ChipFind - документация

Электронный компонент:

Скачать:  PDF   ZIP
55 A
90 A
110 A
THREE PHASE CONTROLLED BRIDGE
Bulletin I27503 08/97
1
MT..KB SERIES
Power Modules
www.irf.com
53MT.KB 93MT.KB 113MT.KB
Parameters
52MT.KB 92MT.KB 112MT.KB Units
51MT.KB 91MT.KB 111MT.KB
I
O
55
90
110
A
@ T
C
85
85
85
C
I
FSM
@ 50Hz
390
950
1130
A
@ 60Hz
410
1000
1180
A
I
2
t
@ 50Hz
770
4525
6380
A
2
s
@ 60Hz
700
4130
5830
A
2
s
I
2
t
7700
45250
63800
A
2
s
V
RRM
range
800 to 1600
V
T
STG
range
- 40 to 125
C
T
J
range
- 40 to 125
C
Major Ratings and Characteristics
Features
Package fully compatible with the industry standard INT-A-pak
power modules series
High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio
4000 V
RMS
isolating voltage
UL E78996 approved
Description
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose
and heavy duty applications.
www.irf.com
53-93-113MT..KB Series
2
Bulletin I27503 08/97
53MT.KB
93MT.KB 113MT.KB
Parameter
52MT.KB
92MT.KB 112MT.KB Units Conditions
51MT.KB
91MT.KB 111MT.KB
I
O
Maximum DC output current
55
90
110
A
120 Rect conduction angle
@ Case temperature
85
85
85
C
I
TSM
Maximum peak, one-cycle
390
950
1130
A
t = 10ms
No voltage
forward, non-repetitive
410
1000
1180
t = 8.3ms
reapplied
on state surge current
330
800
950
t = 10ms
100% V
RRM
345
840
1000
t = 8.3ms
reapplied
Initial
I
2
t
Maximum I
2
t for fusing
770
4525
6380
A
2
s
t = 10ms
No voltage
T
J
= T
J
max.
700
4130
5830
t = 8.3ms
reapplied
540
3200
4510
t = 10ms
100% V
RRM
500
2920
4120
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
7700
45250
63800
A
2
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
1.17
1.09
1.04
V
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), @ T
J
max.
voltage
V
T(TO)2
High level value of threshold
1.45
1.27
1.27
(I >
x I
T(AV)
), @ T
J
max.
voltage
r
t1
Low level value on-state
12.40
4.10
3.93
m
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), @ T
J
max.
slope resistance
r
t2
High level value on-state
11.04
3.59
3.37
(I >
x I
T(AV)
), @ T
J
max.
slope resistance
V
TM
Maximum on-state voltage drop
2.68
1.65
1.57
V
I
pk
= 150A, T
J
= 25C
t
p
= 400s single junction
di/dt
Max. non-repetitive rate
150
A/s
T
J
= 25
o
C, from 0.67 V
DRM
, I
TM
=
x I
T(AV)
,
of rise of turned on current
I
g
= 500mA, t
r
< 0.5 s, t
p
> 6 s
I
H
Max. holding current
200
T
J
= 25
o
C, anode supply = 6V,
mA
resistive load, gate open circuit
I
L
Max. latching current
400
T
J
= 25
o
C, anode supply = 6V, resistive load
Forward Conduction
Voltage
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
I
RRM
/I
DRM
max.
Type number
Code
repetitive peak
non-repetitive peak
peak off-state voltage
@ T
J
= 125C
reverse voltage
reverse voltage
gate open circuit
V
V
V
mA
80
800
900
800
100
1000
1100
1000
53/52/51MT..KB
120
1200
1300
1200
10
140
1400
1500
1400
160
1600
1700
1600
80
800
900
800
93/92/91MT..KB
100
1000
1100
1000
113/112/111MT..KB
120
1200
1300
1200
20
140
1400
1500
1400
160
1600
1700
1600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
www.irf.com
53-93-113MT..KB Series
3
Bulletin I27503 08/97
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
V
INS
RMS isolation voltage
4000
V
T
J
= 25
o
C all terminal shorted
f = 50Hz, t = 1s
dv/dt
Max. critical rate of rise
500
V/s
T
J
= T
J
max., linear to 0.67 V
DRM
,
of off-state voltage (*)
gate open circuit
Blocking
(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.
Triggering
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
P
GM
Max. peak gate power
10
W
T
J
= T
J
max.
P
G(AV)
Max. average gate power
2.5
I
GM
Max. peak gate current
2.5
A
-V
GT
Max. peak negative
10
V
gate voltage
V
GT
Max. required DC gate
4.0
V
T
J
= - 40C
voltage to trigger
2.5
T
J
= 25C
Anode supply = 6V, resistive load
1.7
T
J
= 125C
I
GT
Max. required DC gate
270
T
J
= - 40C
current to trigger
150
mA
T
J
= 25C
Anode supply = 6V, resistive load
80
T
J
= 125C
V
GD
Max. gate voltage
0.25
V
@ T
J
= T
J
max., rated V
DRM
applied
that will not trigger
I
GD
Max. gate current
6
mA
that will not trigger
Thermal and Mechanical Specifications
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
T
J
Max. junction operating
-40 to 125
C
temperature range
T
stg
Max. storage temperature
-40 to 125
C
range
R
thJC
Max. thermal resistance,
0.18
0.14
0.12
K/W
DC operation per module
junction to case
1.07
0.86
0.70
DC operation per junction
0.19
0.15
0.12
120 Rect condunction angle per module
1.17
0.91
0.74
120 Rect condunction angle per junction
R
thCS
Max. thermal resistance,
0.03
K/W
Per module
case to heatsink
Mounting surface smooth, flat an greased
T
Mounting
to heatsink
4 to 6
Nm
torque 10%
to terminal
3 to 4
wt
Approximate weight
225
g
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
www.irf.com
53-93-113MT..KB Series
4
Bulletin I27503 08/97
1
2
3
1
-
Current rating code: 5 = 55 A (Avg)
9 = 90 A (Avg)
11 = 110 A (Avg)
2
-
Circuit configuration code: 3 = Full-controlled bridge
2 = Positive half-controlled bridge
1 = Negative half-controlled bridge
3
-
Essential part number
4
-
Voltage code: Code x 10 = V
RRM
(See Voltage Ratings Table)
5
-
Generation
II
6
-
Critical dv/dt: None = 500V/s (Standard value)
S90
= 1000V/s (Special selection)
4
Device Code
Ordering Information Table
5
6
11
3
MT
160
K
B
S90
Sinusoidal conduction @ T
J
max.
Rectangular conduction @ T
J
max.
Devices
Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
53/52/51MT.KB
0.072
0.085
0.108
0.152
0.233
0.055
0.091
0.117
0.157
0.236
K/W
93/92/91MT.KB
0.033
0.039
0.051
0.069
0.099
0.027
0.044
0.055
0.071
0.100
113/112/111MT.KB
0.027
0.033
0.042
0.057
0.081
0.023
0.037
0.046
0.059
0.082
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
NOTE: To order the Optional Hardware see Bulletin I27900
negative half-controlled bridge
(51, 91, 111MT..KB)
positive half-controlled bridge
(52, 92, 112MT..KB)
full-controlled bridge
(53, 93, 113MT..KB)
www.irf.com
53-93-113MT..KB Series
5
Bulletin I27503 08/97
Outline Table (with optional barriers)
All dimensions in millimeters (inches)
Outline Table (without optional barriers)
All dimensions in millimeters (inches)