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Электронный компонент: P45N02

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1
RFP45N02L,
RF1S45N02L, RF1S45N02LSM
45A, 20V, 0.022 Ohm, N-Channel
Logic Level Power MOSFETs
May 1997
Features
45A, 20V
r
DS(ON)
= 0.022
Temperature Compensating PSPICE Model
Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are
N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
Formerly developmental type TA49243.
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N02L
TO-220AB
FP45N02L
RF1S45N02L
TO-262AA
F45N02L
RF1S45N02LSM
TO-263AB
F45N02L
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S45N02LSM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
A
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
File Number
4342
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
2
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
RFP45N02L, RF1S45N02L,
RF1S45N02LSM
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
20
V
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
20
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
10
V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
45
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
0.606
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
-55 to 175
o
C
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
20
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V,
V
GS
= 0V
T
C
= 25
o
C
-
-
1
A
T
C
= 150
o
C
-
-
50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
10V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 45A, V
GS
= 5V
-
-
0.022
Turn-On Time
t
ON
V
DD
= 15V, I
D
45A,
R
L
= 0.33
, V
GS
= 5V,
R
GS
= 5
-
-
260
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
160
-
ns
Turn-Off Delay Time
t
d(OFF)
-
20
-
ns
Fall Time
t
f
-
20
-
ns
Turn-Off Time
t
OFF
-
-
60
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 16V,
I
D
45A,
R
L
= 0.35
-
50
60
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
30
36
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
1.5
1.8
nC
Input Capacitance
C
ISS
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
1300
-
pF
Output Capacitance
C
OSS
-
724
-
pF
Reverse Transfer Capacitance
C
RSS
-
250
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
1.65
o
C/W
Thermal Resistance Junction to Ambient
R
JA
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 45A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 45A, dI
SD
/dt = 100A/
s
-
-
125
ns
RFP45N02L, RF1S45N02L, RF1S45N02LSM
3
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
10
0
25
50
75
100
125
150
40
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
50
175
30
t, RECTANGULAR PULSE DURATION (s)
10
1
10
-3
10
-2
10
-1
10
0
1
10
-5
P
DM
t
1
t
2
SINGLE PULSE
.01
.02
.05
0.1
0.2
0.5
10
-4
2
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x R
JC
x Z
JC
+ T
C
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
50
1
500
10
1
I
D
, DRAIN CURRENT (A)
DC
100
s
100ms
1ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
V
DSS
MAX = 20V
T
C
= 25
o
C, T
J
= MAX RATED
10ms
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
DM
, PEAK CURRENT (A)
500
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
V
GS
= 5V
T
C
= 25
o
C
RFP45N02L, RF1S45N02L, RF1S45N02LSM
4
RFP45N02L, RF1S45N02L, RF1S45N02LSM
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0.01
0.1
10
10
0.001
200
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
100
1
100
0
25
0
1
2
3
5
50
75
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4V
V
GS
= 10V
100
4
V
GS
= 3V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 250
s, T
C
= 25
o
C
0
3.0
4.5
6.0
7.5
1.5
0
25
50
75
175
o
C
PULSE TEST
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
I
D(ON)
, ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
-55
o
C
25
o
C
V
DD
= 15V
0
25
50
75
3.0
3.5
4.0
4.5
r
DS(ON)
, DRAIN T
O
SOURCE
V
GS
, GATE TO SOURCE VOLTAGE (V)
5.0
100
I
D
= 2A
I
D
= 30A
I
D
= 15A
I
D
= 45A
2.5
PULSE DURATION = 250
s
ON RESIST
ANCE (m
)
0
150
200
250
300
0
10
20
30
40
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
350
100
50
t
r
t
f
t
d(OFF)
t
d(ON)
V
DD
= 15V, I
D
= 45A, R
L
= 0.333
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORMALIZED ON RESIST
ANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
PULSE DURATION = 250
s, V
GS
= 5V, I
D
= 45A
RFP45N02L, RF1S45N02L, RF1S45N02LSM
5
RFP45N02L, RF1S45N02L, RF1S45N02LSM
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
200
I
D
= 250
A
2500
500
0
C, CAP
A
CIT
ANCE (pF)
1500
2000
1000
V
GS
= 0V, f = 1MHz
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
20
I
G REF
(
)
I
G AC T
(
)
----------------------
t, TIME (
s)
80
I
G REF
(
)
I
G AC T
(
)
----------------------
5.00
2.50
1.25
0
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
3.75
20
10
5
0
15
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 0.44
I
G(REF)
= 0.5mA
V
GS
= 5V
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
V
DD
= BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
RFP45N02L, RF1S45N02L, RF1S45N02LSM