Anode
1
3
Anode
Common
Cathode
2
Anode
1
3
2
Base
Common
Cathode
2
Anode
Common
Cathode
Anode
1
3
2
Base
Common
Cathode
2
Anode
Common
Cathode
Anode
1
3
2
Base
Common
Cathode
2
Anode
Common
Cathode
1
Bulletin PD-20769 rev. A 08/03
t
rr
= 35ns max.
I
F(AV)
= 20Amp
V
R
= 300V
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175C Operating Junction Temperature
Features
Hyperfast Rectifier
20CTH03
20CTH03S
20CTH03-1
20CTH03FP
20CTH03
TO-220AB
Case Styles
20CTH03S
D
2
PAK
20CTH03-1
TO-262
20CTH03FP
TO-220 FULLPACK
Description/ Applications
International Rectifier's 300V series are the state of the art Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and Hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
V
RRM
Peak Repetitive Reverse Voltage
300
V
I
F(AV)
Average Rectified Forward Current
@ T
C
= 160C Per Diode
10
A
@ T
C
= 135C (FULLPACK)
Per Diode
Per Device
20
I
FSM
Non Repetitive Peak Surge Current @ T
J
= 25C
120
T
J
,
T
STG
Operating Junction and Storage Temperatures
- 65 to 175
C
Parameters
Max
Units
www.irf.com
2
20CTH03, 20CTH03S, 20CTH03-1, 20CTH03FP
Bulletin PD-20769 rev. A
08/03
www.irf.com
V
BR
,
V
r
Breakdown Voltage,
300
-
-
V
I
R
= 100A
Blocking Voltage
V
F
Forward Voltage
-
1.05 1.25
V
I
F
= 10A, T
J
= 25C
-
0.85 0.95
V
I
F
= 10A, T
J
= 125C
I
R
Reverse Leakage Current
-
-
20
A
V
R
= V
R
Rated
-
6
200
A
T
J
= 125C, V
R
= V
R
Rated
C
T
Junction Capacitance
-
30
-
pF
V
R
= 300V
L
S
Series Inductance
-
8
-
nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max
Test Conditions
Units
t
rr
Reverse Recovery Time
-
-
35
ns
I
F
= 1A, di
F
/dt = 50A/s, V
R
= 30V
-
-
30
I
F
= 1A, di
F
/dt = 100A/s, V
R
= 30V
-
31
-
T
J
= 25C
-
42
-
T
J
= 125C
I
RRM
Peak Recovery Current
-
2.4
-
A
T
J
= 25C
-
5.6
-
T
J
= 125C
Q
rr
Reverse Recovery Charge
-
36
-
nC
T
J
= 25C
-
120
-
T
J
= 125C
Dynamic Recovery Characteristics @ T
C
= 25C (unless otherwise specified)
Parameters
Min Typ Max
Test Conditions
Units
Parameters
Min
Typ
Max
Units
T
J
Max. Junction Temperature Range
-
-
175
C
T
Stg
Max. Storage Temperature Range
- 65
-
175
R
thJC
Thermal Resistance, Junction to Case
Per Diode
-
-
1.5
C/W
Fullpack (Per Diode)
-
-
3.9
Thermal - Mechanical Characteristics
I
F
= 10A
di
F
/dt = 200A/s
V
R
= 200V
3
20CTH03, 20CTH03S, 20CTH03-1, 20CH03FP
Bulletin PD-20769 rev. A
08/03
www.irf.com
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
Reverse Current - I
R
(mA)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1
10
100
0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
Tj = 175C
Tj = 125C
Tj = 25C
10
100
1000
0
50
100 150 200 250 300
T = 25C
J
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
0.01
0.1
1
10
100
50
100
150
200
250
300
125C
Tj = 175C
25C
50C
100C
150C
75C
4
20CTH03, 20CTH03S, 20CTH03-1, 20CTH03FP
Bulletin PD-20769 rev. A
08/03
www.irf.com
Fig. 6 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 7 - Max. Allowable Case Temperature
Vs. Average Forward Current (FULLPACK)
Average Forward Current - I
F(AV)
(A)
Allowable Case Temperature (C)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Max. Thermal Impedance Z
thJC
Characteristics (FULLPACK)
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
Fig. 8 - Forward Power Loss Characteristics
Average Forward Current - I
F
(AV)
(A)
Average Power Loss ( Watts )
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D)
(see Fig. 8);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D);
I
R
@ V
R1
= rated V
R
Allowable Case Temperature (C)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
140
150
160
170
180
0
2
4
6
8
10 12 14 16
DC
see note (2)
Square wave (D = 0.50)
Rated Vr applied
100
110
120
130
140
150
160
170
180
0
2
4
6
8
10 12 14 16
DC
see note (2)
Square wave (D = 0.50)
Rated Vr applied
0
4
8
12
16
20
0
2
4
6
8
10 12 14 16
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
5
20CTH03, 20CTH03S, 20CTH03-1, 20CH03FP
Bulletin PD-20769 rev. A
08/03
www.irf.com
Fig. 10 - Typical Stored Charge vs. di
F
/dt
Fig. 9 - Typical Reverse Recovery vs. di
F
/dt
trr ( ns )
Qrr ( nC )
di
F
/dt (A/s )
di
F
/dt (A/s )
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
Fig. 11- Reverse Recovery Parameter Test Circuit
Reverse Recovery Circuit
di
F
/dt
10
100
100
1000
IF = 10A
Tj = 125C
Tj = 25C
Vr = 200V
10
100
1000
100
1000
IF = 10A
Vr = 200V
Tj = 125C
Tj = 25C
PDF 
ZIP