4.2
,
(Figures 17, 18)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
-
30
60
ns
Rise Time
t
r
-
70
140
ns
Turn-Off Delay Time
t
d(off)
-
70
140
ns
Fall Time
t
f
-
70
140
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= -10V, I
D
= -12A, V
DSS
= 0.8 x Rated BV
DSS,
(Figure 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature
-
25
45
nC
Gate to Source Charge
Q
gs
-
13
-
nC
Gate to Drain ("Miller") Charge
Q
gd
-
12
-
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V, f = 1MHz, (Figure 11)
-
500
-
pF
Output Capacitance
C
OSS
-
300
-
pF
Reverse Transfer Capacitance
C
RSS
-
100
-
pF
Internal Drain Inductance
L
D
Measured From the
Contact Screw On Tab To
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
JC
-
-
1.67
o
C/W
Thermal Resistance Junction to Ambient
R
JA
Typical Socket Mount
-
-
62.5
o
C/W
L
S
L
D
G
D
S
IRF9530, RF1S9530SM
4-11
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the In-
tegral Reverse
P-N Junction Diode
-
-
-12
A
Pulse Source to Drain Current
(Note 2)
I
SDM
-
-
-48
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= -12A, V
GS
= 0V,
(Figure 13)
-
-
-1.5
V
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= -12A, dI
SD
/dt = 100A/
s
-
300
-
ns
Reverse Recovery Charge
Q
RR
T
J
= 150
o
C, I
SD
= -12A, dI
SD
/dt = 100A/
s
-
1.8
-
C
NOTES:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 5.2mH, R
G
= 25
,
peak I
AS
= 12A. See Figures 15, 16.
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
-2.4
0
25
50
100
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
-12.0
150
-9.6
75
125
-4.8
-7.2
t
1
, RECTANGULAR PULSE DURATION (s)
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
10
10
-1
1
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ R
JA
+T
C
P
DM
t
1
0.1
0.02
0.2
0.5
0.01
0.05
t
2
IRF9530, RF1S9530SM
4-12
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
-100
-1
100
s
10
s
DC
1ms
100ms
-10
-1
-0.1
-1000
-10
-100
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10ms
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
0
-10
-20
-30
-40
-4
-8
-12
-16
-20
-50
V
GS
= -8V
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -4V
PULSE DURATION = 80
s
V
GS
= -10V
V
GS
= -9V
DUTY CYCLE = 0.5% MAX
0
-2
0
-2
-4
-6
-10
-4
-6
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-8
-8
-10
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
V
GS
= -9V
V
GS
= -10V
V
GS
= -8V
V
GS
= -7V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
-4
-6
-8
-10
-2
0
-12
-16
I
D(ON)
, ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-20
-8
-4
V
DS
I
D(ON)
x r
DS(ON)
125
o
C
25
o
C
-55
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
0.8
-10
-20
-30
-40
r
DS(ON)
DRAIN T
O
SOURCE
I
D
, DRAIN CURRENT (A)
-50
1.0
0
0.2
0.4
0.6
V
GS
= -10V
V
GS
= - 20V
2
s PULSE TEST
ON RESIST
ANCE (
)
NORMALIZED DRAIN T
O
SOURCE
2.2
1.4
1.0
0.6
0.2
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.8
80
V
GS
= -10V, I
D
= -6.5A
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
IRF9530, RF1S9530SM
4-13
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
0.95
0.85
0.75
-40
0
40
80
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
120
160
1.05
1.15
I
D
= 250
A
1000
200
0
0
-20
-50
C, CAP
A
CIT
ANCE (pF)
600
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
800
400
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
C
ISS
-10
-30
-40
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
0
-4
-8
-12
-16
1
2
3
4
5
-20
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
-0.4
-1.0
-1.2
-1.6
-1.8
-0.6
-0.1
-1.0
-10
I
SD
, DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-100
-0.8
-1.4
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE (V)
0
8
16
24
40
- 5
0
- 10
- 15
42
V
DS
= -80V
I
D
= -12A
V
DS
= -50V
V
DS
= -20V
IRF9530, RF1S9530SM
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