5-1
Semiconductor
Features
10A, 450V and 500V
r
DS(ON)
= 0.600
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA17435.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM10N45
TO-204AA
RFM10N45
RFM10N50
TO-204AA
RFM10N50
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
September 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
1788.1
RFM10N45,
RFM10N50
10A, 450V and 500V, 0.600 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM10
N45,
RFM10
N50)
/Subject
(10A,
450V
and
500V,
0.600
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFM10N45
RFM10N50
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
450
500
V
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
450
500
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
10
10
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
20
20
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
1.2
W/
o
C
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
260
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
RFM10N45
450
-
-
V
RFM10M50
500
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A, (Figure 8)
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V, V
DS
= 0V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 10A, (Figures 6, 7)
-
-
0.600
Drain to Source On Voltage (Note 2)
V
DS(ON)
V
GS
= 10V, I
D
= 10A
6.0
V
Turn-On Delay Time
t
d(ON)
V
DS
= 250, I
D
5A, V
GS
= 10V, R
G
= 50
,
R
L
= 50
,
(Figures 10, 11, 12)
-
26
60
ns
Rise Time
t
r
-
50
100
ns
Turn-Off Delay Time
t
d(OFF)
-
525
900
ns
Fall Time
t
f
-
105
180
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz, (Figure 9)
-
-
3000
pF
Output Capacitance
C
OSS
-
-
600
pF
Reverse Transfer Capacitance
C
RSS
-
-
200
pF
Thermal Impedance Junction to Case
R
JC
-
-
0.83
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 5A
-
-
1.4
V
Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
s
-
950
-
ns
NOTE:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFM10N45, RFM10N50
5-3
RFM10N45, RFM10N50
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
12
10
8
6
4
2
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
100
1
I
D
, DRAIN CURRENT (A)
10
3
10
I
D
MAX CONTINUOUS
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
V
DSS
(MAX) = 450V (RFM10N45)
DC
V
DSS
(MAX) = 500V (RFM10N50)
1
T
J
= MAX RATED, T
C
= 25
o
C
10
2
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
0
14
24
20
16
0
12
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80
s
8
10V, 8V
V
GS
= 4.0V
6.0V
3.0V
4.5V
4
2
12
5.0V
DUTY CYCLE
2%
3.5V
0
2
3
7
1
0
8
12
20
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
16
4
4
24
5
6
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= 125
o
C
PULSE DURATION = 80
s
DUTY CYCLE
2%
V
DS
= 25V
20
I
D,
DRAIN CURRENT (A)
4
8
12
0
28
1.2
1.0
0.8
0.2
0.6
r
DS(ON)
, DRAIN T
O
SOURCE
T
C
= 125
o
C
0.4
0
16
24
V
GS
= 10V
PULSE DURATION = 80
s
T
C
= 25
o
C
T
C
= -40
o
C
DUTY CYCLE
2%
ON RESIST
ANCE (
)
5-4
RFM10N45, RFM10N50
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
3
2
1
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
2.5
1.5
0
100
NORMALIZED DRAIN T
O
SOURCE
0
50
150
200
I
D
= 10A
V
GS
= 10V
0.5
ON RESIST
ANCE
1.1
0.9
0.7
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED GA
TE
1.0
0.8
0.6
0
200
THRESHOLD V
O
L
T
A
GE
50
100
150
1.2
1.3
1.4
I
D
= 250mA
V
GS
= V
DS
0
20
30
40
50
C, CAP
A
CIT
ANCE (pF)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
4000
3000
2000
0
10
C
ISS
C
OSS
1000
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
GS
+ C
DS
500
375
125
0
20
I
G REF
(
)
I
G AC T
(
)
-------------------------
t, TIME (
s)
80
I
G REF
(
)
I
G AC T
(
)
-------------------------
10
8
6
2
0
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50BV
DSS
V
DD
= 0.25B V
DSS
IN DESCENDING ORDER:
R
L
= 50
I
G(REF)
= 2.1mA
V
GS
= 10V
250
4
DRAIN SOURCE VOLTAGE
V
DD
= BV
DSS
PLATEAU VOLTAGES
SOURCE
VOLTAGE
GATE
V
DD
= BV
DSS
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
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