Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
JANTX2N6845
JANTXV2N6845
Features:
s
Avalanche Energy Rating
s
Dynamic dv/dt Rating
s
Simple Drive Requirements
s
Ease of Paralleling
s
Hermetically Sealed
P-CHANNEL
Provisional Data Sheet No. PD-9.552B
-100 Volt, 0.60
HEXFET
HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
JANTX2N6845
JANTXV2N6845
[REF:MIL-PRF-19500/563]
[GENERIC:IRFF9120]
HEXFET
POWER MOSFET
Absolute Maximum Ratings
Parameter
JANTX2N6845, JANTXV2N6845
Units
ID @ VGS = -10V, TC = 25C Continuous Drain Current
-4.0
ID @ VGS = -10V, TC = 100C Continuous Drain Current
-2.6
IDM
Pulsed Drain Current
-16
PD @ TC = 25C
Max. Power Dissipation
20
W
Linear Derating Factor
0.16
W/K
VGS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
Weight
0.98 (typical)
g
o
C
A
-4.0A
0.60
-100V
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Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
RthJC
Junction-to-Case
--
--
6.25
RthJA
Junction-to-Ambient
--
--
175
K/W
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
-4.0
Modified MOSFET symbol showing the
ISM
Pulse Source Current (Body Diode)
--
--
-16
integral reverse p-n junction rectifier.
VSD
Diode Forward Voltage
--
--
-4.8
V
T
j
= 25C, IS = -4.0A, VGS = 0V
trr
Reverse Recovery Time
--
--
200
ns
Tj = 25C, IF = -4.0A, di/dt
-100A/
s
QRR
Reverse Recovery Charge
--
--
3.1
C
VDD
-50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min.
Typ. Max. Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
--
--
V
VGS = 0V, ID = -1.0 mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
-0.10
--
V/C
Reference to 25C, ID = -1.0 mA
Voltage
RDS(on)
Static Drain-to-Source
--
--
0.60
VGS = -10V, ID = -2.6A
On-State Resistance
--
--
0.69
VGS = -10V, ID = -4.0A
VGS(th)
Gate Threshold Voltage
-2.0
--
-4.0
V
VDS = VGS, ID = -250
A
gfs
Forward Transconductance
1.25
--
--
S (
)
VDS > -15V, IDS = -2.6A
IDSS
Zero Gate Voltage Drain Current
--
--
-25
VDS = 0.8 x Max Rating,VGS = 0V
--
--
-250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
--
--
100
VGS = 20V
Qg
Total Gate Charge
4.3
--
16.3
VGS = -10V, ID = -4.0A
Qgs
Gate-to-Source Charge
1.3
--
4.7
VDS = Max. Rating x 0.5
Qgd
Gate-to-Drain ("Miller") Charge
1.0
--
9.0
see figures 6 and 13
td(on)
Turn-On Delay Time
--
--
60
VDD = -50V, ID = -4.0A,
tr
Rise Time
--
--
100
RG = 7.5
,
VGS = -10V
td(off)
Turn-Off Delay Time
--
--
50
tf
Fall Time
--
--
70
see figure 10
LD
Internal Drain Inductance
--
5.0
--
LS
Internal Source Inductance
--
15
--
Ciss
Input Capacitance
--
380
--
VGS = 0V, VDS = -25V
Coss
Output Capacitance
--
170
--
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
--
45
--
see figure 5
JANTX2N6845, JANTXV2N6845 Device
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
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Fig. 1 -- Typical Output Characteristics
T
C
= 25C
Fig. 2 -- Typical Output Characteristics
T
C
= 150C
Fig. 3 -- Typical Transfer Characteristics
Fig. 4 -- Normalized On-Resistance Vs.Temperature
Fig. 5 -- Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 -- Typical Gate Charge Vs. Gate-to-Source
Voltage
JANTX2N6845, JANTXV2N6845 Device
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JANTX2N6845, JANTXV2N6845 Device
Fig. 10b -- Switching Time Waveforms
Fig. 10a -- Switching Time Test Circuit
Fig. 8 -- Maximum Safe Operating Area
Fig. 9 -- Maximum Drain Current Vs. Case Temperature
Fig. 7 -- Typical Source-to-Drain Diode Forward
Voltage
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Fig. 13a -- Gate Charge Test Circuit
Fig. 12a -- Unclamped Inductive Test Circuit
Fig. 12b -- Unclamped Inductive Waveforms
Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
JANTX2N6845, JANTXV2N6845 Device
Fig. 13b -- Basic Gate Charge Waveform
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