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Электронный компонент: 30BQ040PbF

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SCHOTTKY RECTIFIER
3 Amp
30BQ040
Bulletin PD-2.439 rev. G 07/04
1
www.irf.com
Major Ratings and Characteristics
I
F(AV)
Rectangular
3.0
A
waveform
V
RRM
40
V
I
FSM
@ t
p
= 5 s sine
2000
A
V
F
@
3.0 Apk, T
J
= 125C
0.43
V
T
J
range
- 55 to 150
C
Characteristics
30BQ040 Units
The 30BQ040 surface-mount Schottky rectifier has been de-
signed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/ Features
Case Styles
30BQ040
SMC
I
F(AV)
= 3.0Amp
V
R
= 40V
30BQ040
Bulletin PD-2.439 rev. G 07/04
2
www.irf.com
Parameters
30BQ Units Conditions
V
FM
Max. Forward Voltage Drop (1)
0.53
V
@ 3A
0.68
V
@ 6A
0.43
V
@ 3A
0.57
V
@ 6A
I
RM
Max. Reverse Leakage Current (1)
0.5
mA
T
J
= 25 C
30
mA
T
J
= 125 C
C
T
Max. Junction Capacitance
230
pF
V
R
= 5V
DC
(test signal range 100KHz to 1Mhz) 25C
L
S
Typical Series Inductance
3.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s (Rated V
R
)
Part number
30BQ040
V
R
Max. DC Reverse Voltage (V)
40
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
I
F(AV)
Max. Average Forward Current
3.0
A
50% duty cycle @ T
L
= 118 C, rectangular wave form
4.0
50% duty cycle @ T
L
= 110 C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive
2000
A
5s Sine or 3s Rect. pulse
Surge Current
110
10ms Sine or 6ms Rect. pulse
E
AS
Non Repetitive Avalanche Energy
6.0
mJ
T
J
= 25 C, I
AS
= 1.0A, L = 12mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Parameters
30BQ Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM
applied
T
J
= 25 C
Electrical Specifications
(1) Pulse Width < 300s, Duty Cycle < 2%
V
R
= rated V
R
T
J
= 125 C
Thermal-Mechanical Specifications
T
J
Max. Junction Temperature Range (*) - 55 to 150
C
T
stg
Max. Storage Temperature Range
- 55 to 150
C
R
thJL
Max. Thermal Resistance
12
C/W DC operation
Junction to Lead
(**)
R
thJA
Max. Thermal Resistance
46
C/W DC operation
Junction to Ambient
wt
Approximate Weight
0.24 (0.008) g (oz.)
Case Style
SMC
Similar to DO-214AB
Device Marking
IR3F
Parameters
30BQ
Units
Conditions
(**) Mounted 1 inch square PCB
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
30BQ040
Bulletin PD-2.439 rev. G 07/04
3
www.irf.com
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
Fig. 1 - Max. Forward Voltage Drop
Characteristics (Per Leg)
Instantaneous Forward Current - I
F
(A)
Forward Voltage Drop - V
FM
(V)
Reverse Current - I
R
(A)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(p F)
Thermal Impedance Z
thJC
(C/W)
t
1
, Rectangular Pulse Duration (Seconds)
0.1
1
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
T = 150C
T = 125C
T = 25C
J
J
J
10
100
1000
0
5 10 15 20 25 30 35 40 45
T = 25C
J
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Single Pulse
(Thermal Resistance)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC+Tc
2
t
1
t
P
DM
1
10
100
1000
10000
100000
0
10
20
30
40
25C
50C
75C
100C
125C
T = 150C
J
30BQ040
Bulletin PD-2.439 rev. G 07/04
4
www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
Average Forward Current - I
F(AV)
(A)
Allowable Lead Temperature (C)
Average Forward Current - I
F(AV)
(A)
Average Power Loss (Watts)
Square Wave Pulse Duration - T
p
(Microsec)
Non-Repetitive Surge Current - I
FSM
(A)
10
100
1000
10000
10
100
1000
10000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
70
80
90
100
110
120
130
140
150
160
0
1
2
3
4
5
DC
D=0.20
D=0.25
D=0.33
D=0.50
D=0.75
Square wave (D = 0.50)
80% Rated Vr applied
see note (2)
0
0.5
1
1.5
2
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
DC
RMS Limit
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
30BQ040
Bulletin PD-2.439 rev. G 07/04
5
www.irf.com
Dimensions in millimeters and (inches)
Outline SMC
For recommended footprint and soldering techniques refer to application note #AN-994
Outline Table
Marking & Identification
IR LOGO
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
2nd digit of the YEAR
WEEK
SITE ID
IR3F
CURRENT
VOLTAGE
YYWWX
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
5.59 (.220)
6.22 (.245)
6.60 (.260)
7.11 (.280)
2.75 (.108)
3.15 (.124)
.152 (.006)
.305 (.012)
2.00 (.079)
2.62 (.103)
0.76 (.030)
1.52 (.060)
.102 (.004)
.203 (.008)
7.75 (.305)
8.13 (.320)
Device Marking: IR3F
CATHODE
ANODE
1
2
1
2
POLARITY
PART NUMBER