ChipFind - документация

Электронный компонент: 150EBU04

Скачать:  PDF   ZIP
1
Case Styles
PowIRtab
150EBU04
Bulletin PD-20744 rev. A 01/01
t
rr
= 60ns
I
F(AV)
= 150Amp
V
R
= 400V
Features
Description/ Applications
Absolute Maximum Ratings
Ultrafast Soft Recovery Diode
V
R
Cathode to Anode Voltage
400
V
I
F(AV)
Continuous Forward Current, T
C
= 104C
150
A
I
FSM
Single Pulse Forward Current, T
C
= 25C
1500
I
FRM
!
Maximum Repetitive Forward Current
300
T
J
,
T
STG
Operating Junction and Storage Temperatures
- 55 to 175
C
Parameters
Max
Units
Ultrafast Recovery
175C Operating Junction Temperature
Benefits
Reduced RFI and EMI
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
!
"
Square Wave, 20kHz
150EBU04
Bulletin PD-20744 rev. A 01/01
2
V
BR
,
V
r
Breakdown Voltage,
400
-
-
V
I
R
= 200A
Blocking Voltage
V
F
Forward Voltage
-
1.07
1.3
V
I
F
= 150A
-
0.9
1.1
V
I
F
= 150A, T
J
= 175C
-
0.96 1.17
V
I
F
= 150A, T
J
= 125C
I
R
Reverse Leakage Current
-
-
50
A
V
R
= V
R
Rated
-
-
4
mA
T
J
= 150C, V
R
= V
R
Rated
C
T
Junction Capacitance
-
100
-
pF
V
R
= 400V
L
S
Series Inductance
-
3.5
-
nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
t
rr
Reverse Recovery Time
-
-
60
ns
I
F
= 1.0A, di
F
/dt = 200A/s, V
R
= 30V
-
93
-
T
J
= 25C
-
172
-
T
J
= 125C
I
RRM
Peak Recovery Current
-
11
-
A
T
J
= 25C
-
20
-
T
J
= 125C
Q
rr
Reverse Recovery Charge
-
490
-
nC
T
J
= 25C
-
1740
-
T
J
= 125C
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
I
F
= 150A
V
R
= 200V
di
F
/dt = 200A/s
Parameters
Min Typ Max Units Test Conditions
Parameters
Min
Typ
Max
Units
R
thJC
Thermal Resistance, Junction to Case
0.35
K/W
R
thCS
#
Thermal Resistance, Case to Heatsink
0.2
Wt
Weight
5.02
g
0.18
(oz)
T
Mounting Torque
1.2
2.4
N * m
10
20
lbf.in
Thermal - Mechanical Characteristics
#"
Mounting Surface, Flat, Smooth and Greased
Bulletin PD-20744 rev. A 01/01
3
150EBU04
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
Reverse Current - I
R
(A)
10
100
1000
10000
10
100
1000
T = 25C
J
.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC + Tc
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
0.001
0.01
0.1
1
10
100
1000
0
100
200
300
400
25C
T = 175C
J
125C
1
10
100
1000
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
T = 175C
T = 125C
T = 25C
J
J
J
150EBU04
Bulletin PD-20744 rev. A 01/01
4
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
(3) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
Average Power Loss ( Watts )
trr ( ns )
Qrr ( nC )
Average Forward Current - I
F
(AV)
(A)
Allowable Case Temperature (C)
Average Forward Current - I
F
(AV)
(A)
di
F
/dt (A/s )
di
F
/dt (A/s )
Fig. 8 - Typical Stored Charge vs. di
F
/dt
Fig. 7 - Typical Reverse Recovery time vs. di
F
/dt
40
60
80
00
20
40
60
80
0
50
100
150
200
250
DC
Square wave (D = 0.50)
Rated Vr applied
see note (3)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
100
1000
IF = 150A
IF = 75A
Vr = 200V
Tj = 125C
Tj = 25C
0
50
100
150
200
250
300
0
50
100
150
200
250
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
50
100
150
200
250
100
1000
IF = 150A
IF = 75A
Vr = 200V
Tj = 125C
Tj = 25C
Bulletin PD-20744 rev. A 01/01
5
150EBU04
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
Fig. 9- Reverse Recovery Parameter Test Circuit
Reverse Recovery Circuit
di
F
/dt
di
F
/dt
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Q rr =
t rr x I RRM
2
150EBU04
Bulletin PD-20744 rev. A 01/01
6
Dimensions in millimeters and (inches)
Outline Table
Ordering Information Table
Device Code
1
5
2
4
3
1
-
Current Rating
(150 = 150A)
2
-
Single Diode
3
-
PowIRtab
(Ultrafast/ Hyperfast only)
4
-
Ultrafast Recovery
5
-
Voltage Rating
(04 = 400V)
150
E
B
U
04
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/01