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Электронный компонент: 10BQ060TRPBF

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SCHOTTKY RECTIFIER
1 Amp
10BQ060
Bulletin PD-2.438 rev. G 0
7/04
1
www.irf.com
Major Ratings and Characteristics
I
F(AV)
Rectangular waveform
1.0
A
V
RRM
60
V
I
FSM
@ tp = 5 s sine
700
A
V
F
@
1.0 Apk, T
J
=125C
0.57
V
T
J
range
- 55 to 150
C
Characteristics
10BQ060
Units
The 10BQ060 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/ Features
Case Styles
10BQ060
SMB
I
F(AV)
= 1 Amp
V
R
= 60V
10BQ060
Bulletin PD-2.438 rev. G 0
7/04
2
www.irf.com
Part number
10BQ060
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
60
Voltage Ratings
V
FM
Max. Forward Voltage Drop (1)
0.6
V
@ 1A
* See Fig. 1
0.76
V
@ 2A
0.57
V
@ 1A
0.69
V
@ 2A
I
RM
Max. Reverse Leakage Current (1)
0.1
mA
T
J
= 25 C
* See Fig. 2
5.0
mA
T
J
= 125 C
C
T
Typical Junction Capacitance
62
pF
V
R
= 5V
DC
(test signal range 100kHz to 1MHz) 25C
L
S
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge
10000
V/ s
(Rated V
R
)
T
J
= 25 C
T
J
= 125 C
V
R
= rated V
R
Electrical Specifications
Parameters
10BQ Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
I
F(AV)
Max. Average Forward Current
1.0
A
50% duty cycle @ T
L
= 103 C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive
700
A
5s Sine or 3s Rect. pulse
Surge Current
42
10ms Sine or 6ms Rect. pulse
E
AS
Non- Repetitive Avalanche Energy
2.0
mJ
T
J
= 25 C, I
AS
= 1A, L = 4mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Parameters
10BQ Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM
applied
T
J
Max. Junction Temperature Range (*) - 55 to 150
C
T
stg
Max. Storage Temperature Range
- 55 to 150
C
R
thJL
Max. Thermal Resistance Junction
36
C/W DC operation
to Lead
(**)
R
thJA
Max. Thermal Resistance Junction
80
C/W
to Ambient
wt
Approximate Weight
0.10 (0.003) g (oz.)
Case Style
SMB
Similar DO-214AA
Device Marking
IR1H
Thermal-Mechanical Specifications
Parameters
10BQ
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
(*) dPtot
1
dTj
Rth( j-a)
10BQ060
Bulletin PD-2.438 rev. G 0
7/04
3
www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Instantaneous Forward Current - I
F
(A)
Forward Voltage Drop - V
FM
(V)
Reverse Current - I
R
(mA)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(p F)
Thermal Impedance Z
thJC
(C/W)
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
0.1
1
10
0.2
0.4
0.6
0.8
1
Tj = 150C
Tj = 125C
Tj = 25C
0.0001
0.001
0.01
0.1
1
10
0
10
20
30
40
50
60
125C
100C
75C
50C
25C
Tj = 150C
10
100
1000
0
10
20
30
40
50
60
Tj = 25C
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Single Pulse
(Thermal Resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
.
2. Peak Tj = Pdm x ZthJC + Tc
.
10BQ060
Bulletin PD-2.438 rev. G 0
7/04
4
www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
Average Forward Current - I
F(AV)
(A)
Allowable Lead Temperature (C)
Average Forward Current - I
F(AV)
(A)
Average Power Loss (Watts)
Square Wave Pulse Duration - T
p
(Microsec)
Non-Repetitive Surge Current - I
FSM
(A)
60
70
80
90
100
110
120
130
140
150
160
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
DC
Square wave (D = 0.50)
Rated Vr applied
see note (2)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
0.3
0.6
0.9
1.2
1.5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
10
100
1000
10000
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
10BQ060
Bulletin PD-2.438 rev. G 0
7/04
5
www.irf.com
3.80 (.150)
3.30 (.130)
4.70 (.185)
4.10 (.161)
2.15 (.085)
1.80 (.071)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
4.0 (.157)
2.0 TYP.
(.079 TYP.)
2.5 TYP.
(.098 TYP.)
SOLDERING PAD
CATHODE
ANODE
1
2
1
2
POLARITY
PART NUMBER
4.2 (.165)
IR LOGO
YYWWX
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
2nd digit of the YEAR
SITE ID
WEEK
CURRENT
VOLTAGE
IR1H
Device Marking: IR1H
Dimensions in millimeters and (inches)
Outline SMB
For recommended footprint and soldering techniques refer to application note #AN-994
Outline Table
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.