1
SURFACE MOUNTABLE
PHASE CONTROL SCR
Preliminary Data Sheet I2145 12/97
SAFE
IR
Series
10TTS08S
V
T
< 1.15V @ 6.5A
I
TSM
= 140A
V
RRM
= 800V
Major Ratings and Characteristics
D
2
PAK (SMD-220)
I
T(AV)
Sinusoidal
6.5
A
waveform
I
RMS
10
A
V
RRM
/ V
DRM
800
V
I
TSM
140
A
V
T
@ 6.5 A, T
J
= 25C
1.15
V
dv/dt
150
V/s
di/dt
100
A/s
T
J
range
- 40 to 125
C
Characteristics
10TTS08S Units
Output Current in Typical Applications
T
A
= 55C, T
J
= 125C, footprint 300mm
2
NEMA FR-4 or G10 glass fabric-based epoxy
2.5
3.5
with 4 oz (140m) copper
Aluminum IMS, R
thCA
= 15C/W
6.3
9.5
A
Aluminum IMS with heatsink, R
thCA
= 5C/W
14.0
18.5
Applications
Single-phase Bridge
Three-phase Bridge Units
Description/Features
The 10TTS08S
SAFE
IR
series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125 C junction
temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi-
cal package outlines.
Package Outline
2
10TTS08S
SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
V
RRM
, maximum
V
DRM
, maximum
I
RRM
/
I
DRM
Part Number
peak reverse voltage
peak direct voltage
125C
V
V
mA
10TTS08S
800
800
1.0
Voltage Ratings
I
T(AV)
Max. Average On-state Current
6.5
A
@ T
C
= 112 C, 180 conduction half sine wave
I
T(RMS)
Max. RMS On-state Current
10
I
TSM
Max. Peak One Cycle Non-Repetitive
120
A
10ms Sine pulse, rated V
RRM
applied, T
J
= 125C
Surge Current
140
10ms Sine pulse, no voltage reapplied, T
J
= 125C
I
2
t
Max. I
2
t for fusing
72
A
2
s
10ms Sine pulse, rated V
RRM
applied, T
J
= 125C
100
10ms Sine pulse, no voltage reapplied, T
J
= 125C
I
2
t
Max. I
2
t for fusing
1000
A
2
s
t = 0.1 to 10ms, no voltage reapplied, T
J
= 125C
V
TM
Max. On-state Voltage Drop
1.15
V
@ 6.5A, T
J
= 25C
r
t
On-state slope resistance
17.3
m
T
J
= 125C
V
T(TO)
Threshold Voltage
0.85
V
I
RM
/I
DM
Max.Reverse and Direct
0.05
mA
T
J
= 25 C
Leakage Current
1.0
T
J
= 125 C
I
H
Typ. Holding Current
30
mA
Anode Supply = 6V, Resistive load, Initial I
T
=1A
I
L
Max. Latching Current
50
mA
Anode Supply = 6V, Resistive load
dv/dt Max. rate of rise of off-state Voltage
150
V/s
T
J
= 25C
di/dt
Max. rate of rise of turned-on Current
100
A/s
Absolute Maximum Ratings
Parameters
10TTS08S Units
Conditions
V
R
= rated V
RRM
/ V
DRM
3
10TTS08S
SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
Triggering
P
GM
Max. peak Gate Power
8.0
W
P
G(AV)
Max. average Gate Power
2.0
+ I
GM
Max. paek positive Gate Current
1.5
A
- V
GM
Max. paek negative Gate Voltage
10
V
I
GT
Max. required DC Gate Current
20
mA
Anode supply = 6V, resistive load, T
J
= - 65C
to trigger
15
Anode supply = 6V, resistive load, T
J
= 25C
10
Anode supply = 6V, resistive load, T
J
= 125C
V
GT
Max. required DC Gate Voltage
1.2
V
Anode supply = 6V, resistive load, T
J
= - 65C
to trigger
1
Anode supply = 6V, resistive load, T
J
= 25C
0.7
Anode supply = 6V, resistive load, T
J
= 125C
V
GD
Max. DC Gate Voltage not to trigger
0.2
T
J
= 125C, V
DRM
= rated value
I
GD
Max. DC Gate Current not to trigger
0.1
mA
T
J
= 125C, V
DRM
= rated value
Parameters
10TTS08S Units
Conditions
Switching
Parameters
10TTS08S
Units
Conditions
t
gt
Typical turn-on time
0.8
s
T
J
= 25C
t
rr
Typical reverse recovery time
3
T
J
= 125C
t
q
Typical turn-off time
100
T
J
Max. Junction Temperature Range
- 40 to 125
C
T
stg
Max. Storage Temperature Range
- 40 to 125
C
Soldering Temperature
240
C
for 10 seconds (1.6mm from case)
R
thJC
Max. Thermal Resistance Junction
1.5
C/W
DC operation
to Case
R
thJA
Typ. Thermal Resistance Junction
40
C/W
to Ambient (PCB Mount)**
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Case Style
D
2
Pak (SMD-220)
Thermal-Mechanical Specifications
Parameters
10TTS08S Units
Conditions
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140m) copper 40C/W
For recommended footprint and soldering techniques refer to application note #AN-994
4
10TTS08S
SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Rating Characteristics
105
110
115
120
125
0
1
2
3
4
5
6
7
30
60
90
120
180
M
a
x
i
m
u
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
Conduction Angle
Average On-state Current (A)
10TTS08
R (DC) = 1.5 K/W
thJC
105
110
115
120
125
0
2
4
6
8
10
12
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
m
u
m
A
l
l
o
w
a
b
l
e C
a
s
e
Te
m
p
er
a
t
u
r
e (
C
)
Conduction Period
10TTS08
R (DC) = 1.5 K/W
thJC
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
RMS Limit
Conduction Angle
M
a
x
i
m
u
m
A
v
er
a
g
e On
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
180
120
90
60
30
10TTS08
T = 125C
J
0
2
4
6
8
10
12
0
2
4
6
8
10
12
DC
180
120
90
60
30
RMS Limit
Conduction Period
M
a
x
i
m
u
m
A
v
er
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
10TTS08
T = 125C
J
60
70
80
90
100
110
120
130
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
P
e
ak
Hal
f S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
nt
(
A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
10TTS08
50
60
70
80
90
100
110
120
130
140
150
0.01
0.1
1
P
e
ak
Hal
f S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
10TTS08
5
10TTS08S
SAFE
IR
Series
Preliminary Data Sheet I2145 12/97
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
1
10
100
1000
0.5
1
1.5
2
2.5
3
3.5
T = 25C
J
In
s
t
a
n
t
a
n
e
o
u
s
O
n
-
s
t
a
t
e
C
u
rre
n
t
(
A
)
Instantaneous On-stat e Voltage (V)
T = 125C
J
10TTS08
0.01
0.1
1
10
0.0001
0.001
0. 01
0.1
1
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
th
J
C
Tr
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
Z
(
C
/
W
)
10TTS08
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