20MT120UF
V
CES
= 1200V
I
C
= 40A
T
C
= 25C
UltraFast Non Punch Through (NPT)
Technology
Positive V
CE(ON)
Temperature Coefficient
10s Short Circuit Capability
HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
Low Diode V
F
Square RBSOA
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
UL approved (File E78996)
Features
Absolute Maximum Ratings
"FULL-BRIDGE" IGBT MTP
V
CES
Collector-to-Emitter Breakdown Voltage
1200
V
I
C
Continuos Collector Current
@ T
C
= 25C
40
A
@ T
C
= 106C
20
I
CM
Pulsed Collector Current
100
I
LM
Clamped Inductive Load Current
100
I
F
Diode Continuous Forward Current
@ T
C
= 106C
25
I
FM
Diode Maximum Forward Current
100
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
P
D
Maximum Power Dissipation (only IGBT)
@ T
C
= 25C
240
W
@ T
C
= 100C
96
Parameters
Max
Units
UltraFast NPT IGBT
Optimized for Welding, UPS and SMPS
Applications
Rugged with UltraFast Performance
Benchmark Efficiency above 20KHz
Outstanding ZVS and Hard Switching
Operation
Low EMI, requires Less Snubbing
Excellent Current Sharing in Parallel
Operation
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal
Resistance
Benefits
M
MTP
5/
I27124 rev. D 02/03
1
www.irf.com
2
20MT120UF
I27124 rev. D 02/03
www.irf.com
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/ Temperature Coeff. of
+1.3
V/C
V
GE
= 0V, I
C
= 3mA (25-125C)
T
J
Breakdown Voltage
V
CE(ON)
Collector-to-Emitter Saturation Voltage
3.29
3.59
V
V
GE
= 15V, I
C
= 20A
4.42
4.66
V
GE
= 15V, I
C
= 40A
3.87
4.11
V
GE
= 15V, I
C
= 20A T
J
= 125C
5.32
5.70
V
GE
= 15V, I
C
= 40A T
J
= 125C
3.99
4.27
V
GE
= 15V, I
C
= 20A T
J
= 150C
V
GE(th)
Gate Threshold Voltage
4
6
V
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/ Temperature Coeff. of
-14
mV/C V
CE
= V
GE
, I
C
= 3mA (25-125C)
T
J
Threshold Voltage
g
fe
Transconductance
17.5
S
V
CE
= 50V, I
C
= 20A, PW = 80s
I
CES
Zero Gate Voltage Collector Current
(1)
250
A
V
GE
= 0V, V
CE
= 1200V, T
J
= 25C
0.7
3.0
mA
V
GE
= 0V, V
CE
= 1200V, T
J
= 125C
2.9
9.0
V
GE
= 0V, V
CE
= 1200V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
250
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Q
g
Total Gate Charge (turn-on)
176
264
nC
I
C
= 20A
Q
ge
Gate-Emitter Charge (turn-on)
19
30
V
CC
= 600V
Q
gc
Gate-Collector Charge (turn-on)
89
134
V
GE
= 15V
E
on
Turn-On Switching Loss
513
770
J
V
CC
= 600V, I
C
= 20A
E
off
Turn-Off Switching Loss
402
603
V
GE
= 15V, R
g
= 5
, L = 200H
E
tot
Total Switching Loss
915
1373
T
J
= 25C, Energy losses include tail
and diode reverse recovery
E
on
Turn-On Switching Loss
930
1395
J
V
CC
= 600V, I
C
= 20A
E
off
Turn-Off Switching Loss
610
915
V
GE
= 15V, R
g
= 5
, L = 200H
E
tot
Total Switching Loss
1540
2310
T
J
= 125C, Energy losses include tail
and diode reverse recovery
C
ies
Input Capacitance
2530
3790
pF
V
GE
= 0V
C
oes
Output Capacitance
344
516
V
CC
= 30V
C
res
Reverse Transfer Capacitance
78
117
f = 1.0 MHz
RBSOA
Reverse Bias Safe Operating Area
full square
T
J
= 150C, I
C
= 120A
V
CC
= 1000V, V
p
= 1200V
R
g
= 5
, V
GE
= +15V to 0V
SCSOA
Short Circuit Safe Operating Area
10
s
T
J
= 150C
V
CC
= 900V, V
p
= 1200V
R
g
= 5
, V
GE
= +15V to 0V
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
(1)
I
CES
includes also opposite leg overall leakage
3
20MT120UF
I27124 rev. D 02/03
www.irf.com
V
FM
Diode Forward Voltage Drop
2.48
2.94
V
I
C
= 20A
3.28
3.90
I
C
= 40A
2.44
2.84
I
C
= 20A, T
J
= 125C
3.45
4.14
I
C
= 40A, T
J
= 125C
2.21
2.93
I
C
= 20A, T
J
= 150C
E
rec
Reverse Recovery Energy of the Diode
420
630
J
V
GE
= 15V, R
g
= 5
, L = 200H
trr
Diode Reverse Recovery Time
98
150
ns
V
CC
= 600V, I
C
= 20A
Irr
Peak Reverse Recovery Current
33
50
A
T
J
= 125C
Thermal- Mechanical Specifications
T
J
Operating Junction Temperature Range
- 40
150
C
T
STG
Storage Temperature Range
- 40
125
R
thJC
Junction-to-Case
IGBT
0.35
0.52
C/ W
Diode
0.40
0.61
R
thCS
Case-to-Sink
Module
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance (
external shortest distance in air
5.5
mm
between two terminals)
Creepage (
shortest distance along external
8
surface of the insulating material between 2 terminals
)
T
Mounting Torque
(2)
3 10%
Nm
Wt
Weight
66
g (oz)
Parameters
Min
Typ
Max
Units
Diode Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
(2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
4
20MT120UF
I27124 rev. D 02/03
www.irf.com
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T
C
= 25C; T
J
150C
Fig. 4 - Reverse Bias SOA
T
J
= 150C; V
GE
=15V
0
20
40
60
80
100 120 140 160
TC (C)
0
50
100
150
200
250
P
tot
(W)
0
20
40
60
80
100 120 140 160
TC (C)
0
10
20
30
40
50
I C
(A)
10
100
1000
10000
VCE (V)
1
10
100
1000
I C
(A)
1
10
100
1000
10000
VCE (V)
0.01
0.1
1
10
100
1000
I C
(A)
10 s
100 s
1ms
DC
5
20MT120UF
I27124 rev. D 02/03
www.irf.com
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 25C; tp = 80s
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= -40C; tp = 80s
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80s
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 125C; tp = 80s
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
I CE
(A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
I CE
(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
I CE
(A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0
1.0
2.0
3.0
4.0
5.0
VF (V)
0
20
40
60
80
100
120
I F
(A
)
-40C
25C
125C
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